Random-Site Cation Ordering and Dielectric Properties of PbMg1/3Nb2/3o3-PbSc1/2Nb1/2o3
Authors:
I. P. Raevski,
S. A. Prosandeev,
S. M. Emelyanov,
F. I. Savenko,
I. N. Zakharchenko,
O. A. Bunina,
A. S. Bogatin,
S. I. Raevskaya,
E. S. Gagarina,
E. V. Sahkar,
L. Jastrabik
Abstract:
(1-x)PbMg1/3Nb2/3O3-(x)PbSc1/2Nb1/2O3 (PMN-PSN) solid solution crystals have been grown by the flux method in the whole concentration range. X-ray supercell reflections due to B-cation ordering were observed for as-grown crystals from the 0.1 < x < 0.65 compositional range. Though the ordered domains are rather large (~50 nm) the relaxor-like dielectric behavior is observed for compositions with…
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(1-x)PbMg1/3Nb2/3O3-(x)PbSc1/2Nb1/2O3 (PMN-PSN) solid solution crystals have been grown by the flux method in the whole concentration range. X-ray supercell reflections due to B-cation ordering were observed for as-grown crystals from the 0.1 < x < 0.65 compositional range. Though the ordered domains are rather large (~50 nm) the relaxor-like dielectric behavior is observed for compositions with x < 0.6. The diffusion of the dielectric permittivity maximum in as-grown crystals is the lowest at x = 0.6 and increases towards the end members of solid solution. Such behavior is explained within a Bragg-Williams approach by employing the random layer model. At x ~ 0.6 the excitation energy determined from the Vogel-Fulcher relation exhibits a jump which we regard to changing the kind of the polar regions from PbMg1/3Nb2/3O3 to PbSc1/2Nb1/2O3 related type.
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Submitted 25 February, 2003;
originally announced February 2003.
High Dielectric Permittivity in AFe$_{1 / 2}$B$_{1 / 2}$O$_{3}$ Nonferroelectric Perovskite Ceramics (A - Ba, Sr, Ca; B - Nb, Ta, Sb)
Authors:
I. P. Raevski,
S. A. Prosandeev,
A. S. Bogatin,
M. A. Malitskaya
Abstract:
AFe$_{1 / 2}$B$_{1 / 2}$O$_{3}$(A- Ba, Sr, Ca; B-Nb, Ta, Sb) ceramics were synthesized and temperature dependencies of the dielectric permittivity were measured at different frequencies. The experimental data obtained show very high values of the dielectric permittivity in a wide temperature interval that is inherent to so-called high-k materials. The analyses of these data establish a Maxwell-W…
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AFe$_{1 / 2}$B$_{1 / 2}$O$_{3}$(A- Ba, Sr, Ca; B-Nb, Ta, Sb) ceramics were synthesized and temperature dependencies of the dielectric permittivity were measured at different frequencies. The experimental data obtained show very high values of the dielectric permittivity in a wide temperature interval that is inherent to so-called high-k materials. The analyses of these data establish a Maxwell-Wagner mechanism as a main source for the phenomenon observed.
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Submitted 31 August, 2002;
originally announced September 2002.