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Showing 1–7 of 7 results for author: Boćkowski, M

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  1. arXiv:2503.21382  [pdf, other

    cond-mat.mtrl-sci physics.comp-ph

    Limited Diffusion of Silicon in GaN: A DFT Study Supported by Experimental Evidence

    Authors: Karol Kawka, Pawel Kempisty, Akira Kusaba, Krzysztof Golyga, Karol Pozyczka, Michal Fijalkowski, Michal Bockowski

    Abstract: Silicon (Si) is the primary donor dopant in gallium nitride (GaN), introduced through epitaxial growth or ion implantation. However, precise control over Si diffusion remains a critical challenge for high-performance device applications. This study investigates Si diffusion mechanisms in bulk GaN using first-principles density functional theory (DFT) calculations, supported by ultra-high-pressure… ▽ More

    Submitted 27 March, 2025; originally announced March 2025.

  2. arXiv:2402.06140  [pdf, other

    cond-mat.mtrl-sci

    Augmentation of the Electron Counting Rule with Ising Model

    Authors: Karol Kawka, Pawel Kempisty, Konrad Sakowski, Stanislaw Krukowski, Michal Bockowski, David Bowler, Akira Kusaba

    Abstract: On semiconductor growth surfaces, surface reconstructions appear. Estimation of the reconstructed structures is essential for understanding and controlling growth phenomena. In this study, the stability of a mixture of two different surface reconstructions is investigated. Since the number of candidate structures is enormous, the structures sampled by Bayesian optimization are analyzed. As a resul… ▽ More

    Submitted 8 February, 2024; originally announced February 2024.

    Comments: 6 pages, 5 figures

    Journal ref: J. Appl. Phys. 135, 225302 (2024)

  3. arXiv:2310.13323  [pdf

    cond-mat.mtrl-sci

    Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: influence on indirect exciton diffusion

    Authors: Benjamin Damilano, Rémi Aristégui, Henryk Teisseyre, Stéphane Vézian, Vincent Guigoz, Aimeric Courville, Ileana Florea, Philippe Vennéguès, Michal Bockowski, Thierry Guillet, Maria Vladimirova

    Abstract: GaN/AlxGa1-xN quantum wells were grown by molecular beam epitaxy on high quality bulk (0001) GaN substrates. The quantum well thickness was set in the 6-8 nm range to favor the photoluminescence emission of indirect excitons. Indeed, such excitons are known to be spatially indirect, due to the presence of the internal electric field which spatially separates the electron and hole wave functions. T… ▽ More

    Submitted 20 October, 2023; originally announced October 2023.

    Comments: 22 pages, 10 figures, 2 tables

  4. arXiv:2206.13300  [pdf

    cond-mat.mtrl-sci cond-mat.other

    Pressure-driven relaxation processes in nanocomposite ionic glass LiFe$_{0.75}$V$_{0.10}$PO$_{4}$

    Authors: Szymon Starzonek, Sylwester J. Rzoska, Aleksandra Drozd-Rzoska, Michal Bockowski, Tomasz K. Pietrzak, Jerzy E. Garbarczyk

    Abstract: This paper presents results for systems formed in a solid glassy state after nanocrystallization process above the glass temperature. We analyze electric conductivity and relaxation processes after such treatment under high temperature (HT) and high pressure (HP-HT) as well. The latter leads to ca. 8% increase of density, two decades (100) increase of electric conductivity as well as qualitative c… ▽ More

    Submitted 27 June, 2022; originally announced June 2022.

  5. arXiv:2204.10225  [pdf

    cond-mat.mtrl-sci

    Defects Evolution and Mg Segregation in Mg-implanted GaN with Ultra-High-Pressure Annealing

    Authors: Y. Wang, K. Huynh, M. E. Liao, J. Tweedie, P. Reddy, M. H. Breckenridge, R. Collazo, Z. Sitar, M. Bockowski, X. Huang, M. Wojcik, M. S. Goorsky

    Abstract: Annealing Mg-implanted homoepitaxial GaN at temperatures at or above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Extended defects in the form of inversion domains contain electrically inactive Mg after post-implantation annealing at temperatures as high as 1300 °C (one GPa N2 overpressure), which results in a low dopant activation effic… ▽ More

    Submitted 21 April, 2022; originally announced April 2022.

  6. arXiv:2001.07458  [pdf

    cond-mat.mtrl-sci

    Diffusion of Be in gallium nitride: Experiment and modelling

    Authors: Rafał Jakieła, Kacper Sierakowski, Tomasz Sochacki, Małgorzata Iwińska, Michał Fijalkowski, Adam Barcz, Michał Boćkowski

    Abstract: Diffusion mechanism of beryllium in gallium nitride was investigated by analyzing temperature-dependent diffusion profiles from an infinite source. Beryllium atoms were implanted into a high structural quality gallium nitride layer crystallized by halide vapor phase epitaxy on an ammonothermal gallium nitride substrate. Post-implantation annealing was performed at different temperatures, between 1… ▽ More

    Submitted 21 January, 2020; originally announced January 2020.

    Comments: 16 pages, 6 figures, 1 table, 4 equations

  7. Heat capacity of $α$-GaN: Isotope Effects

    Authors: R. K. Kremer, M. Cardona, E. Schmitt, J. Blumm, S. K. Estreicher, M. Sanati, M. Bockowski, I. Grzegory, T. Suski, A. Jezowski

    Abstract: Until recently, the heat capacity of GaN had only been measured for polycrystalline powder samples. Semiempirical as well as \textit{first-principles} calculations have appeared within the past few years. We present in this article measurements of the heat capacity of hexagonal single crystals of GaN in the 20-1400K temperature range. We find that our data deviate significantly from the literatu… ▽ More

    Submitted 21 March, 2005; originally announced March 2005.

    Comments: 12 pages, 5 Figures, submitted to PRB