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Limited Diffusion of Silicon in GaN: A DFT Study Supported by Experimental Evidence
Authors:
Karol Kawka,
Pawel Kempisty,
Akira Kusaba,
Krzysztof Golyga,
Karol Pozyczka,
Michal Fijalkowski,
Michal Bockowski
Abstract:
Silicon (Si) is the primary donor dopant in gallium nitride (GaN), introduced through epitaxial growth or ion implantation. However, precise control over Si diffusion remains a critical challenge for high-performance device applications. This study investigates Si diffusion mechanisms in bulk GaN using first-principles density functional theory (DFT) calculations, supported by ultra-high-pressure…
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Silicon (Si) is the primary donor dopant in gallium nitride (GaN), introduced through epitaxial growth or ion implantation. However, precise control over Si diffusion remains a critical challenge for high-performance device applications. This study investigates Si diffusion mechanisms in bulk GaN using first-principles density functional theory (DFT) calculations, supported by ultra-high-pressure annealing (UHPA) experiments. Vacancy-mediated diffusion pathways were analyzed using the SIESTA code, with minimum energy paths (MEPs) and activation barriers determined via the nudged elastic band (NEB) method. The results indicate that Si diffusion barriers vary with crystallographic direction, with the lowest barrier of 3.2 eV along [11-20] and the highest barrier of ~9.9 eV along [1-100], rendering diffusion in this direction highly improbable. Alternative diffusion mechanisms, including direct exchange and ring-like migration, exhibit prohibitively high barriers ($>$12 eV). Phonon calculations confirm that temperature-induced reductions in effective diffusion barriers are minimal. Experimental validation using SIMS analysis on Si-implanted GaN samples subjected to UHPA (1450°C, 1 GPa) confirms negligible Si diffusion under these extreme conditions. These findings resolve inconsistencies in prior reports and establish that Si-doped GaN remains highly stable, ensuring reliable doping profiles for advanced electronic and optoelectronic applications.
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Submitted 27 March, 2025;
originally announced March 2025.
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Augmentation of the Electron Counting Rule with Ising Model
Authors:
Karol Kawka,
Pawel Kempisty,
Konrad Sakowski,
Stanislaw Krukowski,
Michal Bockowski,
David Bowler,
Akira Kusaba
Abstract:
On semiconductor growth surfaces, surface reconstructions appear. Estimation of the reconstructed structures is essential for understanding and controlling growth phenomena. In this study, the stability of a mixture of two different surface reconstructions is investigated. Since the number of candidate structures is enormous, the structures sampled by Bayesian optimization are analyzed. As a resul…
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On semiconductor growth surfaces, surface reconstructions appear. Estimation of the reconstructed structures is essential for understanding and controlling growth phenomena. In this study, the stability of a mixture of two different surface reconstructions is investigated. Since the number of candidate structures is enormous, the structures sampled by Bayesian optimization are analyzed. As a result, the local electron counting (EC) rule alone was found to be insufficient to explain such stability. Then, augmenting the EC rule, a data-driven Ising model is proposed. The model allows the evaluation of the whole enormous number of candidate structures. The approach is expected to be useful for theoretical studies of such mixtures on various semiconductor surfaces.
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Submitted 8 February, 2024;
originally announced February 2024.
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Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: influence on indirect exciton diffusion
Authors:
Benjamin Damilano,
Rémi Aristégui,
Henryk Teisseyre,
Stéphane Vézian,
Vincent Guigoz,
Aimeric Courville,
Ileana Florea,
Philippe Vennéguès,
Michal Bockowski,
Thierry Guillet,
Maria Vladimirova
Abstract:
GaN/AlxGa1-xN quantum wells were grown by molecular beam epitaxy on high quality bulk (0001) GaN substrates. The quantum well thickness was set in the 6-8 nm range to favor the photoluminescence emission of indirect excitons. Indeed, such excitons are known to be spatially indirect, due to the presence of the internal electric field which spatially separates the electron and hole wave functions. T…
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GaN/AlxGa1-xN quantum wells were grown by molecular beam epitaxy on high quality bulk (0001) GaN substrates. The quantum well thickness was set in the 6-8 nm range to favor the photoluminescence emission of indirect excitons. Indeed, such excitons are known to be spatially indirect, due to the presence of the internal electric field which spatially separates the electron and hole wave functions. The growth conditions were optimized in view of minimizing the photoluminescence peak broadening. In particular, the impact of growth temperature (up to 900°C) on the surface morphology, structural and photoluminescence properties was studied. The diffusion of indirect excitons on the scale of tens of microns was measured with a micro-photoluminescence setup equipped with a spatially resolved detection. A dedicated model and its analysis allow us to extract from these measurements the exciton diffusion constant and to conclude on the optimum growth conditions for the GaN/AlxGa1-xN quantum well structures suited for studies of quantum collective effects in indirect exciton liquids.
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Submitted 20 October, 2023;
originally announced October 2023.
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Pressure-driven relaxation processes in nanocomposite ionic glass LiFe$_{0.75}$V$_{0.10}$PO$_{4}$
Authors:
Szymon Starzonek,
Sylwester J. Rzoska,
Aleksandra Drozd-Rzoska,
Michal Bockowski,
Tomasz K. Pietrzak,
Jerzy E. Garbarczyk
Abstract:
This paper presents results for systems formed in a solid glassy state after nanocrystallization process above the glass temperature. We analyze electric conductivity and relaxation processes after such treatment under high temperature (HT) and high pressure (HP-HT) as well. The latter leads to ca. 8% increase of density, two decades (100) increase of electric conductivity as well as qualitative c…
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This paper presents results for systems formed in a solid glassy state after nanocrystallization process above the glass temperature. We analyze electric conductivity and relaxation processes after such treatment under high temperature (HT) and high pressure (HP-HT) as well. The latter leads to ca. 8% increase of density, two decades (100) increase of electric conductivity as well as qualitative changes in relaxation processes. The previtreous-type changes of the relaxation time on cooling is analyzed by the use of critical-like and the 'critical-activated' description. Presented results correspond well with obtained for this material and shown in ref. [8]. The evidence for pressure evolution of the glass and crystallization temperatures, indicating the unique possibility of maxima and crossovers is also reported.
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Submitted 27 June, 2022;
originally announced June 2022.
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Defects Evolution and Mg Segregation in Mg-implanted GaN with Ultra-High-Pressure Annealing
Authors:
Y. Wang,
K. Huynh,
M. E. Liao,
J. Tweedie,
P. Reddy,
M. H. Breckenridge,
R. Collazo,
Z. Sitar,
M. Bockowski,
X. Huang,
M. Wojcik,
M. S. Goorsky
Abstract:
Annealing Mg-implanted homoepitaxial GaN at temperatures at or above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Extended defects in the form of inversion domains contain electrically inactive Mg after post-implantation annealing at temperatures as high as 1300 °C (one GPa N2 overpressure), which results in a low dopant activation effic…
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Annealing Mg-implanted homoepitaxial GaN at temperatures at or above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Extended defects in the form of inversion domains contain electrically inactive Mg after post-implantation annealing at temperatures as high as 1300 °C (one GPa N2 overpressure), which results in a low dopant activation efficiency. Triple axis X-ray data show that the implant-induced strain is fully relieved after annealing at 1300 °C for 10 min, indicating that the strain-inducing point defects formed during implantation have reconfigured. However, annealing at temperatures of 1400 °C to 1500 °C (also one GPa N2 overpressure) eliminates the presence of the inversion domains. Annealing at these higher temperatures and for a longer time does not have any further impact on the strain state. While residual defects, such as dislocation loops, still exist after annealing at and above 1400 °C, chemical analysis at the dislocation loops shows no sign of Mg segregation. Meanwhile, an overall decreasing trend in the dislocation loop size and density is observed after annealing at higher temperatures and longer times. Earlier work [1] addressing electrical measurements of these types of samples showed that annealing at 1400 °C leads to a dopant activation efficiency that is an order of magnitude higher than that observed at 1300 °C. This work complements the earlier work by identifying the microscopic defects (inversion domains) which incorporate Mg, and points to the benefits, in terms of defect density and p-type dopant activation, of using higher temperatures annealing cycles to activate Mg in GaN.
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Submitted 21 April, 2022;
originally announced April 2022.
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Diffusion of Be in gallium nitride: Experiment and modelling
Authors:
Rafał Jakieła,
Kacper Sierakowski,
Tomasz Sochacki,
Małgorzata Iwińska,
Michał Fijalkowski,
Adam Barcz,
Michał Boćkowski
Abstract:
Diffusion mechanism of beryllium in gallium nitride was investigated by analyzing temperature-dependent diffusion profiles from an infinite source. Beryllium atoms were implanted into a high structural quality gallium nitride layer crystallized by halide vapor phase epitaxy on an ammonothermal gallium nitride substrate. Post-implantation annealing was performed at different temperatures, between 1…
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Diffusion mechanism of beryllium in gallium nitride was investigated by analyzing temperature-dependent diffusion profiles from an infinite source. Beryllium atoms were implanted into a high structural quality gallium nitride layer crystallized by halide vapor phase epitaxy on an ammonothermal gallium nitride substrate. Post-implantation annealing was performed at different temperatures, between 1000°C and 1400°C, under high nitrogen pressure. Beryllium profiles were analyzed in the as-implanted and annealed samples by secondary ion mass spectrometry. It was shown that the diffusion of the dopant results from the combination of two mechanisms: rapid interstitial and slow interstitial-substitutional diffusion. The pre-exponential factor as well as activation energy for both diffusion paths were determined. Moreover, from the characteristic features of beryllium depth profiles, the formation energies of gallium vacancy and beryllium in interstitial position were calculated and compared to the theoretical values.
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Submitted 21 January, 2020;
originally announced January 2020.
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Heat capacity of $α$-GaN: Isotope Effects
Authors:
R. K. Kremer,
M. Cardona,
E. Schmitt,
J. Blumm,
S. K. Estreicher,
M. Sanati,
M. Bockowski,
I. Grzegory,
T. Suski,
A. Jezowski
Abstract:
Until recently, the heat capacity of GaN had only been measured for polycrystalline powder samples. Semiempirical as well as \textit{first-principles} calculations have appeared within the past few years. We present in this article measurements of the heat capacity of hexagonal single crystals of GaN in the 20-1400K temperature range. We find that our data deviate significantly from the literatu…
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Until recently, the heat capacity of GaN had only been measured for polycrystalline powder samples. Semiempirical as well as \textit{first-principles} calculations have appeared within the past few years. We present in this article measurements of the heat capacity of hexagonal single crystals of GaN in the 20-1400K temperature range. We find that our data deviate significantly from the literature values for polycrystalline materials. The dependence of the heat capacity on the isotopic mass has also been investigated recently for monatomic crystals such as diamond, silicon, and germanium. Multi-atomic crystals are expected to exhibit a different dependence of these heat capacities on the masses of each of the isotopes present. These effects have not been investigated in the past. We also present \textit{first-principles} calculations of the dependence of the heat capacities of GaN, as a canonical binary material, on each of the Ga and N masses. We show that they are indeed different, as expected from the fact that the Ga mass affects mainly the acoustic, that of N the optic phonons. It is hoped that these calculations will encourage experimental measurements of the dependence of the heat capacity on isotopic masses in binary and more complex semiconductors.
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Submitted 21 March, 2005;
originally announced March 2005.
