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Gain and Threshold Improvements of 1300 nm Lasers based on InGaAs/InAlGaAs Superlattice Active Regions
Authors:
Andrey Babichev,
Evgeniy Pirogov,
Maksim Sobolev,
Sergey Blokhin,
Yuri Shernyakov,
Mikhail Maximov,
Andrey Lutetskiy,
Nikita Pikhtin,
Leonid Karachinsky,
Innokenty Novikov,
Anton Egorov,
Si-Cong Tian,
Dieter Bimberg
Abstract:
A detailed experimental analysis of the impact of active region design on the performance of 1300 nm lasers based on InGaAs/InAlGaAs superlattices is presented. Three different types of superlattice active regions and waveguide layer compositions were grown. Using a superlattice allows to downshift the energy position of the miniband, as compared to thin InGaAs quantum wells, having the same compo…
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A detailed experimental analysis of the impact of active region design on the performance of 1300 nm lasers based on InGaAs/InAlGaAs superlattices is presented. Three different types of superlattice active regions and waveguide layer compositions were grown. Using a superlattice allows to downshift the energy position of the miniband, as compared to thin InGaAs quantum wells, having the same composition, being beneficial for high-temperature operation. Very low internal loss (~6$cm^{-1}$), low transparency current density of ~500$ A/cm^2$, together with 46$ cm^{-1}$ modal gain and 53 % internal efficiency were observed for broad-area lasers with an active region based on a highly strained $In_{0.74}Ga_{0.26}As/In_{0.53}Al_{0.25}Ga_{0.22}As$ superlattice. Characteristic temperatures $T_0$ and $T_1$ were improved up to 76 K and 100 K, respectively. These data suggest that such superlattices have also the potential to much improve VCSEL properties at this wavelength.
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Submitted 5 August, 2024;
originally announced August 2024.
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On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP(001)
Authors:
Petr Steindl,
Elisa Maddalena Sala,
Benito Alén,
Dieter Bimberg,
Petr Klenovský
Abstract:
Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by means of non-resonant energy and temperature modulated time-resolved photoluminescence. Studying this material system is important in view of the ongoing implem…
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Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by means of non-resonant energy and temperature modulated time-resolved photoluminescence. Studying this material system is important in view of the ongoing implementation of such QDs for nano memory devices. Our set of structures contains a single QD layer, QDs overgrown by a GaSb capping layer, and solely a GaAs quantum well, respectively. Theoretical analytical models allow us to discern the common spectral features around the emission energy of 1.8 eV related to GaAs quantum well and GaP substrate. We observe type-I emission from QDs with recombination times between 2 ns and 10 ns, increasing towards lower energies. The distribution suggests the coexistence of momentum direct and indirect QD transitions. Moreover, based on the considerable tunability of the dots depending on Sb incorporation, we suggest their utilization as quantum photonic sources embedded in complementary metal-oxide-semiconductor (CMOS) platforms, since GaP is almost lattice-matched to Si. Finally, our analysis confirms the nature of the pumping power blue-shift of emission originating from the charged-background induced changes of the wavefunction topology.
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Submitted 15 January, 2021;
originally announced January 2021.
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Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix
Authors:
Petr Steindl,
Elisa Maddalena Sala,
Benito Alén,
David Fuertes Marrón,
Dieter Bimberg,
Petr Klenovský
Abstract:
The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001) substrates is studied by means of excitation and temperature-dependent photoluminescence (PL), and it is related to their complex electronic structure. Such QDs exhibit concurrently direct and indirect transitions, which allows the swapping of $Γ$ and $L$ quantum confined states in energy, depending on details of their…
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The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001) substrates is studied by means of excitation and temperature-dependent photoluminescence (PL), and it is related to their complex electronic structure. Such QDs exhibit concurrently direct and indirect transitions, which allows the swapping of $Γ$ and $L$ quantum confined states in energy, depending on details of their stoichiometry. Based on realistic data on QD structure and composition, derived from high-resolution transmission electron microscopy (HRTEM) measurements, simulations by means of $\mathbf{k\cdot p}$ theory are performed. The theoretical prediction of both momentum direct and indirect type-I optical transitions are confirmed by the experiments presented here. Additional investigations by a combination of Raman and photoreflectance spectroscopy show modifications of the hydrostatic strain in the QD layer, depending on the sequential addition of QDs and capping layer. A variation of the excitation density across four orders of magnitude reveals a 50 meV energy blueshift of the QD emission. Our findings suggest that the assignment of the type of transition, based solely by the observation of a blueshift with increased pumping, is insufficient. We propose therefore a more consistent approach based on the analysis of the character of the blueshift evolution with optical pumping, which employs a numerical model based on a semi-self-consistent configuration interaction method.
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Submitted 10 September, 2019; v1 submitted 24 June, 2019;
originally announced June 2019.
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Electronic states of (InGa)(AsSb)/GaAs/GaP quantum dots
Authors:
Petr Klenovský,
Andrei Schliwa,
Dieter Bimberg
Abstract:
Detailed theoretical studies of the electronic structure of (InGa)(AsSb)/GaAs/GaP quantum dots are presented. This system is unique since it exhibits concurrently direct and indirect transitions both in real and momentum space and is attractive for applications in quantum information technology, showing advantages as compared to the widely studied (In,Ga)As/GaAs dots. We proceed from the inspectio…
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Detailed theoretical studies of the electronic structure of (InGa)(AsSb)/GaAs/GaP quantum dots are presented. This system is unique since it exhibits concurrently direct and indirect transitions both in real and momentum space and is attractive for applications in quantum information technology, showing advantages as compared to the widely studied (In,Ga)As/GaAs dots. We proceed from the inspection of the confinement potentials for ${\bf k}\neq 0$ and ${\bf k}= 0$ conduction and ${\bf k}= 0$ valence bands, through the formulation of ${\bf k}\cdot{\bf p}$ calculations for ${\bf k}$-indirect transitions, up to the excitonic structure of $Γ$-transitions. Throughout this process we compare the results obtained for dots on both GaP and GaAs substrates enabling us to make a direct comparison to the (In,Ga)As/GaAs quantum dot system. We also discuss the realization of quantum gates.
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Submitted 11 September, 2019; v1 submitted 21 March, 2019;
originally announced March 2019.
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Experimental Optimum Maximum-Confidence Discrimination and Optimum Unambiguous Discrimination of Two Mixed Single-Photon States
Authors:
Gesine A. Steudle,
Sebastian Knauer,
Ulrike Herzog,
Erik Stock,
Vladimir A. Haisler,
Dieter Bimberg,
Oliver Benson
Abstract:
We present an experimental implementation of optimum measurements for quantum state discrimination. Optimum maximum-confidence discrimination and optimum unambiguous discrimination of two mixed single-photon polarization states were performed. For the latter the states of rank two in a four-dimensional Hilbert space are prepared using both path and polarization encoding. Linear optics and single p…
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We present an experimental implementation of optimum measurements for quantum state discrimination. Optimum maximum-confidence discrimination and optimum unambiguous discrimination of two mixed single-photon polarization states were performed. For the latter the states of rank two in a four-dimensional Hilbert space are prepared using both path and polarization encoding. Linear optics and single photons from a true single-photon source based on a semiconductor quantum dot are utilized.
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Submitted 17 May, 2011;
originally announced May 2011.
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Finite Element Simulation of the Optical Modes of Semiconductor Lasers
Authors:
J. Pomplun,
S. Burger,
F. Schmidt,
A. Schliwa,
D. Bimberg,
A. Pietrzak,
H. Wenzel,
G. Erbert
Abstract:
In the present article we investigate optical near fields in semiconductor lasers. We perform finite element simulations for two different laser types, namely a super large optical waveguide (SLOW) laser, which is an edge emitter, and a vertical cavity surface emitting laser (VCSEL). We give the mathematical formulation of the different eigenvalue problems that arise for our examples and explain t…
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In the present article we investigate optical near fields in semiconductor lasers. We perform finite element simulations for two different laser types, namely a super large optical waveguide (SLOW) laser, which is an edge emitter, and a vertical cavity surface emitting laser (VCSEL). We give the mathematical formulation of the different eigenvalue problems that arise for our examples and explain their numerical solution with the finite element method. Thereby, we also comment on the usage of transparent boundary conditions, which have to be applied to respect the exterior environment, e.g., the very large substrate and surrounding air.
For the SLOW laser we compare the computed near fields to experimental data for different design parameters of the device. For the VCSEL example a comparison to simplified 1D mode calculations is carried out.
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Submitted 29 November, 2010;
originally announced November 2010.
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Optical imaging of resonant electrical carrier injection into individual quantum dots
Authors:
A. Baumgartner,
E. Stock,
A. Patanè,
L. Eaves,
M. Henini,
D. Bimberg
Abstract:
We image the micro-electroluminescence (EL) spectra of self-assembled InAs quantum dots (QDs) embedded in the intrinsic region of a GaAs p-i-n diode and demonstrate optical detection of resonant carrier injection into a single QD. Resonant tunneling of electrons and holes into the QDs at bias voltages below the flat-band condition leads to sharp EL lines characteristic of individual QDs, accompani…
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We image the micro-electroluminescence (EL) spectra of self-assembled InAs quantum dots (QDs) embedded in the intrinsic region of a GaAs p-i-n diode and demonstrate optical detection of resonant carrier injection into a single QD. Resonant tunneling of electrons and holes into the QDs at bias voltages below the flat-band condition leads to sharp EL lines characteristic of individual QDs, accompanied by a spatial fragmentation of the surface EL emission into small and discrete light- emitting areas, each with its own spectral fingerprint and Stark shift. We explain this behavior in terms of Coulomb interaction effects and the selective excitation of a small number of QDs within the ensemble due to preferential resonant tunneling paths for carriers.
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Submitted 16 July, 2010;
originally announced July 2010.
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Origin of the Broad Lifetime Distribution of Localized Excitons in InGaN/GaN Quantum Dots
Authors:
M. Winkelnkemper,
M. Dworzak,
T. P. Bartel,
A. Strittmatter,
A. Hoffmann,
D. Bimberg
Abstract:
We derive an energy-dependent decay-time distribution function from the multi-exponential decay of the ensemble photoluminescence (PL) of InGaN/GaN quantum dots (QDs), which agrees well with recently published single-QD time-resolved PL measurements. Using eight-band k.p modelling, we show that the built-in piezo- and pyroelectric fields within the QDs cause a sensitive dependence of the radiati…
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We derive an energy-dependent decay-time distribution function from the multi-exponential decay of the ensemble photoluminescence (PL) of InGaN/GaN quantum dots (QDs), which agrees well with recently published single-QD time-resolved PL measurements. Using eight-band k.p modelling, we show that the built-in piezo- and pyroelectric fields within the QDs cause a sensitive dependence of the radiative lifetimes on the exact QD geometry and composition. Moreover, the radiative lifetimes also depend heavily on the composition of the direct surrounding of the QDs. A broad lifetime distribution occurs even for moderate variations of the QD structure. Thus, for unscreened fields a multi-exponential decay of the ensemble PL is generally expected in this material system.
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Submitted 31 July, 2008;
originally announced July 2008.
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GaN/AlN Quantum Dots for Single Qubit Emitters
Authors:
M. Winkelnkemper,
R. Seguin,
S. Rodt,
A. Hoffmann,
D. Bimberg
Abstract:
We study theoretically the electronic properties of $c$-plane GaN/AlN quantum dots (QDs) with focus on their potential as sources of single polarized photons for future quantum communication systems. Within the framework of eight-band k.p theory we calculate the optical interband transitions of the QDs and their polarization properties. We show that an anisotropy of the QD confinement potential…
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We study theoretically the electronic properties of $c$-plane GaN/AlN quantum dots (QDs) with focus on their potential as sources of single polarized photons for future quantum communication systems. Within the framework of eight-band k.p theory we calculate the optical interband transitions of the QDs and their polarization properties. We show that an anisotropy of the QD confinement potential in the basal plane (e.g. QD elongation or strain anisotropy) leads to a pronounced linear polarization of the ground state and excited state transitions. An externally applied uniaxial stress can be used to either induce a linear polarization of the ground-state transition for emission of single polarized photons or even to compensate the polarization induced by the structural elongation.
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Submitted 22 September, 2008; v1 submitted 31 July, 2008;
originally announced July 2008.
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Decay dynamics of neutral and charged excitonic complexes in single InAs/GaAs quantum dots
Authors:
M. Feucker,
R. Seguin,
S. Rodt,
A. Hoffmann,
D. Bimberg
Abstract:
Systematic time-resolved measurements on neutral and charged excitonic complexes (X, XX, X+, and XX+) of 26 different single InAs/GaAs quantum dots are reported. The ratios of the decay times are discussed in terms of the number of transition channels determined by the excitonic fine structure and a specific transition time for each channel. The measured ratio for the neutral complexes is 1.7 de…
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Systematic time-resolved measurements on neutral and charged excitonic complexes (X, XX, X+, and XX+) of 26 different single InAs/GaAs quantum dots are reported. The ratios of the decay times are discussed in terms of the number of transition channels determined by the excitonic fine structure and a specific transition time for each channel. The measured ratio for the neutral complexes is 1.7 deviating from the theoretically predicted value of 2. A ratio of 1.5 for the positively charged exciton and biexciton decay time is predicted and exactly matched by the measured ratio indicating identical specific transition times for the transition channels involved.
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Submitted 7 February, 2008;
originally announced February 2008.
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Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
Authors:
Patrick Rinke,
Momme Winkelnkemper,
Abdallah Qteish,
Dieter Bimberg,
Jorg Neugebauer,
Matthias Scheffler
Abstract:
We have derived consistent sets of band parameters (band gaps, crystal field-splittings, band gap deformation potentials, effective masses, Luttinger and EP parameters) for AlN, GaN, and InN in the zinc-blende and wurtzite phases employing many-body perturbation theory in the G0W0 approximation. The G0W0 method has been combined with density-functional theory (DFT) calculations in the exact-exch…
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We have derived consistent sets of band parameters (band gaps, crystal field-splittings, band gap deformation potentials, effective masses, Luttinger and EP parameters) for AlN, GaN, and InN in the zinc-blende and wurtzite phases employing many-body perturbation theory in the G0W0 approximation. The G0W0 method has been combined with density-functional theory (DFT) calculations in the exact-exchange optimized effective potential approach (OEPx) to overcome the limitations of local-density or gradient-corrected DFT functionals (LDA and GGA). The band structures in the vicinity of the Gamma-point have been used to directly parameterize a 4x4 k.p Hamiltonian to capture non-parabolicities in the conduction bands and the more complex valence-band structure of the wurtzite phases. We demonstrate that the band parameters derived in this fashion are in very good agreement with the available experimental data and provide reliable predictions for all parameters which have not been determined experimentally so far.
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Submitted 2 January, 2008;
originally announced January 2008.
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Polarized Emission Lines from Single InGaN/GaN Quantum Dots: Role of the Valence-band Structure of Wurtzite Group-III Nitrides
Authors:
M. Winkelnkemper,
R. Seguin,
S. Rodt,
A. Schliwa,
L. Reissmann,
A. Strittmatter,
A. Hoffmann,
D. Bimberg
Abstract:
We present a study of the polarization properties of emission lines from single InGaN/GaN quantum dots (QDs). The QDs, formed by spinodal decomposition within ultra-thin InGaN quantum wells, are investigated using single-QD cathodoluminescence (CL). The emission lines exhibit a systematic linear polarization in the orthogonal crystal directions [1 1 -2 0] and [-1 1 0 0]--a symmetry that is non-n…
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We present a study of the polarization properties of emission lines from single InGaN/GaN quantum dots (QDs). The QDs, formed by spinodal decomposition within ultra-thin InGaN quantum wells, are investigated using single-QD cathodoluminescence (CL). The emission lines exhibit a systematic linear polarization in the orthogonal crystal directions [1 1 -2 0] and [-1 1 0 0]--a symmetry that is non-native to hexagonal crystals.
Eight-band k.p calculations reveal a mechanism that can explain the observed polarizations: The character of the hole(s) in an excitonic complex determines the polarization direction of the respective emission if the QD is slightly elongated. Transitions involving A-band holes are polarized parallel to the elongation; transitions involving B-type holes are polarized in the orthogonal direction. The energetic separation of both hole states is smaller than 10 meV. The mechanism leading to the linear polarizations is not restricted to InGaN QDs, but should occur in other wurtzite-nitride QDs and in materials with similar valence band structure.
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Submitted 21 November, 2007;
originally announced November 2007.
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Excitonic Mott transition in type-II quantum dots
Authors:
Bhavtosh Bansal,
M. Hayne,
M. Geller,
D. Bimberg,
V. V. Moshchalkov
Abstract:
Photoluminescence spectra measured on a type-II GaSb/GaAs quantum dot ensemble at high excitation power indicate a Mott transition from the low density state comprising of spatially-indirect excitons to a high density electron-plasma state. Under the influence of a very high magnetic field, the electron-plasma that is formed at high excitation powers is `frozen-out' into a state of optically ina…
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Photoluminescence spectra measured on a type-II GaSb/GaAs quantum dot ensemble at high excitation power indicate a Mott transition from the low density state comprising of spatially-indirect excitons to a high density electron-plasma state. Under the influence of a very high magnetic field, the electron-plasma that is formed at high excitation powers is `frozen-out' into a state of optically inactive magneto-excitons.
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Submitted 13 June, 2007;
originally announced June 2007.
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Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots
Authors:
M. Winkelnkemper,
R. Seguin,
S. Rodt,
A. Schliwa,
L. Reissmann,
A. Strittmatter,
A. Hoffmann,
D. Bimberg
Abstract:
Cathodoluminescence measurements on single InGaN/GaN quantum dots (QDs) are reported. Complex spectra with up to five emission lines per QD are observed. The lines are polarized along the orthogonal crystal directions [1 1 -2 0] and [-1 1 0 0]. Realistic eight-band k.p electronic structure calculations show that the polarization of the lines can be explained by excitonic recombinations involving…
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Cathodoluminescence measurements on single InGaN/GaN quantum dots (QDs) are reported. Complex spectra with up to five emission lines per QD are observed. The lines are polarized along the orthogonal crystal directions [1 1 -2 0] and [-1 1 0 0]. Realistic eight-band k.p electronic structure calculations show that the polarization of the lines can be explained by excitonic recombinations involving hole states which are either formed by the A or the B valence band.
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Submitted 24 May, 2007;
originally announced May 2007.
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Control of fine-structure splitting and excitonic binding energies in selected individual InAs/GaAs quantum dots
Authors:
R. Seguin,
A. Schliwa,
T. D. Germann,
S. Rodt,
M. Winkelnkemper,
K. Pötschke,
A. Strittmatter,
U. W. Pohl,
T. Hammerschmidt,
P. Kratzer,
D. Bimberg
Abstract:
A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. Single QD cathodoluminescence spectra are recorded to trace the evolution of one and the same QD over several steps of annealing. A substantial reduction of the excitonic fine-structure splitting upon annealing is observed. In addition, the binding energies of different…
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A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. Single QD cathodoluminescence spectra are recorded to trace the evolution of one and the same QD over several steps of annealing. A substantial reduction of the excitonic fine-structure splitting upon annealing is observed. In addition, the binding energies of different excitonic complexes change dramatically. The results are compared to model calculations within eight-band k.p theory and the configuration interaction method, suggesting a change of electron and hole wave function shape and relative position.
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Submitted 2 January, 2007;
originally announced January 2007.
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Ex-situ control of fine-structure splitting and excitonic binding energies in single InAs/GaAs quantum dots
Authors:
R. Seguin,
A. Schliwa,
T. D. Germann,
S. Rodt,
K. Pötschke,
U. W. Pohl,
D. Bimberg
Abstract:
A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. We are able to record single QD cathodoluminescence spectra and trace the evolution of one and the same QD over several steps of annealing. A systematic reduction of the excitonic fine-structure splitting is reported. In addition the binding energies of different excito…
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A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. We are able to record single QD cathodoluminescence spectra and trace the evolution of one and the same QD over several steps of annealing. A systematic reduction of the excitonic fine-structure splitting is reported. In addition the binding energies of different excitonic complexes change dramatically. The results are interpreted in terms of a change of electron and hole wavefunction shape and mutual position.
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Submitted 17 October, 2006;
originally announced October 2006.
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Interrelation of structural and electronic properties of InGaN/GaN quantum dots using an eight-band k.p model
Authors:
Momme Winkelnkemper,
Andrei Schliwa,
Dieter Bimberg
Abstract:
We present an eight-band k.p model for the calculation of the electronic structure of wurtzite semiconductor quantum dots (QDs) and its application to indium gallium nitride (InGaN) QDs formed by composition fluctuations in InGaN layers. The eight-band k.p model accounts for strain effects, piezoelectric and pyroelectricity, spin-orbit and crystal field splitting. Exciton binding energies are ca…
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We present an eight-band k.p model for the calculation of the electronic structure of wurtzite semiconductor quantum dots (QDs) and its application to indium gallium nitride (InGaN) QDs formed by composition fluctuations in InGaN layers. The eight-band k.p model accounts for strain effects, piezoelectric and pyroelectricity, spin-orbit and crystal field splitting. Exciton binding energies are calculated using the self-consistent Hartree method. Using this model, we studied the electronic properties of InGaN QDs and their dependence on structural properties, i.e., their chemical composition, height, and lateral diameter. We found a dominant influence of the built-in piezoelectric and pyroelectric fields, causing a spatial separation of the bound electron and hole states and a redshift of the exciton transition energies. The single-particle energies as well as the exciton energies depend heavily on the composition and geometry of the QDs.
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Submitted 17 October, 2006;
originally announced October 2006.
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Size-dependence of anisotropic exchange interaction in InAs/GaAs quantum dots
Authors:
R. Seguin,
S. Rodt,
A. Schliwa,
K. Pötschke,
U. W. Pohl,
D. Bimberg
Abstract:
A comprehensive study of the exchange interaction between charge carriers in self-organized InAs/GaAs quantum dots is presented. Single quantum-dot cathodoluminescence spectra of quantum dots of different sizes are analyzed. Special attention is paid to the energetic structure of the charged excited exciton (hot trion). A varying degree of intermixing within the hot trion states leads to varying…
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A comprehensive study of the exchange interaction between charge carriers in self-organized InAs/GaAs quantum dots is presented. Single quantum-dot cathodoluminescence spectra of quantum dots of different sizes are analyzed. Special attention is paid to the energetic structure of the charged excited exciton (hot trion). A varying degree of intermixing within the hot trion states leads to varying degrees of polarization of the corresponding emission lines. The emission characteristics change from circularly polarized for small quantum dots to elliptically polarized for large quantum dots. The findings are explained by a change of magnitude of the anisotropic exchange interaction and compared to the related effect of fine-structure splitting in the neutral exciton and biexciton emission.
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Submitted 17 October, 2006;
originally announced October 2006.
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Size-dependent fine-structure splitting in self-organized InAs/GaAs quantum dots
Authors:
R. Seguin,
A. Schliwa,
S. Rodt,
K. Pötschke,
U. W. Pohl,
D. Bimberg
Abstract:
A systematic variation of the exciton fine-structure splitting with quantum dot size in single InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition is observed. The splitting increases from -80 to as much as 520 $μ$eV with quantum dot size. A change of sign is reported for small quantum dots. Model calculations within the framework of eight-band k.p theory and the configuratio…
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A systematic variation of the exciton fine-structure splitting with quantum dot size in single InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition is observed. The splitting increases from -80 to as much as 520 $μ$eV with quantum dot size. A change of sign is reported for small quantum dots. Model calculations within the framework of eight-band k.p theory and the configuration interaction method were performed. Different sources for the fine-structure splitting are discussed, and piezoelectricity is pinpointed as the only effect reproducing the observed trend.
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Submitted 16 October, 2006;
originally announced October 2006.
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Multi-excitonic complexes in single InGaN quantum dots
Authors:
R. Seguin,
S. Rodt,
A. Strittmatter,
L. Reißmann,
T. Bartel,
A. Hoffmann,
D. Bimberg
Abstract:
Cathodoluminescence spectra employing a shadow mask technique of InGaN layers grown by metal organic chemical vapor deposition on Si(111) substrates are reported. Sharp lines originating from InGaN quantum dots are observed. Temperature dependent measurements reveal thermally induced carrier redistribution between the quantum dots. Spectral diffusion is observed and was used as a tool to correla…
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Cathodoluminescence spectra employing a shadow mask technique of InGaN layers grown by metal organic chemical vapor deposition on Si(111) substrates are reported. Sharp lines originating from InGaN quantum dots are observed. Temperature dependent measurements reveal thermally induced carrier redistribution between the quantum dots. Spectral diffusion is observed and was used as a tool to correlate up to three lines that originate from the same quantum dot. Variation of excitation density leads to identification of exciton and biexciton. Binding and anti-binding complexes are discovered.
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Submitted 16 October, 2006;
originally announced October 2006.
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Band gap and band parameters of InN and GaN from quasiparticle energy calculations based on exact-exchange density-functional theory
Authors:
Patrick Rinke,
Abdallah Qteish,
Momme Winkelnkemper,
Dieter Bimberg,
Joerg Neugebauer,
Matthias Scheffler
Abstract:
We have studied the electronic structure of InN and GaN employing G0W0 calculations based on exact-exchange density-functional theory. For InN our approach predicts a gap of 0.7 eV. Taking the Burnstein-Moss effect into account, the increase of the apparent quasiparticle gap with increasing electron concentration is in good agreement with the observed blue shift of the experimental optical absor…
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We have studied the electronic structure of InN and GaN employing G0W0 calculations based on exact-exchange density-functional theory. For InN our approach predicts a gap of 0.7 eV. Taking the Burnstein-Moss effect into account, the increase of the apparent quasiparticle gap with increasing electron concentration is in good agreement with the observed blue shift of the experimental optical absorption edge. Moreover, the concentration dependence of the effective mass, which results from the non-parabolicity of the conduction band, agrees well with recent experimental findings. Based on the quasiparticle band structure the parameter set for a 4x4 kp Hamiltonian has been derived.
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Submitted 5 October, 2006;
originally announced October 2006.
