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Engineering Nonporous Polymer Hybrids with Suppressed Heat Conduction and Enhanced Flame Retardancy via Molecular and Filler Design
Authors:
Henry Worden,
Mihir Chandra,
Yijie Zhou,
Zarif Ahmad Razin Bhuiyan,
Mouyang Cheng,
Krishnamurthy Munusamy,
Weiguo Hu,
Weibo Yan,
Siyu Wu,
Ruipeng Li,
Anna Chatterji,
Todd Emrick,
Jun Liu,
Yanfei Xu
Abstract:
This study presents a new strategy for achieving ultralow thermal conductivity in nonporous polymer/organic filler hybrids by suppressing heat capacity through tailored atomic vibrations to enhance thermal insulation. Unlike conventional polymer/inorganic filler hybrids, these hybrids exhibit interfacial thermal resistance one to three orders of magnitude lower. Combined experiments and simulation…
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This study presents a new strategy for achieving ultralow thermal conductivity in nonporous polymer/organic filler hybrids by suppressing heat capacity through tailored atomic vibrations to enhance thermal insulation. Unlike conventional polymer/inorganic filler hybrids, these hybrids exhibit interfacial thermal resistance one to three orders of magnitude lower. Combined experiments and simulations uncover thermal transport mechanisms. These hybrids demonstrate enhanced flame retardancy. Please see the abstract in the attached PDF.
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Submitted 13 October, 2025;
originally announced October 2025.
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Deploying Tiny LVLM Judges for Real-World Evaluation of Chart Models: Lessons Learned and Best Practices
Authors:
Md Tahmid Rahman Laskar,
Mohammed Saidul Islam,
Ridwan Mahbub,
Mizanur Rahman,
Amran Bhuiyan,
Israt Jahan,
Mir Tafseer Nayeem,
Shafiq Joty,
Enamul Hoque,
Jimmy Huang
Abstract:
Large Vision-Language Models (LVLMs) with only 7B parameters have shown promise as automated judges in chart comprehension tasks. However, tiny models (<=2B parameters) still perform poorly as judges, limiting their real-world use in resource-constrained settings. To address this, we propose two approaches to ensure cost-efficient evaluation: (i) multi-criteria prompting, which combines separate e…
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Large Vision-Language Models (LVLMs) with only 7B parameters have shown promise as automated judges in chart comprehension tasks. However, tiny models (<=2B parameters) still perform poorly as judges, limiting their real-world use in resource-constrained settings. To address this, we propose two approaches to ensure cost-efficient evaluation: (i) multi-criteria prompting, which combines separate evaluation criteria into a single query, and (ii) domain-adaptive transfer learning, in which we fine-tune a 2B-parameter LVLM on synthetic judgments in a chart dataset to create the ChartJudge. Experiments show that multi-criteria prompting exposes robustness gaps, which led to a huge drop in performance for 7B models, including specialized LVLM judges like LLaVA-Critic. In addition, we find that our tiny LVLM (ChartJudge) can effectively transfer knowledge from one dataset to another to make it a more specialized model. Our fine-grained analysis across chart types and query complexities offers actionable insights into trade-offs between model size, prompt design, and transferability, enabling scalable, low-cost evaluation for chart reasoning tasks.
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Submitted 10 October, 2025; v1 submitted 8 October, 2025;
originally announced October 2025.
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Enhanced Breakdown Voltage in $β$-Ga$_2$O$_3$ Schottky Barrier Diodes via Fast Neutron Irradiation and Electrothermal Annealing
Authors:
Saleh Ahmed Khan,
Sudipto Saha,
Ahmed Ibreljic,
Stephen Margiotta,
Jiawei Liu,
Walid Amir,
Surajit Chakraborty,
Uttam Singisetti,
A F M Anhar Uddin Bhuiyan
Abstract:
This study investigates the impact of fast neutron irradiation and post-radiation electro-thermal annealing on the electrical performance of $β$-Ga$_2$O$_3$ Schottky barrier diodes. Devices irradiated with 1 MeV neutrons at a high fluence of 1E15 n/cm^2 exhibited substantial degradation, including a drastic reduction in on-current and an increase in on-resistance. Electrothermal testing, conducted…
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This study investigates the impact of fast neutron irradiation and post-radiation electro-thermal annealing on the electrical performance of $β$-Ga$_2$O$_3$ Schottky barrier diodes. Devices irradiated with 1 MeV neutrons at a high fluence of 1E15 n/cm^2 exhibited substantial degradation, including a drastic reduction in on-current and an increase in on-resistance. Electrothermal testing, conducted through simultaneous current-voltage (J-V) measurements and thermal annealing, resulted in significant recovery. After four cycles of electro-thermal testing, the devices demonstrated significant improvements in performance, with a substantial recovery of on-current and a reduction in on-resistance compared to the post-radiation condition, approaching pre-radiation levels. Most recovery occurred during the first two cycles, with diminishing improvements in later cycles, indicating that most thermally recoverable traps were mitigated early. Capacitance-voltage (C-V) measurements revealed a substantial reduction in carrier concentration, decreasing from 3.2E16 cm^-3 pre-radiation to 5.5E15 cm^-3 after the first electro-thermal testing cycle, indicating an over 82% reduction. Following the third cycle, the carrier concentration partially recovered to 9.9E15 cm^-3, reflecting a carrier removal rate of ~22 cm^-1. The breakdown voltage exhibited a remarkable enhancement, increasing from approximately 300 V to 1.28 kV (a ~325% improvement) after the first electro-thermal testing, attributed to the reduction in carrier concentration by compensating radiation-induced traps. Subsequent testing reduced breakdown voltage slightly to 940 V due to partial recovery of carrier concentration, but it remained significantly higher than pre-radiation levels, highlighting the promise of $β$-Ga$_2$O$_3$ power devices for high-power applications in radiation-intense environments.
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Submitted 7 October, 2025;
originally announced October 2025.
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LLM-Based Data Science Agents: A Survey of Capabilities, Challenges, and Future Directions
Authors:
Mizanur Rahman,
Amran Bhuiyan,
Mohammed Saidul Islam,
Md Tahmid Rahman Laskar,
Ridwan Mahbub,
Ahmed Masry,
Shafiq Joty,
Enamul Hoque
Abstract:
Recent advances in large language models (LLMs) have enabled a new class of AI agents that automate multiple stages of the data science workflow by integrating planning, tool use, and multimodal reasoning across text, code, tables, and visuals. This survey presents the first comprehensive, lifecycle-aligned taxonomy of data science agents, systematically analyzing and mapping forty-five systems on…
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Recent advances in large language models (LLMs) have enabled a new class of AI agents that automate multiple stages of the data science workflow by integrating planning, tool use, and multimodal reasoning across text, code, tables, and visuals. This survey presents the first comprehensive, lifecycle-aligned taxonomy of data science agents, systematically analyzing and mapping forty-five systems onto the six stages of the end-to-end data science process: business understanding and data acquisition, exploratory analysis and visualization, feature engineering, model building and selection, interpretation and explanation, and deployment and monitoring. In addition to lifecycle coverage, we annotate each agent along five cross-cutting design dimensions: reasoning and planning style, modality integration, tool orchestration depth, learning and alignment methods, and trust, safety, and governance mechanisms. Beyond classification, we provide a critical synthesis of agent capabilities, highlight strengths and limitations at each stage, and review emerging benchmarks and evaluation practices. Our analysis identifies three key trends: most systems emphasize exploratory analysis, visualization, and modeling while neglecting business understanding, deployment, and monitoring; multimodal reasoning and tool orchestration remain unresolved challenges; and over 90% lack explicit trust and safety mechanisms. We conclude by outlining open challenges in alignment stability, explainability, governance, and robust evaluation frameworks, and propose future research directions to guide the development of robust, trustworthy, low-latency, transparent, and broadly accessible data science agents.
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Submitted 5 October, 2025;
originally announced October 2025.
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A Bimanual Gesture Interface for ROS-Based Mobile Manipulators Using TinyML and Sensor Fusion
Authors:
Najeeb Ahmed Bhuiyan,
M. Nasimul Huq,
Sakib H. Chowdhury,
Rahul Mangharam
Abstract:
Gesture-based control for mobile manipulators faces persistent challenges in reliability, efficiency, and intuitiveness. This paper presents a dual-hand gesture interface that integrates TinyML, spectral analysis, and sensor fusion within a ROS framework to address these limitations. The system uses left-hand tilt and finger flexion, captured using accelerometer and flex sensors, for mobile base n…
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Gesture-based control for mobile manipulators faces persistent challenges in reliability, efficiency, and intuitiveness. This paper presents a dual-hand gesture interface that integrates TinyML, spectral analysis, and sensor fusion within a ROS framework to address these limitations. The system uses left-hand tilt and finger flexion, captured using accelerometer and flex sensors, for mobile base navigation, while right-hand IMU signals are processed through spectral analysis and classified by a lightweight neural network. This pipeline enables TinyML-based gesture recognition to control a 7-DOF Kinova Gen3 manipulator. By supporting simultaneous navigation and manipulation, the framework improves efficiency and coordination compared to sequential methods. Key contributions include a bimanual control architecture, real-time low-power gesture recognition, robust multimodal sensor fusion, and a scalable ROS-based implementation. The proposed approach advances Human-Robot Interaction (HRI) for industrial automation, assistive robotics, and hazardous environments, offering a cost-effective, open-source solution with strong potential for real-world deployment and further optimization.
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Submitted 23 September, 2025;
originally announced September 2025.
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GiAnt: A Bio-Inspired Hexapod for Adaptive Terrain Navigation and Object Detection
Authors:
Aasfee Mosharraf Bhuiyan,
Md Luban Mehda,
Md. Thawhid Hasan Puspo,
Jubayer Amin Pritom
Abstract:
This paper presents the design, development and testing of GiAnt, an affordable hexapod which is inspired by the efficient motions of ants. The decision to model GiAnt after ants rather than other insects is rooted in ants' natural adaptability to a variety of terrains. This bio-inspired approach gives it a significant advantage in outdoor applications, offering terrain flexibility along with effi…
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This paper presents the design, development and testing of GiAnt, an affordable hexapod which is inspired by the efficient motions of ants. The decision to model GiAnt after ants rather than other insects is rooted in ants' natural adaptability to a variety of terrains. This bio-inspired approach gives it a significant advantage in outdoor applications, offering terrain flexibility along with efficient energy use. It features a lightweight 3D-printed and laser cut structure weighing 1.75 kg with dimensions of 310 mm x 200 mm x 120 mm. Its legs have been designed with a simple Single Degree of Freedom (DOF) using a link and crank mechanism. It is great for conquering challenging terrains such as grass, rocks, and steep surfaces. Unlike traditional robots using four wheels for motion, its legged design gives superior adaptability to uneven and rough surfaces. GiAnt's control system is built on Arduino, allowing manual operation. An effective way of controlling the legs of GiAnt was achieved by gait analysis. It can move up to 8 cm of height easily with its advanced leg positioning system. Furthermore, equipped with machine learning and image processing technology, it can identify 81 different objects in a live monitoring system. It represents a significant step towards creating accessible hexapod robots for research, exploration, and surveying, offering unique advantages in adaptability and control simplicity.
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Submitted 18 September, 2025;
originally announced September 2025.
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Graph Neural Network-Based Topology Optimization for Self-Supporting Structures in Additive Manufacturing
Authors:
Alireza Tabarraei,
Saquib Ahmad Bhuiyan
Abstract:
This paper presents a machine learning-based framework for topology optimization of self-supporting structures, specifically tailored for additive manufacturing (AM). By employing a graph neural network (GNN) that acts as a neural field over the finite element mesh, the framework effectively learns and predicts continuous material distributions. An integrated AM filter ensures printability by elim…
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This paper presents a machine learning-based framework for topology optimization of self-supporting structures, specifically tailored for additive manufacturing (AM). By employing a graph neural network (GNN) that acts as a neural field over the finite element mesh, the framework effectively learns and predicts continuous material distributions. An integrated AM filter ensures printability by eliminating unsupported overhangs, while the optimization process minimizes structural compliance under volume and stress constraints. The stress constraint is enforced using a differentiable p-norm aggregation of von Mises stress, promoting mechanical reliability in the optimized designs. A key advantage of the approach lies in its fully differentiable architecture, which leverages automatic differentiation throughout the optimization loop--eliminating the need for explicit sensitivity derivation for both the filter and the stress constraint. Numerical experiments demonstrate the ability of the framework to generate stress-constrained manufacturable topologies under various loading and boundary conditions, offering a practical pathway toward AM-ready high-performance designs with reduced post-processing requirements.
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Submitted 26 August, 2025;
originally announced August 2025.
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Design of broadband optical gain in GaSb-based waveguide amplifiers with asymmetric quantum wells
Authors:
Ifte Khairul Alam Bhuiyan,
Joonas Hilska,
Markus Peil,
Jukka Viheriala,
Mircea Guina
Abstract:
A design strategy for achieving broadband optical gain in GaSb-based semiconductor amplifiers operating beyond 2 μm is presented. By employing asymmetric GaInSb/AlGaAsSb quantum wells (QWs) of varying thicknesses, a flat and wide gain spectrum is demonstrated. The approach leverages carrier density and transition energy tuning across QWs to access various energy levels at specific current densitie…
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A design strategy for achieving broadband optical gain in GaSb-based semiconductor amplifiers operating beyond 2 μm is presented. By employing asymmetric GaInSb/AlGaAsSb quantum wells (QWs) of varying thicknesses, a flat and wide gain spectrum is demonstrated. The approach leverages carrier density and transition energy tuning across QWs to access various energy levels at specific current densities. Simulations using "Harold" self-consistent environment predict a full-width at half-maximum (FWHM) gain bandwidth exceeding 340 nm for a structure comprising one 7 nm and three 13 nm-thick QWs. The modelling parameters were validated against experimental data, ensuring a robust framework for designing broadband amplifiers and superluminescent diodes for mid-infrared applications.
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Submitted 24 August, 2025;
originally announced August 2025.
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Z-Pruner: Post-Training Pruning of Large Language Models for Efficiency without Retraining
Authors:
Samiul Basir Bhuiyan,
Md. Sazzad Hossain Adib,
Mohammed Aman Bhuiyan,
Muhammad Rafsan Kabir,
Moshiur Farazi,
Shafin Rahman,
Nabeel Mohammed
Abstract:
Large language models (LLMs) have rapidly advanced in recent years, achieving remarkable performance across a wide range of natural language processing tasks. However, this progress has come at the cost of increasingly large model sizes, which pose significant challenges for deployment, scalability, and energy efficiency. To address these limitations, post-training pruning has emerged as a promisi…
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Large language models (LLMs) have rapidly advanced in recent years, achieving remarkable performance across a wide range of natural language processing tasks. However, this progress has come at the cost of increasingly large model sizes, which pose significant challenges for deployment, scalability, and energy efficiency. To address these limitations, post-training pruning has emerged as a promising approach for reducing model size and inference latency without the need for retraining. Despite these advantages, many existing pruning methods result in substantial performance degradation or require computationally expensive fine-tuning. In this work, we introduce Z-Pruner, a novel post-training pruning method designed to induce sparsity in pretrained LLMs without any retraining. Unlike conventional approaches, Z-Pruner leverages both weight update magnitudes and activation patterns to identify and eliminate redundant parameters more effectively. Our method is model-agnostic, efficient, and easy to implement. We evaluate Z-Pruner using multiple widely-used LLM architectures, including LLaMA-2, LLaMA-3, and OPT, across a diverse set of standard language benchmarks. Experimental results demonstrate that Z-Pruner surpasses state-of-the-art pruning methods that require intensive weight updates. Specifically, Z-Pruner achieves the lowest perplexity scores and the highest overall average score for zero-shot accuracy. We have made the corresponding codes publicly available at https://github.com/sazzadadib/Z-Pruner.
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Submitted 18 August, 2025;
originally announced August 2025.
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ProteoKnight: Convolution-based phage virion protein classification and uncertainty analysis
Authors:
Samiha Afaf Neha,
Abir Ahammed Bhuiyan,
Md. Ishrak Khan
Abstract:
\textbf{Introduction:} Accurate prediction of Phage Virion Proteins (PVP) is essential for genomic studies due to their crucial role as structural elements in bacteriophages. Computational tools, particularly machine learning, have emerged for annotating phage protein sequences from high-throughput sequencing. However, effective annotation requires specialized sequence encodings. Our paper introdu…
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\textbf{Introduction:} Accurate prediction of Phage Virion Proteins (PVP) is essential for genomic studies due to their crucial role as structural elements in bacteriophages. Computational tools, particularly machine learning, have emerged for annotating phage protein sequences from high-throughput sequencing. However, effective annotation requires specialized sequence encodings. Our paper introduces ProteoKnight, a new image-based encoding method that addresses spatial constraints in existing techniques, yielding competitive performance in PVP classification using pre-trained convolutional neural networks. Additionally, our study evaluates prediction uncertainty in binary PVP classification through Monte Carlo Dropout (MCD). \textbf{Methods:} ProteoKnight adapts the classical DNA-Walk algorithm for protein sequences, incorporating pixel colors and adjusting walk distances to capture intricate protein features. Encoded sequences were classified using multiple pre-trained CNNs. Variance and entropy measures assessed prediction uncertainty across proteins of various classes and lengths. \textbf{Results:} Our experiments achieved 90.8% accuracy in binary classification, comparable to state-of-the-art methods. Multi-class classification accuracy remains suboptimal. Our uncertainty analysis unveils variability in prediction confidence influenced by protein class and sequence length. \textbf{Conclusions:} Our study surpasses frequency chaos game representation (FCGR) by introducing novel image encoding that mitigates spatial information loss limitations. Our classification technique yields accurate and robust PVP predictions while identifying low-confidence predictions.
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Submitted 10 August, 2025;
originally announced August 2025.
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Free-Fermion Dynamics with Measurements: Topological Classification and Adaptive Preparation of Topological States
Authors:
Asadullah Bhuiyan,
Haining Pan,
Chao-Ming Jian
Abstract:
We develop a general framework for classifying fermionic dynamical systems with measurements using symmetry and topology. We discuss two complementary classification schemes based on the Altland-Zirnbauer tenfold way: (1) the many-body evolution operator (mEO) symmetry class, which classifies fermionic dynamics at the many-body level and generalizes to interacting dynamics, and (2) the single-part…
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We develop a general framework for classifying fermionic dynamical systems with measurements using symmetry and topology. We discuss two complementary classification schemes based on the Altland-Zirnbauer tenfold way: (1) the many-body evolution operator (mEO) symmetry class, which classifies fermionic dynamics at the many-body level and generalizes to interacting dynamics, and (2) the single-particle transfer matrix (sTM) symmetry class, which classifies free-fermion dynamics at the single-particle level and connects to Anderson localization physics. In the free-fermion limit, these two frameworks are in one-to-one correspondence and yield equivalent topological classifications of area-law entangled dynamical phases. This leads to a novel dynamical bulk-boundary correspondence: the topology of the dynamical system's spacetime \textit{bulk} determines the topology of the area-law entangled steady-state ensemble living on its temporal \textit{boundary}. Building on this correspondence, we provide a general realization of topological dynamical phases using Gaussian adaptive circuits. They are designed to prepare and stabilize free-fermion topological states as their steady states in \textit{any} spatial dimension. While circuits with exponentially local operations can stabilize a single topological steady state, those with finite-range operations can reach a topological steady-state ensemble. As a demonstration, we explicitly construct and simulate 2+1d adaptive circuits that realize mEO-class-A topological dynamics. We show that the finite-range versions converge to an ensemble of Chern insulators in ${\cal O}(1)$ circuit depth. We numerically study the topological phase transitions and dynamical domain-wall modes between different topological dynamical phases in this symmetry class. We also analyze the robustness of our adaptive circuit protocol to coherent noise.
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Submitted 13 August, 2025; v1 submitted 17 July, 2025;
originally announced July 2025.
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Quasi-Vertical $β$-Ga$_2$O$_3$ Schottky Diodes on Sapphire Using All-LPCVD Growth and Plasma-Free Ga-Assisted Etching
Authors:
Saleh Ahmed Khan,
Ahmed Ibreljic,
A F M Anhar Uddin Bhuiyan
Abstract:
This work demonstrates quasi-vertical beta-Ga2O3 Schottky barrier diodes (SBDs) fabricated on c-plane sapphire using an all-LPCVD, plasma-free process integrating epitaxial growth of high-quality beta-Ga2O3 and in-situ Ga-assisted etching. A 6.3 micron-thick (-201)-oriented beta-Ga2O3 layer was grown on c-sapphire with a 6-degree miscut, comprising a 3.15 micron moderately doped (2.1e17 cm^-3) dri…
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This work demonstrates quasi-vertical beta-Ga2O3 Schottky barrier diodes (SBDs) fabricated on c-plane sapphire using an all-LPCVD, plasma-free process integrating epitaxial growth of high-quality beta-Ga2O3 and in-situ Ga-assisted etching. A 6.3 micron-thick (-201)-oriented beta-Ga2O3 layer was grown on c-sapphire with a 6-degree miscut, comprising a 3.15 micron moderately doped (2.1e17 cm^-3) drift layer and a heavily doped (1e19 cm^-3) contact layer on a UID buffer. Mesa isolation used Ga-assisted LPCVD etching, producing a 60° inclined mesa sidewalls with an etch depth of 3.6 micron. SBDs showed excellent forward J-V behavior: 1.22 V turn-on, 1.29 ideality factor, and 0.83 eV barrier height. Minimum differential specific on-resistance was 8.6 mOhm*cm^2 with high current density (252 A/cm^2 at 5 V). C-V profiling revealed uniform doping at 2.1e17 cm^-3. J-V-T from 25 C to 250 C confirmed thermionic emission. Barrier height increased from 0.80 to 1.16 eV, and ideality factor from 1.31 to 1.42. Reverse leakage current remained low, increasing from ~5e-6 A/cm^2 to ~1e-4 A/cm^2; Ion/Ioff decreased from ~1e7 to 5e5. Breakdown voltages with moderately doped (2.1e17 cm^-3) drift layer ranged between 73 and 100 V, with corresponding fields of 1.66 to 1.94 MV/cm. These results highlight the potential of LPCVD-grown and etched beta-Ga2O3 devices for high-performance power electronic applications.
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Submitted 22 September, 2025; v1 submitted 8 July, 2025;
originally announced July 2025.
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Topological Signatures vs. Gradient Histograms: A Comparative Study for Medical Image Classification
Authors:
Faisal Ahmed,
Mohammad Alfrad Nobel Bhuiyan
Abstract:
We present the first comparative study of two fundamentally distinct feature extraction techniques: Histogram of Oriented Gradients (HOG) and Topological Data Analysis (TDA), for medical image classification using retinal fundus images. HOG captures local texture and edge patterns through gradient orientation histograms, while TDA, using cubical persistent homology, extracts high-level topological…
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We present the first comparative study of two fundamentally distinct feature extraction techniques: Histogram of Oriented Gradients (HOG) and Topological Data Analysis (TDA), for medical image classification using retinal fundus images. HOG captures local texture and edge patterns through gradient orientation histograms, while TDA, using cubical persistent homology, extracts high-level topological signatures that reflect the global structure of pixel intensities. We evaluate both methods on the large APTOS dataset for two classification tasks: binary detection (normal versus diabetic retinopathy) and five-class diabetic retinopathy severity grading. From each image, we extract 26244 HOG features and 800 TDA features, using them independently to train seven classical machine learning models with 10-fold cross-validation. XGBoost achieved the best performance in both cases: 94.29 percent accuracy (HOG) and 94.18 percent (TDA) on the binary task; 74.41 percent (HOG) and 74.69 percent (TDA) on the multi-class task. Our results show that both methods offer competitive performance but encode different structural aspects of the images. This is the first work to benchmark gradient-based and topological features on retinal imagery. The techniques are interpretable, applicable to other medical imaging domains, and suitable for integration into deep learning pipelines.
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Submitted 2 July, 2025;
originally announced July 2025.
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LPCVD based Plasma Damage Free in situ etching of $β$-Ga$_2$O$_3$ using Solid Source Gallium
Authors:
Saleh Ahmed Khan,
Ahmed Ibreljic,
A F M Anhar Uddin Bhuiyan
Abstract:
This work demonstrates a novel in situ etching technique for $β$-Ga$_2$O$_3$ using solid-source metallic Ga in a LPCVD system, enabling clean, anisotropic, plasma damage-free etching. Etching behavior was systematically studied on (-201) $β$-Ga$_2$O$_3$ films and patterned (010) $β$-Ga$_2$O$_3$ substrates as a function of temperature, Ar carrier gas flow, and Ga source-to-substrate distance. The p…
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This work demonstrates a novel in situ etching technique for $β$-Ga$_2$O$_3$ using solid-source metallic Ga in a LPCVD system, enabling clean, anisotropic, plasma damage-free etching. Etching behavior was systematically studied on (-201) $β$-Ga$_2$O$_3$ films and patterned (010) $β$-Ga$_2$O$_3$ substrates as a function of temperature, Ar carrier gas flow, and Ga source-to-substrate distance. The process exhibits vapor transport- and surface-reaction-limited behavior, with etch rates reaching a maximum of $\sim$2.25~$μ$m/hr on (010) substrates at 1050~$^\circ$C and 2 cm spacing. Etch rates decrease sharply with increasing source-to-substrate distance due to reduced Ga vapor availability, while elevated temperatures enhance surface reaction kinetics through increased Ga reactivity and suboxide formation, leading to enhanced etch rates. In-plane anisotropy studies using radial trench patterns reveal that the (100) orientation produces the most stable etch front, characterized by smooth, vertical sidewalls and minimal lateral etching, consistent with its lowest surface free energy. In contrast, orientations such as (101), which possess higher surface energy, exhibit pronounced lateral etching and micro-faceting. As the trench orientation progressively deviates from (100), lateral etching increases. Facet evolution is observed between (100) and (-102), where stepped sidewalls composed of alternating (100) and (-102) segments progressively transition into a single inclined facet, which stabilizes along (100) or (-102) depending on the trench orientation. The (100)-aligned fins exhibit minimal bottom curvature, while (201)-aligned structures display increased under-etching and trench rounding.
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Submitted 11 September, 2025; v1 submitted 21 June, 2025;
originally announced June 2025.
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Evolution of ReID: From Early Methods to LLM Integration
Authors:
Amran Bhuiyan,
Mizanur Rahman,
Md Tahmid Rahman Laskar,
Aijun An,
Jimmy Xiangji Huang
Abstract:
Person re-identification (ReID) has evolved from handcrafted feature-based methods to deep learning approaches and, more recently, to models incorporating large language models (LLMs). Early methods struggled with variations in lighting, pose, and viewpoint, but deep learning addressed these issues by learning robust visual features. Building on this, LLMs now enable ReID systems to integrate sema…
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Person re-identification (ReID) has evolved from handcrafted feature-based methods to deep learning approaches and, more recently, to models incorporating large language models (LLMs). Early methods struggled with variations in lighting, pose, and viewpoint, but deep learning addressed these issues by learning robust visual features. Building on this, LLMs now enable ReID systems to integrate semantic and contextual information through natural language. This survey traces that full evolution and offers one of the first comprehensive reviews of ReID approaches that leverage LLMs, where textual descriptions are used as privileged information to improve visual matching. A key contribution is the use of dynamic, identity-specific prompts generated by GPT-4o, which enhance the alignment between images and text in vision-language ReID systems. Experimental results show that these descriptions improve accuracy, especially in complex or ambiguous cases. To support further research, we release a large set of GPT-4o-generated descriptions for standard ReID datasets. By bridging computer vision and natural language processing, this survey offers a unified perspective on the field's development and outlines key future directions such as better prompt design, cross-modal transfer learning, and real-world adaptability.
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Submitted 15 June, 2025;
originally announced June 2025.
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6G communications through sub-Terahertz CMOS power amplifiers: Design challenges and trends
Authors:
Jun Yan Lee,
Duo Wu,
Xuanrui Guo,
Jian Ding Tan,
Teh Jia Yew,
Zi Neng Ng,
Mohammad Arif Sobhan Bhuiyan,
Mahdi H. Miraz
Abstract:
The fifth-generation (5G) network faces limitations in supporting emerging applications, such as artificial intelligence (AI), virtual reality (VR) and digital twins. To overcome these confines, sub-Terahertz (sub-THz) and Terahertz (THz) technologies are considered to be key enablers of effective 6G wireless communications, offering higher transmission speeds, longer range and wider bandwidth. Ac…
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The fifth-generation (5G) network faces limitations in supporting emerging applications, such as artificial intelligence (AI), virtual reality (VR) and digital twins. To overcome these confines, sub-Terahertz (sub-THz) and Terahertz (THz) technologies are considered to be key enablers of effective 6G wireless communications, offering higher transmission speeds, longer range and wider bandwidth. Achieving these capabilities requires careful engineering of 6G transceivers, with a focus on efficient power amplifiers (PAs) in the front-end, which play a critical role in effectively amplifying and transmitting signals over long distances. Complimentary metal-oxidesemiconductor (CMOS) technology-based PA in sub-THz suffers severe parasitic and limited maximum frequency, however, this has eventually been solved by different design architectures and scaling down of CMOS technology to break through the frequency limitations. In this article, we reviewed the potentials and capabilities of CMOS technology for designing 6G hardware, identified the state-of-art PA designs in the sub-THz band and then examined as well as compared the designs to identify the suitable design strategies for better performance. The circuit optimisation techniques, such as coupled-line, passive gain boosting method, zero-degree power splitting, load-pull matching, diode and capacitor linearisation for better gain, saturated output power and power added efficiency, are considered for the PA design architectures at different sub-THz bands. Furthermore, these methods are summarised and discussed with their advantages and disadvantages in lieu with their performances. The PA design trends, challenges and future perspectives are also presented and discussed. Therefore, this comprehensive review article will serve as a comparative study and reference for future PA designs for radio frequency integrated circuits (RFIC).
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Submitted 19 May, 2025;
originally announced May 2025.
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Judging the Judges: Can Large Vision-Language Models Fairly Evaluate Chart Comprehension and Reasoning?
Authors:
Md Tahmid Rahman Laskar,
Mohammed Saidul Islam,
Ridwan Mahbub,
Ahmed Masry,
Mizanur Rahman,
Amran Bhuiyan,
Mir Tafseer Nayeem,
Shafiq Joty,
Enamul Hoque,
Jimmy Huang
Abstract:
Charts are ubiquitous as they help people understand and reason with data. Recently, various downstream tasks, such as chart question answering, chart2text, and fact-checking, have emerged. Large Vision-Language Models (LVLMs) show promise in tackling these tasks, but their evaluation is costly and time-consuming, limiting real-world deployment. While using LVLMs as judges to assess the chart comp…
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Charts are ubiquitous as they help people understand and reason with data. Recently, various downstream tasks, such as chart question answering, chart2text, and fact-checking, have emerged. Large Vision-Language Models (LVLMs) show promise in tackling these tasks, but their evaluation is costly and time-consuming, limiting real-world deployment. While using LVLMs as judges to assess the chart comprehension capabilities of other LVLMs could streamline evaluation processes, challenges like proprietary datasets, restricted access to powerful models, and evaluation costs hinder their adoption in industrial settings. To this end, we present a comprehensive evaluation of 13 open-source LVLMs as judges for diverse chart comprehension and reasoning tasks. We design both pairwise and pointwise evaluation tasks covering criteria like factual correctness, informativeness, and relevancy. Additionally, we analyze LVLM judges based on format adherence, positional consistency, length bias, and instruction-following. We focus on cost-effective LVLMs (<10B parameters) suitable for both research and commercial use, following a standardized evaluation protocol and rubric to measure the LVLM judge's accuracy. Experimental results reveal notable variability: while some open LVLM judges achieve GPT-4-level evaluation performance (about 80% agreement with GPT-4 judgments), others struggle (below ~10% agreement). Our findings highlight that state-of-the-art open-source LVLMs can serve as cost-effective automatic evaluators for chart-related tasks, though biases such as positional preference and length bias persist.
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Submitted 7 July, 2025; v1 submitted 13 May, 2025;
originally announced May 2025.
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Low latency FPGA implementation of twisted Edward curve cryptography hardware accelerator over prime field
Authors:
Md Rownak Hossain,
Md Sazedur Rahman,
Kh Shahriya Zaman,
Walid El Fezzani,
Mohammad Arif Sobhan Bhuiyan,
Chia Chao Kang,
Teh Jia Yew,
Mahdi H. Miraz
Abstract:
The performance of any elliptic curve cryptography hardware accelerator significantly relies on the efficiency of the underlying point multiplication (PM) architecture. This article presents a hardware implementation of field-programmable gate array (FPGA) based modular arithmetic, group operation, and point multiplication unit on the twisted Edwards curve (Edwards25519) over the 256-bit prime fie…
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The performance of any elliptic curve cryptography hardware accelerator significantly relies on the efficiency of the underlying point multiplication (PM) architecture. This article presents a hardware implementation of field-programmable gate array (FPGA) based modular arithmetic, group operation, and point multiplication unit on the twisted Edwards curve (Edwards25519) over the 256-bit prime field. An original hardware architecture of a unified point operation module in projective coordinates that executes point addition and point doubling within a single module has been developed, taking only 646 clock cycles and ensuring a better security level than conventional approaches. The proposed point multiplication module consumes 1.4 ms time, operating at a maximal clock frequency of 117.8 MHz utilising 164,730 clock cycles having 183.38 kbps throughput on the Xilinx Virtex-5 FPGA platform for 256-bit length of key. The comparative assessment of latency and throughput across various related recent works indicates the effectiveness of our proposed PM architecture. Finally, this high throughput and low latency PM architecture will be a good candidate for rapid data encryption in high-speed wireless communication networks.
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Submitted 30 April, 2025;
originally announced April 2025.
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Optimised Design of a Current Mirror in 150 nm GaAs Technology
Authors:
Lua Ying Qian,
Chia Chao Kang,
Tan Jian Ding,
Mohammad Arif Sobhan Bhuiyan,
Khairun Nisa Minhad,
Mahdi H. Miraz
Abstract:
The Current Mirror (CM) is a basic building block commonly used in analogue and mixed-signal integrated circuits. Its significance lies in its ability to replicate and precisely regulate the current, making it crucial in various applications such as amplifiers, filters and data converters. Recently, there has been a growing need for smaller and more energy-efficient Radio Frequency (RF) devices du…
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The Current Mirror (CM) is a basic building block commonly used in analogue and mixed-signal integrated circuits. Its significance lies in its ability to replicate and precisely regulate the current, making it crucial in various applications such as amplifiers, filters and data converters. Recently, there has been a growing need for smaller and more energy-efficient Radio Frequency (RF) devices due to the advancements in wireless communication, the Internet of Things (IoT) and portable electronics. This research aims to propose an improved and optimised CM design focusing on compactness and energy-efficient operation. Through a comprehensive methodology involving transistor sizing, biasing techniques, load resistance selection, frequency response stabilisation and noise analysis, the proposed high swing CM design achieves a gain of at least 6.005 dB, a reduced power consumption of 91.17 mW, a wide bandwidth of 22.60 kHz and improved linearity as well as accuracy through precise current matching and minimised mismatch. This optimised CM design will further boost the realisation of compact and lower power RF devices, contributing to the advancement of analogue circuit design techniques and enhancing system performance, accuracy and reliability.
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Submitted 20 February, 2025;
originally announced February 2025.
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Leveraging Video Vision Transformer for Alzheimer's Disease Diagnosis from 3D Brain MRI
Authors:
Taymaz Akan,
Sait Alp,
Md. Shenuarin Bhuiyan,
Elizabeth A. Disbrow,
Steven A. Conrad,
John A. Vanchiere,
Christopher G. Kevil,
Mohammad A. N. Bhuiyan
Abstract:
Alzheimer's disease (AD) is a neurodegenerative disorder affecting millions worldwide, necessitating early and accurate diagnosis for optimal patient management. In recent years, advancements in deep learning have shown remarkable potential in medical image analysis. Methods In this study, we present "ViTranZheimer," an AD diagnosis approach which leverages video vision transformers to analyze 3D…
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Alzheimer's disease (AD) is a neurodegenerative disorder affecting millions worldwide, necessitating early and accurate diagnosis for optimal patient management. In recent years, advancements in deep learning have shown remarkable potential in medical image analysis. Methods In this study, we present "ViTranZheimer," an AD diagnosis approach which leverages video vision transformers to analyze 3D brain MRI data. By treating the 3D MRI volumes as videos, we exploit the temporal dependencies between slices to capture intricate structural relationships. The video vision transformer's self-attention mechanisms enable the model to learn long-range dependencies and identify subtle patterns that may indicate AD progression. Our proposed deep learning framework seeks to enhance the accuracy and sensitivity of AD diagnosis, empowering clinicians with a tool for early detection and intervention. We validate the performance of the video vision transformer using the ADNI dataset and conduct comparative analyses with other relevant models. Results The proposed ViTranZheimer model is compared with two hybrid models, CNN-BiLSTM and ViT-BiLSTM. CNN-BiLSTM is the combination of a convolutional neural network (CNN) and a bidirectional long-short-term memory network (BiLSTM), while ViT-BiLSTM is the combination of a vision transformer (ViT) with BiLSTM. The accuracy levels achieved in the ViTranZheimer, CNN-BiLSTM, and ViT-BiLSTM models are 98.6%, 96.479%, and 97.465%, respectively. ViTranZheimer demonstrated the highest accuracy at 98.6%, outperforming other models in this evaluation metric, indicating its superior performance in this specific evaluation metric. Conclusion This research advances the understanding of applying deep learning techniques in neuroimaging and Alzheimer's disease research, paving the way for earlier and less invasive clinical diagnosis.
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Submitted 26 January, 2025;
originally announced January 2025.
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Electrical and Structural Properties of In-Situ MOCVD Grown Al$_2$O$_3$/$β$-Ga$_2$O$_3$ and Al$_2$O$_3$/$β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ MOSCAPs
Authors:
A F M Anhar Uddin Bhuiyan,
Lingyu Meng,
Dong Su Yu,
Sushovan Dhara,
Hsien-Lien Huang,
Vijay Gopal Thirupakuzi Vangipuram,
Jinwoo Hwang,
Siddharth Rajan,
Hongping Zhao
Abstract:
This study investigates the electrical and structural properties of MOSCAPs with in-situ MOCVD-grown Al$_2$O$_3$ dielectrics on (010) $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ films. The Al$_2$O$_3$/$β$-Ga$_2$O$_3$ MOSCAPs showed a strong dependence on Al$_2$O$_3$ deposition temperature. At 900$^\circ$C, reduced voltage hysteresis ($\sim$0.3 V) and improved reverse breakdown voltage (74.…
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This study investigates the electrical and structural properties of MOSCAPs with in-situ MOCVD-grown Al$_2$O$_3$ dielectrics on (010) $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ films. The Al$_2$O$_3$/$β$-Ga$_2$O$_3$ MOSCAPs showed a strong dependence on Al$_2$O$_3$ deposition temperature. At 900$^\circ$C, reduced voltage hysteresis ($\sim$0.3 V) and improved reverse breakdown voltage (74.5 V) were observed, with breakdown fields of 5.01 MV/cm in Al$_2$O$_3$ and 4.11 MV/cm in $β$-Ga$_2$O$_3$. At 650$^\circ$C, higher hysteresis ($\sim$3.44 V) and lower reverse breakdown voltage (38.8 V) were observed, with breakdown fields of 3.69 MV/cm in Al$_2$O$_3$ and 2.87 MV/cm in $β$-Ga$_2$O$_3$. However, forward breakdown fields improved from 5.62 MV/cm (900$^\circ$C) to 7.25 MV/cm (650$^\circ$C). STEM revealed improved crystallinity and sharper interfaces at 900$^\circ$C, enhancing reverse breakdown performance. For Al$_2$O$_3$/$β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ MOSCAPs, increasing Al composition ($x$ = 5.5\% to 9.2\%) reduced carrier concentration and improved reverse breakdown fields from 2.55 to 2.90 MV/cm in $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ and 2.41 to 3.13 MV/cm in Al$_2$O$_3$. Forward breakdown fields in Al$_2$O$_3$ improved from 5.0 to 5.4 MV/cm as Al composition increased. STEM confirmed compositional homogeneity and excellent stoichiometry of Al$_2$O$_3$ and $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ layers. These findings highlight the robust electrical performance, high breakdown fields, and structural quality of Al$_2$O$_3$/$β$-Ga$_2$O$_3$ and Al$_2$O$_3$/$β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ MOSCAPs for high-power applications.
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Submitted 22 May, 2025; v1 submitted 17 January, 2025;
originally announced January 2025.
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Thermal Annealing and Radiation Effects on Structural and Electrical Properties of NbN/GaN Superconductor/Semiconductor Junction
Authors:
Stephen Margiotta,
Binzhi Liu,
Saleh Ahmed Khan,
Gabriel Calderon Ortiz,
Ahmed Ibreljic,
Jinwoo Hwang,
A F M Anhar Uddin Bhuiyan
Abstract:
In the rapidly evolving field of quantum computing, niobium nitride (NbN) superconductors have emerged as integral components due to their unique structural properties, including a high superconducting transition temperature (Tc), exceptional electrical conductivity, and compatibility with advanced device architectures. This study investigates the impact of high-temperature annealing and high-dose…
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In the rapidly evolving field of quantum computing, niobium nitride (NbN) superconductors have emerged as integral components due to their unique structural properties, including a high superconducting transition temperature (Tc), exceptional electrical conductivity, and compatibility with advanced device architectures. This study investigates the impact of high-temperature annealing and high-dose gamma irradiation on the structural and superconducting properties of NbN films grown on GaN via reactive DC magnetron sputtering. The as-deposited cubic δ-NbN (111) films exhibited a high-intensity XRD peak, high Tc of 12.82K, and an atomically flat surface. Annealing at 500 and 950 °C for varying durations revealed notable structural and surface changes. High-resolution STEM indicated improved local ordering, while AFM showed reduced surface roughness after annealing. XPS revealed a gradual increase in the Nb/N ratio with higher annealing temperatures and durations. High-resolution XRD and STEM analyses showed lattice constant modifications in δ-NbN films, attributed to residual stress changes following annealing. Additionally, XRD phi-scans revealed sixfold symmetry in NbN films due to rotational domains relative to GaN. While Tc remained stable after annealing at 500 °C, increasing the annealing temperature to 950 °C degraded Tc to ~8K and reduced the residual resistivity ratio from 0.85 in as-deposited films to 0.29 after 30 minutes. The effects of gamma radiation (5 Mrad (Si)) were also studied, demonstrating minimal changes to crystallinity and superconducting performance, indicating excellent radiation resilience. These findings highlight the potential of NbN superconductors for integration into advanced quantum devices and their suitability for applications in radiation-intensive environments such as space, satellites, and nuclear power plants.
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Submitted 28 May, 2025; v1 submitted 13 January, 2025;
originally announced January 2025.
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Iris Recognition for Infants
Authors:
Rasel Ahmed Bhuiyan,
Mateusz Trokielewicz,
Piotr Maciejewicz,
Sherri Bucher,
Adam Czajka
Abstract:
Non-invasive, efficient, physical token-less, accurate and stable identification methods for newborns may prevent baby swapping at birth, limit baby abductions and improve post-natal health monitoring across geographies, within the context of both the formal (i.e., hospitals) and informal (i.e., humanitarian and fragile settings) health sectors. This paper explores the feasibility of application i…
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Non-invasive, efficient, physical token-less, accurate and stable identification methods for newborns may prevent baby swapping at birth, limit baby abductions and improve post-natal health monitoring across geographies, within the context of both the formal (i.e., hospitals) and informal (i.e., humanitarian and fragile settings) health sectors. This paper explores the feasibility of application iris recognition to build biometric identifiers for 4-6 week old infants. We (a) collected near infrared (NIR) iris images from 17 infants using a specially-designed NIR iris sensor; (b) evaluated six iris recognition methods to assess readiness of the state-of-the-art iris recognition to be applied to newborns and infants; (c) proposed a new segmentation model that correctly detects iris texture within infants iris images, and coupled it with several iris texture encoding approaches to offer, to the first of our knowledge, a fully-operational infant iris recognition system; and, (d) trained a StyleGAN-based model to synthesize iris images mimicking samples acquired from infants to deliver to the research community privacy-safe infant iris images. The proposed system, incorporating the specially-designed iris sensor and segmenter, and applied to the collected infant iris samples, achieved Equal Error Rate (EER) of 3\% and Area Under ROC Curve (AUC) of 99\%, compared to EER$\geq$20\% and AUC$\leq$88\% obtained for state of the art adult iris recognition systems. This suggests that it may be feasible to design methods that succesfully extract biometric features from infant irises.
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Submitted 2 January, 2025;
originally announced January 2025.
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LPCVD Grown Si-Doped $β$-Ga$_2$O$_3$ Films with Promising Electron Mobilities
Authors:
Saleh Ahmed Khan,
Ahmed Ibreljic,
Stephen Margiotta,
A F M Anhar Uddin Bhuiyan
Abstract:
We systematically investigated the growth of Si-doped $β$-Ga$_2$O$_3$ films using LPCVD system, achieving high electron mobilities of 162 cm$^2$/V.s and 149 cm$^2$/V.s at carrier concentrations of $1.51 \times 10^{17}$ cm$^{-3}$ and $1.15 \times 10^{17}$ cm$^{-3}$, respectively, for homoepitaxial (010) $β$-Ga$_2$O$_3$ films grown on $β$-Ga$_2$O$_3$ substrates and heteroepitaxial (-201) $β$-Ga$_2$O…
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We systematically investigated the growth of Si-doped $β$-Ga$_2$O$_3$ films using LPCVD system, achieving high electron mobilities of 162 cm$^2$/V.s and 149 cm$^2$/V.s at carrier concentrations of $1.51 \times 10^{17}$ cm$^{-3}$ and $1.15 \times 10^{17}$ cm$^{-3}$, respectively, for homoepitaxial (010) $β$-Ga$_2$O$_3$ films grown on $β$-Ga$_2$O$_3$ substrates and heteroepitaxial (-201) $β$-Ga$_2$O$_3$ films grown on off-axis c-sapphire substrates with 6° miscut, representing the highest mobilities reported for LPCVD-grown $β$-Ga$_2$O$_3$ materials. Carrier concentrations were precisely tuned by varying SiCl$_4$ flow rates at a growth temperature of 1000°C, resulting in concentrations ranging from $1.15 \times 10^{17}$ to $1.19 \times 10^{19}$ cm$^{-3}$, as confirmed by both Hall and C-V measurements. The films exhibited high crystalline quality, confirmed by high-resolution XRD and Raman spectroscopy, indicating phase purity and structural integrity. Surface morphologies characterized by FESEM and AFM imaging showed a strong correlation between carrier concentrations and surface smoothness, with lower concentrations resulting in reduced RMS roughness. SIMS analysis revealed uniform Si incorporation, with low carbon, hydrogen, and chlorine impurities below detection limits, indicating high purity of the films. A high low-temperature peak mobility exceeding 843 cm$^2$/V$\cdot$s was achieved for (-201) $β$-Ga$_2$O$_3$ films at 80 K, highlighting the high purity and low compensation of these films. These findings emphasize the potential of LPCVD growth system for producing high-purity $β$-Ga$_2$O$_3$ films with thickness ranging between ~2.3-11.7 $μ$m and faster growth rates (~4.7-17 $μ$m/hr), promising transport properties, controllable doping, and scalability for developing high power vertical devices.
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Submitted 11 January, 2025; v1 submitted 28 November, 2024;
originally announced December 2024.
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Radiation Resilience of $β$-Ga$_2$O$_3$ Schottky Barrier Diodes Under High Dose Gamma Radiation
Authors:
Saleh Ahmed Khan,
Sudipto Saha,
Uttam Singisetti,
A F M Anhar Uddin Bhuiyan
Abstract:
A systematic investigation of the electrical characteristics of \b{eta}-Ga2O3 Schottky barrier diodes (SBDs) has been conducted under high-dose 60Co gamma radiation, with total cumulative doses reaching up to 5 Mrad (Si). Initial exposure of the diodes to 1 Mrad resulted in a significant decrease in on-current and an increase in on-resistance compared to the pre-radiation condition, likely due to…
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A systematic investigation of the electrical characteristics of \b{eta}-Ga2O3 Schottky barrier diodes (SBDs) has been conducted under high-dose 60Co gamma radiation, with total cumulative doses reaching up to 5 Mrad (Si). Initial exposure of the diodes to 1 Mrad resulted in a significant decrease in on-current and an increase in on-resistance compared to the pre-radiation condition, likely due to the generation of radiation-induced deep-level acceptor traps. However, upon exposure to higher gamma radiation doses of 3 and 5 Mrad, partial recovery of the device performance occurred, attributed to a radiation annealing effect. The capacitance-voltage (C-V) characterization revealed that the net carrier concentration in the $β$-Ga$_2$O$_3$ drift layer reduced from $\sim$3.19 $\times$ 10$^{16}$ cm$^{-3}$ to $\sim$3.05 $\times$ 10$^{16}$ cm$^{-3}$ after 5 Mrad (Si) irradiation. Temperature-dependent I-V characteristics showed that irradiation leads to a reduction in both forward and reverse current across all investigated temperatures ranging from 25 to 250$^\circ$C, accompanied by slight increases in on-resistance, ideality factors, and Schottky barrier heights. The reverse breakdown characteristics of the $β$-Ga$_2$O$_3$ SBDs showed a slight increase of the breakdown voltage after radiation. Overall, $β$-Ga$_2$O$_3$ Schottky diode exhibits high resilience to gamma irradiation, with performance degradation mitigated by radiation-induced self-recovery, highlighting its potential for radiation-hardened electronic applications in extreme environments.
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Submitted 11 January, 2025; v1 submitted 20 August, 2024;
originally announced August 2024.
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A Systematic Survey and Critical Review on Evaluating Large Language Models: Challenges, Limitations, and Recommendations
Authors:
Md Tahmid Rahman Laskar,
Sawsan Alqahtani,
M Saiful Bari,
Mizanur Rahman,
Mohammad Abdullah Matin Khan,
Haidar Khan,
Israt Jahan,
Amran Bhuiyan,
Chee Wei Tan,
Md Rizwan Parvez,
Enamul Hoque,
Shafiq Joty,
Jimmy Huang
Abstract:
Large Language Models (LLMs) have recently gained significant attention due to their remarkable capabilities in performing diverse tasks across various domains. However, a thorough evaluation of these models is crucial before deploying them in real-world applications to ensure they produce reliable performance. Despite the well-established importance of evaluating LLMs in the community, the comple…
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Large Language Models (LLMs) have recently gained significant attention due to their remarkable capabilities in performing diverse tasks across various domains. However, a thorough evaluation of these models is crucial before deploying them in real-world applications to ensure they produce reliable performance. Despite the well-established importance of evaluating LLMs in the community, the complexity of the evaluation process has led to varied evaluation setups, causing inconsistencies in findings and interpretations. To address this, we systematically review the primary challenges and limitations causing these inconsistencies and unreliable evaluations in various steps of LLM evaluation. Based on our critical review, we present our perspectives and recommendations to ensure LLM evaluations are reproducible, reliable, and robust.
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Submitted 3 October, 2024; v1 submitted 4 July, 2024;
originally announced July 2024.
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Forensic Iris Image-Based Post-Mortem Interval Estimation
Authors:
Rasel Ahmed Bhuiyan,
Adam Czajka
Abstract:
Post-mortem iris recognition is an emerging application of iris-based human identification in a forensic setup. One factor that may be useful in conditioning iris recognition methods is the tissue decomposition level, which is correlated with the post-mortem interval (PMI), \ie the number of hours that have elapsed since death. PMI, however, is not always available, and its precise estimation rema…
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Post-mortem iris recognition is an emerging application of iris-based human identification in a forensic setup. One factor that may be useful in conditioning iris recognition methods is the tissue decomposition level, which is correlated with the post-mortem interval (PMI), \ie the number of hours that have elapsed since death. PMI, however, is not always available, and its precise estimation remains one of the core challenges in forensic examination. This paper presents the first known to us method of the PMI estimation directly from iris images captured after death. To assess the feasibility of the iris-based PMI estimation, we designed models predicting the PMI from (a) near-infrared (NIR), (b) visible (RGB), and (c) multispectral (RGB+NIR) forensic iris images. Models were evaluated following a 10-fold cross-validation, in (S1) sample-disjoint, (S2) subject-disjoint, and (S3) cross-dataset scenarios. We explore two data balancing techniques for S3: resampling-based balancing (S3-real), and synthetic data-supplemented balancing (S3-synthetic). We found that using the multispectral data offers a spectacularly low mean absolute error (MAE) of $\approx 3.5$ hours in the scenario (S1), a bit worse MAE $\approx 17.5$ hours in the scenario (S2), and MAE $\approx 45.77$ hours in the scenario (S3). Additionally, supplementing the training set with synthetically-generated forensic iris images (S3-synthetic) significantly enhances the models' ability to generalize to new NIR, RGB and multispectral data collected in a different lab. This suggests that if the environmental conditions are favorable (\eg, bodies are kept in low temperatures), forensic iris images provide features that are indicative of the PMI and can be automatically estimated.
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Submitted 13 November, 2024; v1 submitted 15 April, 2024;
originally announced April 2024.
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Utilizing BERT for Information Retrieval: Survey, Applications, Resources, and Challenges
Authors:
Jiajia Wang,
Jimmy X. Huang,
Xinhui Tu,
Junmei Wang,
Angela J. Huang,
Md Tahmid Rahman Laskar,
Amran Bhuiyan
Abstract:
Recent years have witnessed a substantial increase in the use of deep learning to solve various natural language processing (NLP) problems. Early deep learning models were constrained by their sequential or unidirectional nature, such that they struggled to capture the contextual relationships across text inputs. The introduction of bidirectional encoder representations from transformers (BERT) le…
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Recent years have witnessed a substantial increase in the use of deep learning to solve various natural language processing (NLP) problems. Early deep learning models were constrained by their sequential or unidirectional nature, such that they struggled to capture the contextual relationships across text inputs. The introduction of bidirectional encoder representations from transformers (BERT) leads to a robust encoder for the transformer model that can understand the broader context and deliver state-of-the-art performance across various NLP tasks. This has inspired researchers and practitioners to apply BERT to practical problems, such as information retrieval (IR). A survey that focuses on a comprehensive analysis of prevalent approaches that apply pretrained transformer encoders like BERT to IR can thus be useful for academia and the industry. In light of this, we revisit a variety of BERT-based methods in this survey, cover a wide range of techniques of IR, and group them into six high-level categories: (i) handling long documents, (ii) integrating semantic information, (iii) balancing effectiveness and efficiency, (iv) predicting the weights of terms, (v) query expansion, and (vi) document expansion. We also provide links to resources, including datasets and toolkits, for BERT-based IR systems. A key highlight of our survey is the comparison between BERT's encoder-based models and the latest generative Large Language Models (LLMs), such as ChatGPT, which rely on decoders. Despite the popularity of LLMs, we find that for specific tasks, finely tuned BERT encoders still outperform, and at a lower deployment cost. Finally, we summarize the comprehensive outcomes of the survey and suggest directions for future research in the area.
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Submitted 18 February, 2024;
originally announced March 2024.
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Design of a W-band High-PAE Class A&AB Power Amplifier in 150nm GaAs Technology
Authors:
Jun Yan Leea,
Duo Wu,
Xuanrui Guoc,
Mohammad Mahdi Ariannejad,
Mohammad Arif Sobhan Bhuiyan,
Mahdi H. Miraz
Abstract:
Nanometer scale power amplifiers (PA) at sub-THz suffer from severe parasitic effects that lead to experience limited maximum frequency and reduced power performance at the device transceiver front end. The integrated circuits researchers proposed different PA design architecture combinations at scaled down technologies to overcome these limitations. Although the designs meet the minimum requireme…
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Nanometer scale power amplifiers (PA) at sub-THz suffer from severe parasitic effects that lead to experience limited maximum frequency and reduced power performance at the device transceiver front end. The integrated circuits researchers proposed different PA design architecture combinations at scaled down technologies to overcome these limitations. Although the designs meet the minimum requirements, the power added efficiency (PAE) of PA is still quite low. In this paper, a W-band single-ended common-source (CS) and cascode integrated 3-stage 2-way PA design is proposed. The design integrated different key design methodologies to mitigate the parasitic; such as combined Class AB and Class A stages for gain-boosting and efficiency enhancement, Wilkinson power combiner for higher output power, linearity, and bandwidth, and transmission line (TL)-based wide band matching network for better inter-stage matching and compact size. The proposed PA design is validated using UMS 150-nm GaAs pHEMT using advanced design system (ADS) simulator. The results show that the proposed PA achieved a gain of 20.1 dB, an output power of 17.2 dBm, a PAE of 33 % and a 21 GHz bandwidth at 90 GHz Sub-THz band. The PA layout consumes only 5.66 X 2.51 mm2 die space including pads. Our proposed PA design will boost the research on sub-THz integrated circuits research and will smooth the wide spread adoption of 6G in near future.
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Submitted 10 February, 2024;
originally announced February 2024.
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ECGformer: Leveraging transformer for ECG heartbeat arrhythmia classification
Authors:
Taymaz Akan,
Sait Alp,
Mohammad Alfrad Nobel Bhuiyan
Abstract:
An arrhythmia, also known as a dysrhythmia, refers to an irregular heartbeat. There are various types of arrhythmias that can originate from different areas of the heart, resulting in either a rapid, slow, or irregular heartbeat. An electrocardiogram (ECG) is a vital diagnostic tool used to detect heart irregularities and abnormalities, allowing experts to analyze the heart's electrical signals to…
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An arrhythmia, also known as a dysrhythmia, refers to an irregular heartbeat. There are various types of arrhythmias that can originate from different areas of the heart, resulting in either a rapid, slow, or irregular heartbeat. An electrocardiogram (ECG) is a vital diagnostic tool used to detect heart irregularities and abnormalities, allowing experts to analyze the heart's electrical signals to identify intricate patterns and deviations from the norm. Over the past few decades, numerous studies have been conducted to develop automated methods for classifying heartbeats based on ECG data. In recent years, deep learning has demonstrated exceptional capabilities in tackling various medical challenges, particularly with transformers as a model architecture for sequence processing. By leveraging the transformers, we developed the ECGformer model for the classification of various arrhythmias present in electrocardiogram data. We assessed the suggested approach using the MIT-BIH and PTB datasets. ECG heartbeat arrhythmia classification results show that the proposed method is highly effective.
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Submitted 6 January, 2024;
originally announced January 2024.
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Optimisation and Performance Computation of a Phase Frequency Detector Module for IoT Devices
Authors:
Md. Shahriar Khan Hemel,
Mamun Bin Ibne Reaz,
Sawal Hamid Bin Md Ali,
Mohammad Arif Sobhan Bhuiyan,
Mahdi H. Miraz
Abstract:
The Internet of Things (IoT) is pivotal in transforming the way we live and interact with our surroundings. To cope with the advancement in technologies, it is vital to acquire accuracy with the speed. A phase frequency detector (PFD) is a critical device to regulate and provide accurate frequency in IoT devices. Designing a PFD poses challenges in achieving precise phase detection, minimising dea…
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The Internet of Things (IoT) is pivotal in transforming the way we live and interact with our surroundings. To cope with the advancement in technologies, it is vital to acquire accuracy with the speed. A phase frequency detector (PFD) is a critical device to regulate and provide accurate frequency in IoT devices. Designing a PFD poses challenges in achieving precise phase detection, minimising dead zones, optimising power consumption, and ensuring robust performance across various operational frequencies, necessitating complex engineering and innovative solutions. This study delves into optimising a PFD circuit, designed using 90 nm standard CMOS technology, aiming to achieve superior operational frequencies. An efficient and high-frequency PFD design is crafted and analysed using cadence virtuoso. The study focused on investigating the impact of optimising PFD design. With the optimised PFD, an operational frequency of 5 GHz has been achieved, along with a power consumption of only 29 μW. The dead zone of the PFD was only 25 ps.
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Submitted 6 January, 2024;
originally announced January 2024.
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Forensic Iris Image Synthesis
Authors:
Rasel Ahmed Bhuiyan,
Adam Czajka
Abstract:
Post-mortem iris recognition is an emerging application of iris-based human identification in a forensic setup, able to correctly identify deceased subjects even three weeks post-mortem. This technique thus is considered as an important component of future forensic toolkits. The current advancements in this field are seriously slowed down by exceptionally difficult data collection, which can happe…
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Post-mortem iris recognition is an emerging application of iris-based human identification in a forensic setup, able to correctly identify deceased subjects even three weeks post-mortem. This technique thus is considered as an important component of future forensic toolkits. The current advancements in this field are seriously slowed down by exceptionally difficult data collection, which can happen in mortuary conditions, at crime scenes, or in ``body farm'' facilities. This paper makes a novel contribution to facilitate progress in post-mortem iris recognition by offering a conditional StyleGAN-based iris synthesis model, trained on the largest-available dataset of post-mortem iris samples acquired from more than 350 subjects, generating -- through appropriate exploration of StyleGAN latent space -- multiple within-class (same identity) and between-class (different new identities) post-mortem iris images, compliant with ISO/IEC 29794-6, and with decomposition deformations controlled by the requested PMI (post mortem interval). Besides an obvious application to enhance the existing, very sparse, post-mortem iris datasets to advance -- among others -- iris presentation attack endeavors, we anticipate it may be useful to generate samples that would expose professional forensic human examiners to never-seen-before deformations for various PMIs, increasing their training effectiveness. The source codes and model weights are made available with the paper.
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Submitted 7 December, 2023;
originally announced December 2023.
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Effect of Triangular Pre-Cracks on the Mechanical Behavior of 2D MoTe$_2$: A Molecular Dynamics Study
Authors:
Md. Jobayer Aziz,
Md Akibul Islam,
Md. Rezwanul Karim,
Arafat Ahmed Bhuiyan
Abstract:
Among two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) stand out for their remarkable electronic, optical, and chemical properties. In addition to being variable bandgap semiconductor materials, the atomic thinness provides flexibility to TMDs. Therefore, understanding the physical properties of TMDs for applications in flexible and wearable devices is crucial. Despite the g…
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Among two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) stand out for their remarkable electronic, optical, and chemical properties. In addition to being variable bandgap semiconductor materials, the atomic thinness provides flexibility to TMDs. Therefore, understanding the physical properties of TMDs for applications in flexible and wearable devices is crucial. Despite the growing enthusiasm surrounding two-dimensional transition metal dichalcogenides (TMDs), our understanding of the mechanical characteristics of molybdenum ditelluride (MoTe$_2$) remains limited. The mechanical properties of MoTe$_2$ deteriorate in the presence of pre-existing cracks or vacancy defects, which are very common in grown TMDs. In this study, the fracture properties and crack propagation of monolayer molybdenum ditelluride (MoTe$_2$) sheets containing pre-existing triangular cracks with various vertex angles are investigated by performing molecular dynamics (MD) simulations of uniaxial and biaxial tensile loading. Due to pre-crack length, angle, and perimeter variations, monolayer MoTe$_2$ with pre-existing cracks underwent considerable changes in Young's modulus, tensile strength, fracture toughness, and fracture strain values. We have found that the pre-cracked MoTe$_2$ is more brittle than its pristine counterpart. Regulated alteration of pre-crack angle under constant simulation conditions improved the uniaxial mechanical properties. Similarly, regulated alteration of the perimeter of the pre-crack resulted in improved biaxial mechanical properties. This study contributes to the foundational knowledge for advanced design strategies involving strain engineering in MoTe$_2$ and other similar transition metal dichalcogenides.
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Submitted 2 October, 2023;
originally announced October 2023.
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A Systematic Study and Comprehensive Evaluation of ChatGPT on Benchmark Datasets
Authors:
Md Tahmid Rahman Laskar,
M Saiful Bari,
Mizanur Rahman,
Md Amran Hossen Bhuiyan,
Shafiq Joty,
Jimmy Xiangji Huang
Abstract:
The development of large language models (LLMs) such as ChatGPT has brought a lot of attention recently. However, their evaluation in the benchmark academic datasets remains under-explored due to the difficulty of evaluating the generative outputs produced by this model against the ground truth. In this paper, we aim to present a thorough evaluation of ChatGPT's performance on diverse academic dat…
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The development of large language models (LLMs) such as ChatGPT has brought a lot of attention recently. However, their evaluation in the benchmark academic datasets remains under-explored due to the difficulty of evaluating the generative outputs produced by this model against the ground truth. In this paper, we aim to present a thorough evaluation of ChatGPT's performance on diverse academic datasets, covering tasks like question-answering, text summarization, code generation, commonsense reasoning, mathematical problem-solving, machine translation, bias detection, and ethical considerations. Specifically, we evaluate ChatGPT across 140 tasks and analyze 255K responses it generates in these datasets. This makes our work the largest evaluation of ChatGPT in NLP benchmarks. In short, our study aims to validate the strengths and weaknesses of ChatGPT in various tasks and provide insights for future research using LLMs. We also report a new emergent ability to follow multi-query instructions that we mostly found in ChatGPT and other instruction-tuned models. Our extensive evaluation shows that even though ChatGPT is capable of performing a wide variety of tasks, and may obtain impressive performance in several benchmark datasets, it is still far from achieving the ability to reliably solve many challenging tasks. By providing a thorough assessment of ChatGPT's performance across diverse NLP tasks, this paper sets the stage for a targeted deployment of ChatGPT-like LLMs in real-world applications.
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Submitted 5 July, 2023; v1 submitted 29 May, 2023;
originally announced May 2023.
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Sub-100 nm β-Ga2O3 MOSFET with 55 GHz fMAX and >100 V breakdown
Authors:
Chinmoy Nath Saha,
Abhishek Vaidya,
A F M Anhar Uddin Bhuiyan,
Lingyu Meng,
Hongping Zhao,
Uttam Singisetti
Abstract:
This letter reports a highly scaled 90 nm gate length beta-Ga2O3 T-gate MOSFET with no current collapse and record power gain cut off frequency (fMAX). The epitaxial stack of 60 nm thin channel MOSFET was grown by Molecular Beam Epitaxy (MBE) and highly doped (n++) contact regrowth was carried out by Metal Organic Chemical Vapour Deposition (MOCVD) in the source/drain region. Maximum on current (I…
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This letter reports a highly scaled 90 nm gate length beta-Ga2O3 T-gate MOSFET with no current collapse and record power gain cut off frequency (fMAX). The epitaxial stack of 60 nm thin channel MOSFET was grown by Molecular Beam Epitaxy (MBE) and highly doped (n++) contact regrowth was carried out by Metal Organic Chemical Vapour Deposition (MOCVD) in the source/drain region. Maximum on current (IDS, MAX) of 160 mA/mm and transconductance (gm) around 36 mS/mm was measured at VDS= 10 V for LSD= 1.5 micrometer channel length. Transconductance is limited by higher channel sheet resistance (Rsheet). We observed no current collapse for both drain and gate lag measurement even at higher VDG,Q quiescent bias points. This is the first report of Ga2O3 FET showing no current collapse without any external passivation. Breakdown voltage around 125 V was reported for LGD= 1.2 micrometer. We extracted 27 GHz current gain cut off frequency (fT) and 55 GHz fMAX for 20 V drain bias. fMAX value mentioned here is the highest for Ga2O3 and the first demonstration of 55 GHz operation. fT. VBR product of 3.375 THz.V has been calculated which is comparable with state-of-art GaN HEMT. This letter suggests that Ga2O3 can be a suitable candidate for X-band application.
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Submitted 14 November, 2023; v1 submitted 8 May, 2023;
originally announced May 2023.
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Electrical Characteristics of in situ Mg-doped beta-Ga2O3 Current-Blocking Layer for Vertical Devices
Authors:
Sudipto Saha,
Lingyu Meng,
A F M Anhar Uddin Bhuiyan,
Ankit Sharma,
Chinmoy Nath Saha,
Hongping Zhao,
Uttam Singisetti
Abstract:
The lack of p-type doping has impeded the development of vertical gallium oxide (Ga2O3) devices. Current blocking layers (CBL) using implanted deep acceptors has been used to demonstrate vertical devices. This paper presents the first demonstration of in situ Mg-doped beta-Ga2O3 CBLs grown using metalorganic chemical vapor deposition. Device structures were designed with in-situ Mg doped layers wi…
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The lack of p-type doping has impeded the development of vertical gallium oxide (Ga2O3) devices. Current blocking layers (CBL) using implanted deep acceptors has been used to demonstrate vertical devices. This paper presents the first demonstration of in situ Mg-doped beta-Ga2O3 CBLs grown using metalorganic chemical vapor deposition. Device structures were designed with in-situ Mg doped layers with varied targeted Mg doping concentrations, which were calibrated by quantitative secondary ion mass spectroscopy (SIMS). The effectiveness of the CBL is characterized using temperature dependent current-voltage measurements using n-Mg-doped-n structures, providing crucial insight into the underlying mechanisms. To further validate the experimental results, a TCAD simulation is performed and the electrically active effective doping is found to be dependent on the Mg-doping density, offering a new perspective on the optimization of CBL performance. Breakdown measurements show a 3.4 MV/cm field strength. This study represents a significant step forward in the development of Ga2O3-based devices and paves the way for future advancements in this exciting field.
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Submitted 12 April, 2023;
originally announced April 2023.
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Metalorganic Chemical Vapor Deposition of \b{eta}-(AlxGa1-x)2O3 thin films on (001) \b{eta}-Ga2O3 substrates
Authors:
A. F. M. Anhar Uddin Bhuiyan,
Lingyu Meng,
Hsien-Lien Huang,
Jith Sarker,
Chris Chae,
Baishakhi Mazumder,
Jinwoo Hwang,
Hongping Zhao
Abstract:
Phase pure \b{eta}-(AlxGa1-x)2O3 thin films are grown on (001) oriented \b{eta}-Ga2O3 substrates via metalorganic chemical vapor deposition (MOCVD). By systematically tuning the precursor molar flow rates, the epitaxial growth of coherently strained \b{eta}-(AlxGa1-x)2O3 films are demonstrated with up to 25% Al compositions as evaluated by high resolution x-ray diffraction (XRD). The asymmetrical…
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Phase pure \b{eta}-(AlxGa1-x)2O3 thin films are grown on (001) oriented \b{eta}-Ga2O3 substrates via metalorganic chemical vapor deposition (MOCVD). By systematically tuning the precursor molar flow rates, the epitaxial growth of coherently strained \b{eta}-(AlxGa1-x)2O3 films are demonstrated with up to 25% Al compositions as evaluated by high resolution x-ray diffraction (XRD). The asymmetrical reciprocal space mapping confirms the growth of coherent \b{eta}-(AlxGa1-x)2O3 films (x < 25%) on (001) \b{eta}-Ga2O3 substrates. While the films show smooth surface morphologies, the alloy inhomogeneity with local segregation of Al along (-201) plane is observed from atomic resolution STEM imaging, resulting in wavy and inhomogeneous interfaces in \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 superlattice structure. Room temperature Raman spectra of \b{eta}-(AlxGa1-x)2O3 films show similar characteristics peaks as (001) \b{eta}-Ga2O3 substrate without obvious Raman shifts for films with different Al compositions. Atom probe tomography (APT) was used to investigate the atomic level structural chemistry with increasing Al content in the \b{eta}-(AlxGa1-x)2O3 films. A monotonous increase in chemical heterogeneity is observed from the in-plane Al/Ga distributions which was further confirmed via statistical frequency distribution analysis (FDA). Although the films exhibit alloy fluctuations, n-type doping with good electrical properties are demonstrated for films with various Al compositions. The determined valence and conduction band offsets at \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 heterojunctions using x-ray photoelectron spectroscopy (XPS) reveal the formation of type-II (staggered) band alignment.
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Submitted 11 January, 2025; v1 submitted 25 January, 2023;
originally announced January 2023.
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Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field
Authors:
Chinmoy Nath Saha,
Abhishek Vaidya,
A F M Anhar Uddin Bhuiyan,
Lingyu Meng,
Hongping Zhao,
Uttam Singisetti
Abstract:
This letter reports high-performance $\mathrmβ Ga2O3 thin channel MOSFETs with T-gate and degenerately doped source/drain contacts regrown by MOCVD. Gate length scaling (LG= 160-200 nm) leads to a peak drain current (ID,MAX) of 285 mA/mm and peak trans-conductance (gm) of 52 mS/mm at 10 V drain bias with 23.5 Ohm mm on resistance (Ron). A low metal/n+ contact resistance of 0.078 Ohm mm was extract…
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This letter reports high-performance $\mathrmβ Ga2O3 thin channel MOSFETs with T-gate and degenerately doped source/drain contacts regrown by MOCVD. Gate length scaling (LG= 160-200 nm) leads to a peak drain current (ID,MAX) of 285 mA/mm and peak trans-conductance (gm) of 52 mS/mm at 10 V drain bias with 23.5 Ohm mm on resistance (Ron). A low metal/n+ contact resistance of 0.078 Ohm mm was extracted from TLM measurement. Ron is dominated by interface resistance between channel and regrown layer. A gate-to-drain breakdown voltage of 192 V is measured for LGD = 355 nm resulting in average breakdown field (E_AVG) of 5.4 MV/cm. This E_AVG is the highest reported among all sub-micron gate length lateral FETs. RF measurements on 200 nm Silicon Nitride (Si3N4) passivated device shows a current gain cut off frequency (f_T) of 11 GHz and record power gain cut off frequency (f_MAX) of 48 GHz. The f_T.V_Br product is 2.11 THz.V for 192 V breakdown voltage. The switching figure of merit exceeds that of silicon and is comparable to mature wide-band gap devices.
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Submitted 2 November, 2022;
originally announced November 2022.
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TiN-GST-TiN All-Optical Reflection Modulator for 2 $μ$m Waveband Reaching 85% Efficiency
Authors:
Md Asif Hossain Bhuiyan,
Shamima Akter Mitu,
Sajid Muhaimin Choudhury
Abstract:
In this study, we present an all-optical reflection modulator for 2$μ$m communication band exploiting a nano-gear-array metasurface and a phase-change-material Ge$_2$Sb$_2$Te$_5$ (GST). The reflectance of the structure can be manipulated by altering the phase of GST by employing optical stimuli. The paper shows details on the optical and opto-thermal modeling techniques of GST. Numerical investiga…
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In this study, we present an all-optical reflection modulator for 2$μ$m communication band exploiting a nano-gear-array metasurface and a phase-change-material Ge$_2$Sb$_2$Te$_5$ (GST). The reflectance of the structure can be manipulated by altering the phase of GST by employing optical stimuli. The paper shows details on the optical and opto-thermal modeling techniques of GST. Numerical investigation reveals that the metastructure exhibits a conspicuous changeover from $\sim$ 99% absorption to very poor interaction with the operating light depending on the switching states of the GST, ending up with 85\% modulation depth and only 0.58 dB insertion loss. Due to noticeable differences in optical responses, we can demonstrate a high extinction ratio of 28 dB and a commendable FOM of 49, so far the best modulation performance in this wavelength window. In addition, real-time tracking of the reflectance during phase transition manifests high-speed switching expending low energy per cycle, on the order of sub-nJ. Hence, given its overall performance, the device will be a paradigm for the optical modulators for upcoming 2 $μ$m communication technology.
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Submitted 30 October, 2022;
originally announced October 2022.
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In-situ MOCVD Growth and Band Offsets of Al$_2$O$_3$ Dielectric on $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ thin films
Authors:
A F M Anhar Uddin Bhuiyan,
Lingyu Meng,
Hsien-Lien Huang,
Jinwoo Hwang,
Hongping Zhao
Abstract:
The in-situ metalorganic chemical vapor deposition (MOCVD) growth of Al$_2$O$_3$ dielectrics on $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ films is investigated as a function of crystal orientations and Al compositions of $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ films. The interface and film qualities of Al$_2$O$_3$ dielectrics are evaluated by high resolution X-ray diffraction (HR-XRD) and scanni…
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The in-situ metalorganic chemical vapor deposition (MOCVD) growth of Al$_2$O$_3$ dielectrics on $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ films is investigated as a function of crystal orientations and Al compositions of $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ films. The interface and film qualities of Al$_2$O$_3$ dielectrics are evaluated by high resolution X-ray diffraction (HR-XRD) and scanning transmission electron microscopy (HR-STEM) imaging, which indicate the growth of high quality amorphous Al$_2$O$_3$ dielectrics with abrupt interfaces on (010), (100) and (-201) oriented $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ films. The surface stoichiometries of Al$_2$O$_3$ deposited on all orientations of $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ are found to be well maintained with a bandgap energy of 6.91 eV as evaluated by high resolution x-ray photoelectron spectroscopy, which is consistent with the atomic layer deposited (ALD) Al$_2$O$_3$ dielectrics. The evolution of band offsets at both in-situ MOCVD and ex-situ ALD deposited Al$_2$O$_3$/$β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ are determined as a function of Al composition, indicating the influence of the deposition method, orientation, and Al composition of $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ films on resulting band alignments. Type II band alignments are determined at the MOCVD grown Al$_2$O$_3$/$β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ interfaces for (010) and (100) orientations, whereas type I band alignments with relatively lower conduction band offsets are observed along (-201) orientation. Results from this work revealed that the in-situ MOCVD deposited high quality Al$_2$O$_3$ dielectrics with sharp interfaces can be considered as a viable alternative of commonly used ex-situ deposited (ALD) Al$_2$O$_3$ for developing high performance $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ based devices.
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Submitted 11 January, 2025; v1 submitted 26 July, 2022;
originally announced July 2022.
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MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates
Authors:
A F M Anhar Uddin Bhuiyan,
Zixuan Feng,
Hsien-Lien Huang,
Lingyu Meng,
Jinwoo Hwang,
Hongping Zhao
Abstract:
Epitaxial growth of \k{appa}-phase Ga2O3 thin films are investigated on c-plane sapphire, GaN- and AlNon-sapphire, and (100) oriented yttria stabilized zirconia (YSZ) substrates via metalorganic chemical vapor deposition (MOCVD). The structural and surface morphological properties are investigated by comprehensive material characterization. Phase pure \k{appa}-Ga2O3 films are successfully grown on…
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Epitaxial growth of \k{appa}-phase Ga2O3 thin films are investigated on c-plane sapphire, GaN- and AlNon-sapphire, and (100) oriented yttria stabilized zirconia (YSZ) substrates via metalorganic chemical vapor deposition (MOCVD). The structural and surface morphological properties are investigated by comprehensive material characterization. Phase pure \k{appa}-Ga2O3 films are successfully grown on GaN-, AlN-on sapphire, and YSZ substrates through a systematical tuning of the growth parameters including the precursor molar flow rates, chamber pressure and growth temperature, whereas the growth on c-sapphire substrates leads to a mixture of \b{eta}- and \k{appa}polymorphs of Ga2O3 under the investigated growth conditions. The influence of the crystalline structure, surface morphology and roughness of \k{appa}-Ga2O3 films grown on different substrates are investigated as a function of precursor flow rate. High resolution scanning transmission electron microscopy (HR-STEM) imaging of \k{appa}-Ga2O3 films reveals abrupt interfaces between the epitaxial film and the sapphire, GaN and YSZ substrates. The growth of single crystal orthorhombic \k{appa}Ga2O3 films is confirmed by analyzing the STEM nano-diffraction pattern. The chemical composition, surface stoichiometry, and the bandgap energies of \k{appa}-Ga2O3 thin films grown on different substrates are studied by high resolution x-ray photoelectron spectroscopy (XPS) measurements. The type-II (staggered) band alignments at three interfaces between \k{appa}-Ga2O3 and c-sapphire, AlN, and YSZ substrates are determined by XPS, with the exception of \k{appa}-Ga2O3/GaN interface, which shows type I (straddling) band alignment.
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Submitted 11 January, 2025; v1 submitted 25 July, 2022;
originally announced July 2022.
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Evaluating Performance of Machine Learning Models for Diabetic Sensorimotor Polyneuropathy Severity Classification using Biomechanical Signals during Gait
Authors:
Fahmida Haque,
Mamun Bin Ibne Reaz,
Muhammad Enamul Hoque Chowdhury,
Serkan Kiranyaz,
Mohamed Abdelmoniem,
Emadeddin Hussein,
Mohammed Shaat,
Sawal Hamid Md Ali,
Ahmad Ashrif A Bakar,
Geetika Srivastava,
Mohammad Arif Sobhan Bhuiyan,
Mohd Hadri Hafiz Mokhtar,
Edi Kurniawan
Abstract:
Diabetic sensorimotor polyneuropathy (DSPN) is one of the prevalent forms of neuropathy affected by diabetic patients that involves alterations in biomechanical changes in human gait. In literature, for the last 50 years, researchers are trying to observe the biomechanical changes due to DSPN by studying muscle electromyography (EMG), and ground reaction forces (GRF). However, the literature is co…
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Diabetic sensorimotor polyneuropathy (DSPN) is one of the prevalent forms of neuropathy affected by diabetic patients that involves alterations in biomechanical changes in human gait. In literature, for the last 50 years, researchers are trying to observe the biomechanical changes due to DSPN by studying muscle electromyography (EMG), and ground reaction forces (GRF). However, the literature is contradictory. In such a scenario, we are proposing to use Machine learning techniques to identify DSPN patients by using EMG, and GRF data. We have collected a dataset consists of three lower limb muscles EMG (tibialis anterior (TA), vastus lateralis (VL), gastrocnemius medialis (GM) and 3-dimensional GRF components (GRFx, GRFy, and GRFz). Raw EMG and GRF signals were preprocessed, and a newly proposed feature extraction technique scheme from literature was applied to extract the best features from the signals. The extracted feature list was ranked using Relief feature ranking techniques, and highly correlated features were removed. We have trained different ML models to find out the best-performing model and optimized that model. We trained the optimized ML models for different combinations of muscles and GRF components features, and the performance matrix was evaluated. This study has found ensemble classifier model was performing in identifying DSPN Severity, and we optimized it before training. For EMG analysis, we have found the best accuracy of 92.89% using the Top 14 features for features from GL, VL and TA muscles combined. In the GRF analysis, the model showed 94.78% accuracy by using the Top 15 features for the feature combinations extracted from GRFx, GRFy and GRFz signals. The performance of ML-based DSPN severity classification models, improved significantly, indicating their reliability in DSPN severity classification, for biomechanical data.
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Submitted 21 May, 2022;
originally announced May 2022.
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Myoelectric Pattern Recognition Performance Enhancement Using Nonlinear Features
Authors:
Md. Johirul Islam,
Shamim Ahmad,
Fahmida Haque,
Mamun Bin Ibne Reaz,
Mohammad A. S. Bhuiyan,
Md. Rezaul Islam
Abstract:
The multichannel electrode array used for electromyogram (EMG) pattern recognition provides good performance, but it has a high cost, is computationally expensive, and is inconvenient to wear. Therefore, researchers try to use as few channels as possible while maintaining improved pattern recognition performance. However, minimizing the number of channels affects the performance due to the least s…
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The multichannel electrode array used for electromyogram (EMG) pattern recognition provides good performance, but it has a high cost, is computationally expensive, and is inconvenient to wear. Therefore, researchers try to use as few channels as possible while maintaining improved pattern recognition performance. However, minimizing the number of channels affects the performance due to the least separable margin among the movements possessing weak signal strengths. To meet these challenges, two time-domain features based on nonlinear scaling, the log of the mean absolute value (LMAV) and the nonlinear scaled value (NSV), are proposed. In this study, we validate the proposed features on two datasets, existing four feature extraction methods, variable window size and various signal to noise ratios (SNR). In addition, we also propose a feature extraction method where the LMAV and NSV are grouped with the existing 11 time-domain features. The proposed feature extraction method enhances accuracy, sensitivity, specificity, precision, and F1 score by 1.00%, 5.01%, 0.55%, 4.71%, and 5.06% for dataset 1, and 1.18%, 5.90%, 0.66%, 5.63%, and 6.04% for dataset 2, respectively. Therefore, the experimental results strongly suggest the proposed feature extraction method, for taking a step forward with regard to improved myoelectric pattern recognition performance.
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Submitted 28 March, 2022;
originally announced March 2022.
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The bound-state solutions of the one-dimensional pseudoharmonic oscillator
Authors:
Rufus Boyack,
Asadullah Bhuiyan,
Aneca Su,
Frank Marsiglio
Abstract:
We study the bound states of a quantum mechanical system consisting of a simple harmonic oscillator with an inverse square interaction, whose interaction strength is governed by a constant $α$. The singular form of this potential has doubly-degenerate bound states for $-1/4\leqα<0$ and $α>0$; since the potential is symmetric, these consist of even and odd-parity states. In addition we consider a r…
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We study the bound states of a quantum mechanical system consisting of a simple harmonic oscillator with an inverse square interaction, whose interaction strength is governed by a constant $α$. The singular form of this potential has doubly-degenerate bound states for $-1/4\leqα<0$ and $α>0$; since the potential is symmetric, these consist of even and odd-parity states. In addition we consider a regularized form of this potential with a constant cutoff near the origin. For this regularized potential, there are also even and odd-parity eigenfunctions for $α\geq-1/4$. For attractive potentials within the range $-1/4\leqα<0$, there is an even-parity ground state with increasingly negative energy and a probability density that approaches a Dirac delta function as the cutoff parameter becomes zero. These properties are analogous to a similar ground state present in the regularized one-dimensional hydrogen atom. We solve this problem both analytically and numerically, and show how the regularized excited states approach their unregularized counterparts.
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Submitted 24 November, 2021;
originally announced November 2021.
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Managing Innovation in Technical Education: Revisiting the Developmental Strategies of Politeknik Brunei
Authors:
Bashir Ahmed Bhuiyan,
Mohammad Shahansha Molla,
Masud Alam
Abstract:
The present study aims at exploring the strategies for managing innovation in technical education by using blended learning philosophy and practices with special reference to Politeknik Brunei. Based on literature review and desk research, the study found out salient characteristics, explored constraining factors, elicited strategies of Politeknik Brunei, and suggested some options and a framework…
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The present study aims at exploring the strategies for managing innovation in technical education by using blended learning philosophy and practices with special reference to Politeknik Brunei. Based on literature review and desk research, the study found out salient characteristics, explored constraining factors, elicited strategies of Politeknik Brunei, and suggested some options and a framework for innovations management and development of effective blended teaching and learning. The limiting factors identified are the unwillingness of the top-level management, lack of structural support, dearth of readiness of the stakeholders, the gap between teacher's expectations and changed students characteristics, and blended teaching myopia on the way of effective application of blended learning strategies. Notable suggestions for strategic development are developing wide-angle vision and self-renewal processes, analyzing the environment for needs determination. Clarity of purpose and tasks, technological adaptability, data-driven decision making, prompt feedback, flipped classroom, and development of learning clusters are other dimensions that may go a long way toward innovating teaching-learning and the overall development of an academic institution. Finally, the study suggested important guidelines for applying the strategies and proposed framework for quality blended learning and managing innovations in technical education.
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Submitted 4 November, 2021;
originally announced November 2021.
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Design, Simulation and Feasibility Analysis of Bifacial Solar PV System in Marine Drive Road, Cox's Bazar
Authors:
Abdullah Al Mehadi,
Mirza Muntasir Nishat,
Fahim Faisal,
Ahmed Raza Hasan Bhuiyan,
Mohyeu Hussain,
Md Ashraful Hoque
Abstract:
This paper proposes a design and simulation based investigative analysis of a vertically mounted bifacial solar photovoltaic model in Marine Drive Road, Cox's Bazar. Cox's bazar is a famous tourist destination which seems to be a flexible site for implementing such energy harvesting system without affecting the nearby eco-system and solves the existing land shortage problem. Moreover, the infrastr…
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This paper proposes a design and simulation based investigative analysis of a vertically mounted bifacial solar photovoltaic model in Marine Drive Road, Cox's Bazar. Cox's bazar is a famous tourist destination which seems to be a flexible site for implementing such energy harvesting system without affecting the nearby eco-system and solves the existing land shortage problem. Moreover, the infrastructure will provide insulation to noise related problem faced by nearby residents, arising from traffic noises. A model road of 200 meters is reconnoitered for energy harvesting by solar power using three prominent software namely PVSOL, PVsyst, and SAM where a promising mean annual yield of 70492.9 kWh is obtained, and the bifacial gain is calculated to be 12.26%. In addition, a deviation analysis is performed among each of the software and it is found that PVSOL and PVsyst have shown less deviation. Furthermore, a comprehensive financial analysis shows total installation cost to be 84759.74$.
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Submitted 20 September, 2021;
originally announced September 2021.
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T Grating on Nano-Cavity Array based Refractive Index Sensor
Authors:
Yasir Fatha Abed,
Md Asif Hossain Bhuiyan,
Sajid Muhaimin Choudhury
Abstract:
We report a refractive index sensor comprising of unique T grating on top of periodic nano-cavities. The sensor has two resonant modes sensitive to different regions of the structure with low inter-region interference, hence allows simultaneous detection of two different analytes or more accurate detection of a single analyte. The sensor also provides a self-referencing feature for a broad range o…
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We report a refractive index sensor comprising of unique T grating on top of periodic nano-cavities. The sensor has two resonant modes sensitive to different regions of the structure with low inter-region interference, hence allows simultaneous detection of two different analytes or more accurate detection of a single analyte. The sensor also provides a self-referencing feature for a broad range of refractive index, from 1.3 to 1.5. Using the FDTD method, the sensitivities of 801.7 nm/RIU and 1386.8 nm/RIU have been recorded for the two modes respectively. The versatility of the structure makes the sensor a prominent candidate for biochemical and other sensing applications.
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Submitted 2 August, 2021; v1 submitted 20 May, 2021;
originally announced May 2021.
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FedMood: Federated Learning on Mobile Health Data for Mood Detection
Authors:
Xiaohang Xu,
Hao Peng,
Lichao Sun,
Md Zakirul Alam Bhuiyan,
Lianzhong Liu,
Lifang He
Abstract:
Depression is one of the most common mental illness problems, and the symptoms shown by patients are not consistent, making it difficult to diagnose in the process of clinical practice and pathological research. Although researchers hope that artificial intelligence can contribute to the diagnosis and treatment of depression, the traditional centralized machine learning needs to aggregate patient…
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Depression is one of the most common mental illness problems, and the symptoms shown by patients are not consistent, making it difficult to diagnose in the process of clinical practice and pathological research. Although researchers hope that artificial intelligence can contribute to the diagnosis and treatment of depression, the traditional centralized machine learning needs to aggregate patient data, and the data privacy of patients with mental illness needs to be strictly confidential, which hinders machine learning algorithms clinical application. To solve the problem of privacy of the medical history of patients with depression, we implement federated learning to analyze and diagnose depression. First, we propose a general multi-view federated learning framework using multi-source data, which can extend any traditional machine learning model to support federated learning across different institutions or parties. Secondly, we adopt late fusion methods to solve the problem of inconsistent time series of multi-view data. Finally, we compare the federated framework with other cooperative learning frameworks in performance and discuss the related results.
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Submitted 20 May, 2021; v1 submitted 6 February, 2021;
originally announced February 2021.
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Large-Size Free-Standing Single-crystal b-Ga2O3 Membranes Fabricated by Hydrogen Implantation and Lift-Off
Authors:
Yixiong Zheng,
Zixuan Feng,
A F M Anhar Uddin Bhuiyan,
Lingyu Meng,
Samyak Dhole,
Quanxi Jia,
Hongping Zhao,
Jung-Hun Seo
Abstract:
In this paper, we have demonstrated the large-size free-standing single-crystal b-Ga2O3 NMs fabricated by the hydrogen implantation and lift-off process directly from MOCVD grown b-Ga2O3 epifilms on native substrates. The optimum implantation conditions were simulated with a Monte-Carlo simulation to obtain the high hydrogen concentration with a narrow ion distribution at the desired depth. Two as…
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In this paper, we have demonstrated the large-size free-standing single-crystal b-Ga2O3 NMs fabricated by the hydrogen implantation and lift-off process directly from MOCVD grown b-Ga2O3 epifilms on native substrates. The optimum implantation conditions were simulated with a Monte-Carlo simulation to obtain the high hydrogen concentration with a narrow ion distribution at the desired depth. Two as grown b-Ga2O3 samples with different orientation ([100] and [001]) were used and successfully create 1.2 um thick b-Ga2O3 NMs without any physical damages. These b-Ga2O3 NMs were then transfer-printed onto rigid and flexible substrates such as SiC substrate and polyimide substrate. Various material characterizations were performed to investigate the crystal quality, surface morphology, optical property, mechanical property, and bandgap before and after the lift-off and revealed that good material quality is maintained. This result offers several benefits in that the thickness, doping, and size of b-Ga2O3 NMs can be fully controlled. Moreover, more advanced b-Ga2O3-based NM structures such as (AlxGa1-x)2O3/Ga2O3 heterostructure NMs can be directly created from their bulk epitaxy substrates thus this result provides a viable route for the realization of high performance b-Ga2O3 NM-based electronics and optoelectronics that can be built on various substrates and platforms.
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Submitted 11 February, 2021;
originally announced February 2021.
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AR-based Modern Healthcare: A Review
Authors:
Jinat Ara,
Hanif Bhuiyan,
Yeasin Arafat Bhuiyan,
Salma Begum Bhyan,
Muhammad Ismail Bhuiyan
Abstract:
The recent advances of Augmented Reality (AR) in healthcare have shown that technology is a significant part of the current healthcare system. In recent days, augmented reality has proposed numerous smart applications in healthcare domain including wearable access, telemedicine, remote surgery, diagnosis of medical reports, emergency medicine, etc. The aim of the developed augmented healthcare app…
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The recent advances of Augmented Reality (AR) in healthcare have shown that technology is a significant part of the current healthcare system. In recent days, augmented reality has proposed numerous smart applications in healthcare domain including wearable access, telemedicine, remote surgery, diagnosis of medical reports, emergency medicine, etc. The aim of the developed augmented healthcare application is to improve patient care, increase efficiency, and decrease costs. This article puts on an effort to review the advances in AR-based healthcare technologies and goes to peek into the strategies that are being taken to further this branch of technology. This article explores the important services of augmented-based healthcare solutions and throws light on recently invented ones as well as their respective platforms. It also addresses concurrent concerns and their relevant future challenges. In addition, this paper analyzes distinct AR security and privacy including security requirements and attack terminologies. Furthermore, this paper proposes a security model to minimize security risks. Augmented reality advantages in healthcare, especially for operating surgery, emergency diagnosis, and medical training is being demonstrated here thorough proper analysis. To say the least, the article illustrates a complete overview of augmented reality technology in the modern healthcare sector by demonstrating its impacts, advancements, current vulnerabilities; future challenges, and concludes with recommendations to a new direction for further research.
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Submitted 15 January, 2021;
originally announced January 2021.