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Magnetism, transport and atomic structure of amorphous binary YxCo1-x alloys
Authors:
Zexiang Hu,
Jean Besbas,
Katarzyna Siewierska,
Ross Smith,
Plamen Stamenov,
J. M. D. Coey
Abstract:
Sputtered thin films of binary YxCo1-x with 0 < x < 0.54 and thickness 15 nm are investigated to help understand the ferromagnetism of cobalt in amorphous rare-earth cobalt alloys. The magnetic moment per cobalt falls to zero at x0 = 0.50, where the appearance of magnetism is marked by a para-process with a dimensionless susceptibility of up to 0.015. All films are magnetically soft, with densitie…
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Sputtered thin films of binary YxCo1-x with 0 < x < 0.54 and thickness 15 nm are investigated to help understand the ferromagnetism of cobalt in amorphous rare-earth cobalt alloys. The magnetic moment per cobalt falls to zero at x0 = 0.50, where the appearance of magnetism is marked by a para-process with a dimensionless susceptibility of up to 0.015. All films are magnetically soft, with densities that fall between those of crystalline Y-Co intermetallic compounds and the density of a relaxed 10,000-atom binary random close-packed model of hard spheres with an Y:Co volume ratio of 3:1, where the packing fractions for all films lies in a narrow range around 0.633 and Co is coordinated by 3.2 Co and 3.2 Y atoms at x = 0.5. All films with x < 0.4 exhibit in-plane shape anisotropy that is about six times as great as an intrinsic perpendicular component. Average cobalt spin and orbital moments obtained by X-ray magnetic circular dichroism were 1.31 and 0.32 Bohr magnetons, respectively for amorphous Y0.25Co0.75. Strong local anisotropy is associated with the large cobalt orbital moment, but there is little influence of anisotropy on the ferromagnetic order because of exchange averaging. The Hall effect and magnetoresistance are modelled in terms of effective uniform rotation of the magnetization, with spontaneous and band contributions. Amorphous YxCo1-x is contrasted with amorphous YxFe1-x, which exhibits random noncollinear magnetic order that is very sensitive to the film density.
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Submitted 29 September, 2023;
originally announced September 2023.
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Au4Mn, a localized ferromagnet with strong spin-orbit coupling, long-range ferromagnetic exchange and high Curie temperature
Authors:
Yangkun He,
Zsolt Gercsi,
Rui Zhang,
Yu Kang,
Yurii Skourski,
Lucy Prendeville1,
Orrie Larmour,
Jean Besbas,
Claudia Felser,
Plamen Stamenov,
J. M. D. Coey
Abstract:
Metallic Mn-based alloys with a nearest-neighbor Mn-Mn distance greater than 0.4 nm exhibit large, well-localized magnetic moments. Here we investigate the magnetism of tetragonal Au4Mn with a Curie temperature of 385 K, where manganese has a spin moment of 4.1 muB and its orbital moment is quenched. Since 80% of the atoms are gold, the spin orbit interaction is strong and Au4Mn exhibits uniaxial…
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Metallic Mn-based alloys with a nearest-neighbor Mn-Mn distance greater than 0.4 nm exhibit large, well-localized magnetic moments. Here we investigate the magnetism of tetragonal Au4Mn with a Curie temperature of 385 K, where manganese has a spin moment of 4.1 muB and its orbital moment is quenched. Since 80% of the atoms are gold, the spin orbit interaction is strong and Au4Mn exhibits uniaxial magnetocrystalline anisotropy with surface maze domains at room temperature. The magnetic hardness parameter of 1.0 is sufficient to maintain the magnetization along the c-axis for a sample of any shape. Au also reduces the spin moment of Mn through 5d-3d orbital hybridization. An induced moment of 0.05 muB was found on Au under a pulsed field of 40 T. Density functional theory calculations indicate that the Mn-Mn exchange is mediated by spin-polarized gold 5d and 6p electrons. The distance-dependence shows that it is ferromagnetic or zero for the first ten shells of Mn neighbors out to 1.041 nm (64 atoms), and very weak and oscillatory thereafter.
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Submitted 25 October, 2022;
originally announced October 2022.
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Single-pulse all-optical switching in amorphous Dy$_x$Co$_{1-x}\text{ }$ and Tb$_x$Co$_{1-x}$
Authors:
Zexiang Hu,
Jean Besbas,
Ross Smith,
Niclas Teichert,
Gwenael Atcheson,
Karsten Rode,
Plamen Stamenov,
J. M. D. Coey
Abstract:
Repeated uniform switching of the magnetization of thin films of ferrimagnetic amorphous Gd$_{x}$(FeCo)$_{1-x}$ in response to single fast laser pulses is well established. Here we report unusual toggle switching in thin films of sperimagnetic amorphous Dy$_x$Co$_{1-x}$ and Tb$_x$Co$_{1-x}$ with $\it{x} \simeq$ 0.25 irradiated with single 200 fs pulses of 800 nm laser light. The samples have stron…
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Repeated uniform switching of the magnetization of thin films of ferrimagnetic amorphous Gd$_{x}$(FeCo)$_{1-x}$ in response to single fast laser pulses is well established. Here we report unusual toggle switching in thin films of sperimagnetic amorphous Dy$_x$Co$_{1-x}$ and Tb$_x$Co$_{1-x}$ with $\it{x} \simeq$ 0.25 irradiated with single 200 fs pulses of 800 nm laser light. The samples have strong local random anisotropy due to the non-S state rare earth. The compensation temperature of the films is $\le$ 180 K and their Curie temperature is $\simeq$ 500 K. They are mostly switched by the first pulse, and subsequent pulses lead to partial re-switching of a decreasing amount of the irradiated area, with a granular structure of submicron regions of switched and unswitched material. Individual switched domains about 700 nm in size are observed around the edge of the irradiated spots where the fluence is at the threshold for switching. Results are discussed in terms of a random anisotropy model where the ratio of local anisotropy to exchange is temperature dependent and close to the threshold for strong pinning.
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Submitted 29 November, 2021;
originally announced November 2021.
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Ultra-fast Double Pulse All-Optical Re-switching of a Ferrimagnet
Authors:
C. Banerjee,
K. Rode,
G. Atcheson,
S. Lenne,
P. Stamenov,
J. M. D. Coey,
J. Besbas
Abstract:
All-optical re-switching has been investigated in the half-metallic Heusler ferrimagnet Mn2Ru0.9Ga, where Mn atoms occupy two inequivalent sites in the XA-type structure. The effect of a second 200 fs 800 nm pump pulse that follows a first pulse, when both are above the threshold for switching, is studied as a function of t12, the time between them. The aims are to identify the physical mechanisms…
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All-optical re-switching has been investigated in the half-metallic Heusler ferrimagnet Mn2Ru0.9Ga, where Mn atoms occupy two inequivalent sites in the XA-type structure. The effect of a second 200 fs 800 nm pump pulse that follows a first pulse, when both are above the threshold for switching, is studied as a function of t12, the time between them. The aims are to identify the physical mechanisms involved and to determine the minimum time needed for re-switching. The time trajectory of the switching process on a plot of sublattice angular momentum, S4a vs S4c, is in three stages; When t < 0.1 ps, the sublattice moments are rapidly disordered, but not destroyed, while conserving net angular momentum via optical spin-wave excitations. This leads to transient parallel alignment of the residual Mn spins in the first quadrant. The net angular momentum associated with the majority sublattice then flips in about 2 ps, and a fully-reversed ferrimagnetic state is then established via the spin-lattice interaction, which allows re-switching provided t12 > 10 ps.
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Submitted 12 December, 2020;
originally announced December 2020.
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Magnetization dynamics of the compensated ferrimagnet $Mn_{2}Ru_{x}Ga$
Authors:
G. Bonfiglio,
K. Rode,
K. Siewerska,
J. Besbas,
G. Y. P. Atcheson,
P. Stamenov,
J. M. D. Coey,
A. V. Kimel,
Th. Rasing,
A. Kirilyuk
Abstract:
Here we study both static and time-resolved dynamic magnetic properties of the compensated ferrimagnet from room temperature down to 10K, thus crossing the magnetic compensation temperature $T_{M}$. The behaviour is analysed with a model of a simple collinear ferrimagnet with uniaxial anisotropy and site-specific gyromagnetic ratios. We find a maximum zero-applied-field resonance frequency of…
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Here we study both static and time-resolved dynamic magnetic properties of the compensated ferrimagnet from room temperature down to 10K, thus crossing the magnetic compensation temperature $T_{M}$. The behaviour is analysed with a model of a simple collinear ferrimagnet with uniaxial anisotropy and site-specific gyromagnetic ratios. We find a maximum zero-applied-field resonance frequency of $\sim$160GHz and a low intrinsic Gilbert damping $α$$\sim$0.02, making it a very attractive candidate for various spintronic applications.
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Submitted 19 September, 2019;
originally announced September 2019.
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Single pulse all-optical toggle switching of magnetization without Gd: The example of Mn2RuxGa
Authors:
C. Banerjee,
N. Teichert,
K. Siewierska,
Z. Gercsi,
G. Atcheson,
P. Stamenov,
K. Rode,
J. M. D. Coey,
J. Besbas
Abstract:
Energy-efficient control of magnetization without the help of a magnetic field is a key goal of spintronics. Purely heat-induced single-pulse all-optical toggle switching has been demonstrated, but so far only in Gd based amorphous ferrimagnet films. In this work, we demonstrate toggle switching in the half-metallic compensated ferrimagnetic Heusler alloys Mn2RuxGa, which have two crystallographic…
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Energy-efficient control of magnetization without the help of a magnetic field is a key goal of spintronics. Purely heat-induced single-pulse all-optical toggle switching has been demonstrated, but so far only in Gd based amorphous ferrimagnet films. In this work, we demonstrate toggle switching in the half-metallic compensated ferrimagnetic Heusler alloys Mn2RuxGa, which have two crystallographically-inequivalent Mn sublattices. Moreover, we observe the switching at room temperature in samples that are immune to external magnetic fields in excess of 1 T, provided they exhibit compensation above room temperature. Observations of the effect in compensated ferrimagnets without Gd challenges our understanding of all-optical switching. The dynamic behavior indicates that Mn2RuxGa switches in 2 ps or less. Our findings widen the basis for fast optical switching of magnetization and break new ground for engineered materials that can be used for nonvolatile ultrafast switches using ultrashort pulses of light.
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Submitted 17 April, 2020; v1 submitted 12 September, 2019;
originally announced September 2019.
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Direct visualization of current induced spin accumulation in topological insulators
Authors:
Yang Liu,
Jean Besbas,
Yi Wang,
Pan He,
Mengji Chen,
Dapeng Zhu,
Yang Wu,
Jong Min Lee,
Lan Wang,
Jisoo Moon,
Nikesh Koirala,
Seongshik Oh,
Hyunsoo Yang
Abstract:
Charge-to-spin conversion in various material systems is the key for the fundamental understanding of spin-orbitronis as well as the development of efficient means to manipulate the magnetization. We report the direct spatial imaging of current induced spin accumulation at the channel edges of Bi2Se3 and BiSbTeSe2 topological insulators by a scanning photovoltage microscope at room temperature. Th…
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Charge-to-spin conversion in various material systems is the key for the fundamental understanding of spin-orbitronis as well as the development of efficient means to manipulate the magnetization. We report the direct spatial imaging of current induced spin accumulation at the channel edges of Bi2Se3 and BiSbTeSe2 topological insulators by a scanning photovoltage microscope at room temperature. The spin polarization is along the out-of-plane direction with opposite signs for the two channel edges. The accumulated spin direction reverses sign upon changing the current direction and the detected spin signal shows a linear dependence on the magnitude of currents, which indicates that our observed phenomena are the current induced effects. The spin Hall angle of Bi2Se3 and BiSbTeSe2 is determined to be 0.0085 and 0.0616, respectively. We further image the current induced spin accumulation in a Pt heavy metal. Our results open up the possibility of optically detecting the current induced spin accumulations, and thus point towards a better understanding of the interaction between spins and circularly polarized light.
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Submitted 29 May, 2018;
originally announced May 2018.
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Room-temperature nanoseconds spin relaxation in WTe2 and MoTe2 thin films
Authors:
Qisheng Wang,
Jie Li,
Jean Besbas,
Chuang-Han Hsu,
Kaiming Cai,
Li Yang,
Shuai Cheng,
Yang Wu,
Wenfeng Zhang,
Kaiyou Wang,
Tay-Rong Chang,
Hsin Lin,
Haixin Chang,
Hyunsoo Yang
Abstract:
The Weyl semimetal WTe2 and MoTe2 show great potential in generating large spin currents since they possess topologically-protected spin-polarized states and can carry a very large current density. In addition, the intrinsic noncentrosymmetry of WTe2 and MoTe2 endows with a unique property of crystal symmetry-controlled spin-orbit torques. An important question to be answered for developing spintr…
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The Weyl semimetal WTe2 and MoTe2 show great potential in generating large spin currents since they possess topologically-protected spin-polarized states and can carry a very large current density. In addition, the intrinsic noncentrosymmetry of WTe2 and MoTe2 endows with a unique property of crystal symmetry-controlled spin-orbit torques. An important question to be answered for developing spintronic devices is how spins relax in WTe2 and MoTe2. Here, we report a room-temperature spin relaxation time of 1.2 ns (0.4 ns) in WTe2 (MoTe2) thin film using the time-resolved Kerr rotation (TRKR). Based on ab initio calculation, we identify a mechanism of long-lived spin polarization resulting from a large spin splitting around the bottom of the conduction band, low electron-hole recombination rate and suppression of backscattering required by time-reversal and lattice symmetry operation. In addition, we find the spin polarization is firmly pinned along the strong internal out-of-plane magnetic field induced by large spin splitting. Our work provides an insight into the physical origin of long-lived spin polarization in Weyl semimetals which could be useful to manipulate spins for a long time at room temperature.
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Submitted 1 March, 2018;
originally announced March 2018.
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Helicity dependent photovoltaic effect in Bi2Se3 under normal incident light
Authors:
Jean Besbas,
Karan Banerjee,
Jaesung Son,
Yi Wang,
Yang Wu,
Matthew Brahlek,
Nikesh Koirala,
Jisoo Moon,
Seongshik Oh,
Hyunsoo Yang
Abstract:
Topological insulators (TIs) form a new class of materials with insulating bulk and surface conduction ensured by topologically protected surface states (TPSS). We investigate the impact of the helicity of a normally incident laser beam on the photovoltaic effect in the TI Bi2Se3. The observation of a helicity dependent photovoltaic effect for normally incident light indicates the presence of out-…
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Topological insulators (TIs) form a new class of materials with insulating bulk and surface conduction ensured by topologically protected surface states (TPSS). We investigate the impact of the helicity of a normally incident laser beam on the photovoltaic effect in the TI Bi2Se3. The observation of a helicity dependent photovoltaic effect for normally incident light indicates the presence of out-of-plane spin components for some TPSSs due to the hexagonal warping. In addition, fluctuations in the electrostatic potential at the surface locally break the rotational symmetry of the film allowing the helicity dependent photovoltaic effect. Our result suggests that engineering local electrostatic potentials in Bi2Se3 would allow the control of optically generated spin currents, which may be useful for applications in spin-optoelectronics.
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Submitted 22 October, 2016;
originally announced October 2016.
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Spin orbit torques and Dzyaloshinskii-Moriya interaction in dual-interfaced Co-Ni multilayers
Authors:
Jiawei Yu,
Xuepeng Qiu,
Yang Wu,
Jungbum Yoon,
Praveen Deorani,
Jean Mourad Besbas,
Aurelien Manchon,
Hyunsoo Yang
Abstract:
We study the spin orbit torque (SOT) and Dzyaloshinskii-Moriya interaction (DMI) in the dual-interfaced Co-Ni perpendicular multilayers. Through the combination of top and bottom layer materials (Pt, Ta, MgO and Cu), SOT and DMI are efficiently manipulated due to an enhancement or cancellation of the top and bottom contributions. However, SOT is found to originate mostly from the bulk of a heavy m…
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We study the spin orbit torque (SOT) and Dzyaloshinskii-Moriya interaction (DMI) in the dual-interfaced Co-Ni perpendicular multilayers. Through the combination of top and bottom layer materials (Pt, Ta, MgO and Cu), SOT and DMI are efficiently manipulated due to an enhancement or cancellation of the top and bottom contributions. However, SOT is found to originate mostly from the bulk of a heavy metal (HM), while DMI is more of interfacial origin. In addition, we find that the direction of the domain wall (DW) motion can be either along or against the electron flow depending on the DW tilting angle when there is a large DMI. Such an abnormal DW motion induces a large assist field required for hysteretic magnetization reversal. Our results provide insight into the role of DMI in SOT driven magnetization switching, and demonstrate the feasibility of achieving desirable SOT and DMI for spintronic devices.
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Submitted 22 October, 2016;
originally announced October 2016.
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Biexciton, single carrier, and trion generation dynamics in single-walled carbon nanotubes
Authors:
Bertrand Yuma,
Stéphane Berciaud,
Jean Besbas,
Jonah Shaver,
Silvia M. Santos,
Saunab Gosh,
R. Bruce Weisman,
Laurent Cognet,
Mathieu Gallart,
Marc Ziegler,
Bernd Hönerlage,
Brahim Lounis,
Pierre Gilliot
Abstract:
We present a study of free carrier photo-generation and multi-carrier bound states, such as biexcitons and trions (ionized excitons), in semiconducting single-walled carbon nanotubes. Pump-and-probe measurements performed with fs pulses reveal the effects of strong Coulomb interactions between carriers on their dynamics. Biexciton formation by optical transition from exciton population results in…
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We present a study of free carrier photo-generation and multi-carrier bound states, such as biexcitons and trions (ionized excitons), in semiconducting single-walled carbon nanotubes. Pump-and-probe measurements performed with fs pulses reveal the effects of strong Coulomb interactions between carriers on their dynamics. Biexciton formation by optical transition from exciton population results in an induced absorption line (binding energy 130 meV). Exciton-exciton annihilation process is shown to evolve at high densities towards an Auger process that can expel carriers from nanotubes. The remaining carriers give rise to an induced absorption due to trion formation (binding energy 190 meV). These features show the dynamics of exciton and free carriers populations.
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Submitted 6 February, 2013;
originally announced February 2013.
