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Observation of Fundamental Limit of Light Localization
Authors:
Farbod Shafiei,
Massoud R. Masir,
Tommaso Orzali,
Alexey Vert,
Man Hoi Wong,
Gennadi Bersuker,
Michael C. Downer
Abstract:
In disordered media light can be localized in the spaces between scattering sites which average to an optical mean free path (MFP). However the fundamental question of the smallest MFP that can support Anderson localization of light remains unanswered due to fabrication complexity of a scattering medium with controlled nano-scale gaps and lack of required resolution by far-field methods. Here we u…
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In disordered media light can be localized in the spaces between scattering sites which average to an optical mean free path (MFP). However the fundamental question of the smallest MFP that can support Anderson localization of light remains unanswered due to fabrication complexity of a scattering medium with controlled nano-scale gaps and lack of required resolution by far-field methods. Here we use scanning probe microscopy technique to collect localized light created at gaps between scattering crystallographic defects in a large variety set of nano-gap III-V medium. No localized spots correlated to MFP below ~14.5 nm is observed at second-harmonic collection at 390 nm. Experiment and simulation resulted in the first direct observation of suppression of Anderson light localization correlated to ~13 nm optical MFP that reveals a fundamental constraint in electromagnetism and photonics.
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Submitted 2 December, 2022; v1 submitted 5 November, 2022;
originally announced November 2022.
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Atomic-Scale Defect Detection by Nonlinear Light Scattering and Localization
Authors:
Farbod Shafiei,
Tommaso Orzali,
Alexey Vert,
Mohammad-Ali Miri,
P. Y. Hung,
Man Hoi Wong,
Andrea Alù,
Gennadi Bersuker,
Michael C. Downer
Abstract:
Hetero-epitaxial crystalline films underlie many electronic and optical technologies but are prone to forming defects at their hetero-interfaces. Atomic-scale defects such as threading dislocations that propagate into a film impede the flow of charge carriers and light degrading electrical-optical performance of devices. Diagnosis of subsurface defects traditionally requires time consuming invasiv…
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Hetero-epitaxial crystalline films underlie many electronic and optical technologies but are prone to forming defects at their hetero-interfaces. Atomic-scale defects such as threading dislocations that propagate into a film impede the flow of charge carriers and light degrading electrical-optical performance of devices. Diagnosis of subsurface defects traditionally requires time consuming invasive techniques such as cross sectional transmission electron microscopy. Using III-V films grown on Si, we have demonstrated noninvasive, bench-top diagnosis of sub-surface defects by optical second-harmonic scanning probe microscope. We observed a high-contrast pattern of sub-wavelength hot spots caused by scattering and localization of fundamental light by defect scattering sites. Size of these observed hotspots are strongly correlated to the density of dislocation defects. Our results not only demonstrate a global and versatile method for diagnosing sub-surface scattering sites but uniquely elucidate optical properties of disordered media. An extension to third harmonics would enable irregularities detection in non-X(2) materials making the technique universally applicable.
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Submitted 2 August, 2020; v1 submitted 2 July, 2020;
originally announced July 2020.
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Intrinsic Reliability improvement in Biaxially Strained SiGe p-MOSFETs
Authors:
Shweta Deora,
Abhijeet Paul,
R. Bijesh,
Jeff Huang,
Gerhard Klimeck,
Gennadi Bersuker,
P. D. Krisch,
Raj Jammy
Abstract:
In this letter we not only show improvement in the performance but also in the reliability of 30nm thick biaxially strained SiGe (20%Ge) channel on Si p-MOSFETs. Compared to Si channel, strained SiGe channel allows larger hole mobility (μh) in the transport direction and alleviates charge flow towards the gate oxide. μh enhancement by 40% in SiGe and 100% in Si-cap SiGe is observed compared to the…
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In this letter we not only show improvement in the performance but also in the reliability of 30nm thick biaxially strained SiGe (20%Ge) channel on Si p-MOSFETs. Compared to Si channel, strained SiGe channel allows larger hole mobility (μh) in the transport direction and alleviates charge flow towards the gate oxide. μh enhancement by 40% in SiGe and 100% in Si-cap SiGe is observed compared to the Si hole universal mobility. A ~40% reduction in NBTI degradation, gate leakage and flicker noise (1/f) is observed which is attributed to a 4% increase in the hole-oxide barrier height (φ) in SiGe. Similar field acceleration factor (Γ) for threshold voltage shift (ΔVT) and increase in noise (ΔSVG) in Si and SiGe suggests identical degradation mechanisms.
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Submitted 13 December, 2010; v1 submitted 7 December, 2010;
originally announced December 2010.
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Negative oxygen vacancies in HfO$_2$ as charge traps in high-k stacks
Authors:
J. L. Gavartin,
D. Munoz Ramo,
A. L. Shluger,
G. Bersuker,
B. H. Lee
Abstract:
We calculated the optical excitation and thermal ionization energies of oxygen vacancies in m-HfO$_2$ using atomic basis sets, a non-local density functional and periodic supercell. The thermal ionization energies of negatively charged V$^-$ and V$^{2-}$ centres are consistent with values obtained by the electrical measurements. The results suggest that negative oxygen vacancies are the likely c…
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We calculated the optical excitation and thermal ionization energies of oxygen vacancies in m-HfO$_2$ using atomic basis sets, a non-local density functional and periodic supercell. The thermal ionization energies of negatively charged V$^-$ and V$^{2-}$ centres are consistent with values obtained by the electrical measurements. The results suggest that negative oxygen vacancies are the likely candidates for intrinsic electron traps in the hafnum-based gate stack devices.
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Submitted 24 May, 2006;
originally announced May 2006.
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The role of nitrogen related defects in high-k dielectric oxides: Density functional studies
Authors:
J. L. Gavartin,
A. S. Foster,
G. I. Bersuker,
A. L. Shluger
Abstract:
Using ab initio density functional total energy and molecular dynamics simulations, we study the effects of various forms of nitrogen post deposition anneal (PDA) on the electric properties of hafnia in the context of its application as a gate dielectric in field effect transistors (FET). We consider the atomic structure and energetics of nitrogen containing defects which can be formed during th…
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Using ab initio density functional total energy and molecular dynamics simulations, we study the effects of various forms of nitrogen post deposition anneal (PDA) on the electric properties of hafnia in the context of its application as a gate dielectric in field effect transistors (FET). We consider the atomic structure and energetics of nitrogen containing defects which can be formed during the PDA in various N-based ambients: N2, N+2, N, NH3, NO, N2O. We analyse the role of such defects in fixed charge accumulation, electron trapping and in the growth of the interface SiOx layer. We find that nitrogen anneal of the oxides leads to an effective immobilization of native defects such as oxygen vacancies and interstitial oxygen ions, which may inhibit growth of silica layer. Nitrogen in any form effectively incorporates into the pre-existing oxygen vacancies and, therefore may decrease the concentration of shallow electron traps. However, nitrogen in any form is unlikely to significantly reduce the fixed charge in the dielectric.
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Submitted 4 October, 2004;
originally announced October 2004.
