Homologous self-assembled superlattices: What causes their periodic polarity switching? Review, model, and experimental test
Authors:
Varun Thakur,
Dor Benafsha,
Yury Turkulets,
Almog R. Azulay,
Xin Liang,
Rachel S. Goldman,
Ilan Shalish
Abstract:
Quantum semiconductor structures are commonly achieved by bandgap engineering that relies on the ability to switch from one semiconductor to another during their growth. Growth of a superlattice is typically demanding technologically. In contrast, accumulated evidence points to a tendency among a certain class of multiple-cation binary oxides to self-assemble spontaneously as superlattice structur…
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Quantum semiconductor structures are commonly achieved by bandgap engineering that relies on the ability to switch from one semiconductor to another during their growth. Growth of a superlattice is typically demanding technologically. In contrast, accumulated evidence points to a tendency among a certain class of multiple-cation binary oxides to self-assemble spontaneously as superlattice structures. This class has been dubbed the homologous superlattices. For a famous example, when a mixture of indium and zinc is oxidized, the phases of In-O and ZnO separate in an orderly periodic manner, along the ZnO polar axis, with polarity inversion taking place between consecutive ZnO sections. As we review here, the same structure has been observed when the indium was replaced with other metals, and perhaps even in ZnO alone. This peculiar self-assembled structure has been attracting research over the past decade. The purpose of this study is to gain understanding of the physics underlying the formation of this unique structure. Here, we first provide an extensive review of the accumulated literature on these spontaneously-formed structures and then propose an explanation for the long-standing mystery of this intriguing self-assembly in the form of an electrostatic growth phenomenon and test the proposed model on experimental data.
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Submitted 28 August, 2022;
originally announced August 2022.
