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Evaluating Computational Shortcuts in Supercell-Based Phonon Calculations of Molecular Crystals: The Instructive Case of Naphthalene
Authors:
Tomas Kamencek,
Sandro Wieser,
Hirotaka Kojima,
Natalia Bedoya-Martínez,
Johannes P. Dürholt,
Rochus Schmid,
Egbert Zojer
Abstract:
Phonons crucially impact a variety of properties of organic semiconductor materials. For instance, charge- and heat transport depend on low-frequency phonons, while for other properties, such as the free energy, especially high-frequency phonons count. For all these quantities one needs to know the entire phonon band structure, whose simulation becomes exceedingly expensive for more complex system…
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Phonons crucially impact a variety of properties of organic semiconductor materials. For instance, charge- and heat transport depend on low-frequency phonons, while for other properties, such as the free energy, especially high-frequency phonons count. For all these quantities one needs to know the entire phonon band structure, whose simulation becomes exceedingly expensive for more complex systems when using methods like dispersion-corrected density functional theory (DFT). Therefore, in the present contribution we evaluate the performance of more approximate methodologies, including density functional tight binding (DFTB) and a pool of force fields (FF) of varying complexity and sophistication. Beyond merely comparing phonon band structures, we also critically evaluate to what extent derived quantities, like temperature-dependent heat capacities, mean squared thermal displacements and temperature-dependent free energies are impacted by shortcomings in the description of the phonon bands. As a benchmark system, we choose (deuterated) naphthalene, as the only organic semiconductor material for which to date experimental phonon band structures are available in the literature. Overall, the best performance amongst the approximate methodologies is observed for a system-specifically parametrized second-generation force field. Interestingly, in the low-frequency regime also force fields with a rather simplistic model for the bonding interactions (like the General Amber Force Field) perform rather well. As far as the tested DFTB parametrization is concerned, we obtain a significant underestimation of the unit cell volume resulting in a pronounced overestimation of the phonon energies in the low frequency region. This cannot be mended by relying on the DFT-calculated unit cell, since with this unit cell the DFTB phonon frequencies significantly underestimate the experiments.
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Submitted 6 April, 2020; v1 submitted 7 February, 2020;
originally announced February 2020.
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The worm-LBM, an algorithm for a high number of propagation directions on a lattice Boltzmann grid: the case of phonon transport
Authors:
René Hammer,
Verena Fritz,
Natalia Bedoya-Martínez
Abstract:
The lattice Boltzmann method (LBM) is a numerical approach to tackle problems described by a Boltzmann type-equation, where time, space, and velocities are discretized to describe scattering and advection. Even though the LBM executes advection along a lattice direction without numerical error, its usage in the high Knudsen number regime (ballistic) has been hindered by the ray effect problem (for…
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The lattice Boltzmann method (LBM) is a numerical approach to tackle problems described by a Boltzmann type-equation, where time, space, and velocities are discretized to describe scattering and advection. Even though the LBM executes advection along a lattice direction without numerical error, its usage in the high Knudsen number regime (ballistic) has been hindered by the ray effect problem (for dimensions greater than 1D). This problem has its origin in the low number of available propagation directions on standard LBM lattices. Here, to overcome this limitation, we propose the worm-lattice Boltzmann method (worm-LBM), which allows a high number of lattice directions by alternating in time the basic directions described within the next neighbor schemes. Additionally, to overcome the velocity anisotropy issue, which otherwise clearly manifests itself in the ballistic regime (e.g. the $\sqrt 2$ higher grid velocity of the D2Q8 scheme along the diagonal direction compared to the axial one), the time-adaptive scheme (TAS) is proposed. The TAS method makes use of pausing advection on the grid, allowing to impose not only isotropic propagation but also arbitrary direction-dependent grid velocity. Last but not least, we propose a grid-mean free path (grid-MFP) correction to correctly handle the aforementioned velocity issue in the diffusive limit, without affecting the ballistic one. We provide a detailed description of the TAS method and the worm-LBM algorithm, and verify their numerical accuracy by using several transient diffusive-ballistic phonon transport cases, including different initial and boundary conditions. Overall, the new, very accurate, and efficient worm-LBM algorithm, free of numerical smearing and false scattering, has the potential to be at the forefront of the numerical solvers to tackle the advective part of different equations in a wide field of applications.
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Submitted 9 September, 2020; v1 submitted 31 October, 2019;
originally announced November 2019.
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Understanding Phonon Properties in Isoreticular Metal-Organic Frameworks from First Principles
Authors:
Tomas Kamencek,
Natalia Bedoya-Martínez,
Egbert Zojer
Abstract:
Metal-organic frameworks (MOFs) are crystalline materials consisting of metal centers and organic linkers forming open and porous structures. They have been extensively studied due to various possible applications exploiting their large amount of internal surface area. Phonon properties of MOFs are, however, still largely unexplored, despite their relevance for thermal and electrical conductivitie…
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Metal-organic frameworks (MOFs) are crystalline materials consisting of metal centers and organic linkers forming open and porous structures. They have been extensively studied due to various possible applications exploiting their large amount of internal surface area. Phonon properties of MOFs are, however, still largely unexplored, despite their relevance for thermal and electrical conductivities, thermal expansion, and mechanical properties. Here, we use quantum-mechanical simulations to provide an in-depth analysis of the phonon properties of isoreticular MOFs. We consider phonon band structures, spatial confinements of modes, projected densities of states, and group velocity distributions. We find that more complex linkers shift the spectral weight of the phonon density of states towards higher frequencies, while increasing the mass of the metal atoms in the nodes has the opposite effect. Due to the high porosity of MOFs, we observe a particularly pronounced polarization dependence of the dispersion of acoustic phonons with rather high group velocities for longitudinal acoustic modes. Interestingly, also for several optical phonon modes group velocities amounting to several thousand m/s are obtained. For heterogeneous systems like MOFs, correlating group velocities and the displacement of modes is particularly relevant. Here we find that high group velocities are generally associated with delocalized vibrations, while the inverse correlation does not necessarily hold. To quantify anharmonicities, we calculate mode Grüneisen parameters, which we find to be significant only for phonons with frequencies below ~3 THz. The presented results provide the foundations for an in-depth understanding of the vibrational properties of MOF, and, thus, pave the way for a future rational design of systems with well-defined phonon properties.
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Submitted 13 November, 2019; v1 submitted 4 July, 2019;
originally announced July 2019.
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Phase diagram of silicon from atomistic simulations
Authors:
M. Kaczmarski,
O. N. Bedoya-Martinez,
E. R. Hernandez
Abstract:
In this letter we present a calculation of the temperature-pressure phase diagram of Si in a range of pressures covering from -5 to 20 GPa and temperatures up to the melting point. The phase boundaries and triple points between the diamond, liquid, $β$-Sn and ${Si}_{34}$ clathrate phases are reported. We have employed efficient simulation techniques to calculate free energies and to numerically…
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In this letter we present a calculation of the temperature-pressure phase diagram of Si in a range of pressures covering from -5 to 20 GPa and temperatures up to the melting point. The phase boundaries and triple points between the diamond, liquid, $β$-Sn and ${Si}_{34}$ clathrate phases are reported. We have employed efficient simulation techniques to calculate free energies and to numerically integrate the Clausius-Clapeyron equation, combined with a tight binding model capable of an accuracy comparable to that of first-principles methods. The resulting phase diagram agrees well with the available experimental data.
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Submitted 25 February, 2005;
originally announced February 2005.
