Controllable p$-$n junctions in three$-$dimensional Dirac semimetal Cd$_3$As$_2$ nanowires
Authors:
Janice Ruth Bayogan,
Kidong Park,
Zhuo Bin Siu,
Sung Jin An,
Chiu-Chun Tang,
Xiao-Xiao Zhang,
Man Suk Song,
Jeunghee Park,
Mansoor B. A. Jalil,
Naoto Nagaosa,
Kazuhiko Hirakawa,
Christian Schönenberger,
Jungpil Seo,
Minkyung Jung
Abstract:
We demonstrate a controllable p$-$n junction in a three$-$dimensional Dirac semimetal (DSM) Cd$_3$As$_2$ nanowire with two recessed bottom gates. The device exhibits four different conductance regimes with gate voltages, the unipolar (n$-$n and p$-$p) regime and the bipolar (n$-$p and n$-$p) one, where p$-$n junctions are formed. The conductance in the p$-$n junction regime decreases drastically w…
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We demonstrate a controllable p$-$n junction in a three$-$dimensional Dirac semimetal (DSM) Cd$_3$As$_2$ nanowire with two recessed bottom gates. The device exhibits four different conductance regimes with gate voltages, the unipolar (n$-$n and p$-$p) regime and the bipolar (n$-$p and n$-$p) one, where p$-$n junctions are formed. The conductance in the p$-$n junction regime decreases drastically when a magnetic field is applied perpendicular to the nanowire, which is due to the suppression of Klein tunneling. In this regime, the device shows quantum dot behavior. On the other hand, clear conductance plateaus are observed in the n$-$n regime likely owing to the cyclotron motion of carriers at high magnetic fields. Our experiment shows that the ambipolar tunability of DSM nanowires can enable the realization of quantum devices based on quantum dots and electron optics.
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Submitted 10 September, 2019;
originally announced September 2019.
