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Operating two exchange-only qubits in parallel
Authors:
Mateusz T. Mądzik,
Florian Luthi,
Gian Giacomo Guerreschi,
Fahd A. Mohiyaddin,
Felix Borjans,
Jason D. Chadwick,
Matthew J. Curry,
Joshua Ziegler,
Sarah Atanasov,
Peter L. Bavdaz,
Elliot J. Connors,
J. Corrigan,
H. Ekmel Ercan,
Robert Flory,
Hubert C. George,
Benjamin Harpt,
Eric Henry,
Mohammad M. Islam,
Nader Khammassi,
Daniel Keith,
Lester F. Lampert,
Todor M. Mladenov,
Randy W. Morris,
Aditi Nethwewala,
Samuel Neyens
, et al. (16 additional authors not shown)
Abstract:
Semiconductors are among the most promising platforms to implement large-scale quantum computers, as advanced manufacturing techniques allow fabrication of large quantum dot arrays. Various qubit encodings can be used to store and manipulate quantum information on these quantum dot arrays. Regardless of qubit encoding, precise control over the exchange interaction between electrons confined in qua…
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Semiconductors are among the most promising platforms to implement large-scale quantum computers, as advanced manufacturing techniques allow fabrication of large quantum dot arrays. Various qubit encodings can be used to store and manipulate quantum information on these quantum dot arrays. Regardless of qubit encoding, precise control over the exchange interaction between electrons confined in quantum dots in the array is critical. Furthermore, it is necessary to execute high-fidelity quantum operations concurrently to make full use of the limited coherence of individual qubits. Here, we demonstrate the parallel operation of two exchange-only qubits, consisting of six quantum dots in a linear arrangement. Using randomized benchmarking techniques, we show that issuing pulses on the five barrier gates to modulate exchange interactions in a maximally parallel way maintains the quality of qubit control relative to sequential operation. The techniques developed to perform parallel exchange pulses can be readily adapted to other quantum-dot based encodings. Moreover, we show the first experimental demonstrations of an iSWAP gate and of a charge-locking Pauli spin blockade readout method. The results are validated using cross-entropy benchmarking, a technique useful for performance characterization of larger quantum computing systems; here it is used for the first time on a quantum system based on semiconductor technology.
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Submitted 1 April, 2025;
originally announced April 2025.
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A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature
Authors:
P. L. Bavdaz,
H. G. J. Eenink,
J. van Staveren,
M. Lodari,
C. G. Almudever,
J. S. Clarke,
F. Sebastiano,
M. Veldhorst,
G. Scappucci
Abstract:
We demonstrate a 36$\times$36 gate electrode crossbar that supports 648 narrow-channel field effect transistors (FET) for gate-defined quantum dots, with a quadratic increase in quantum dot count upon a linear increase in control lines. The crossbar is fabricated on an industrial $^{28}$Si-MOS stack and shows 100% FET yield at cryogenic temperature. We observe a decreasing threshold voltage for wi…
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We demonstrate a 36$\times$36 gate electrode crossbar that supports 648 narrow-channel field effect transistors (FET) for gate-defined quantum dots, with a quadratic increase in quantum dot count upon a linear increase in control lines. The crossbar is fabricated on an industrial $^{28}$Si-MOS stack and shows 100% FET yield at cryogenic temperature. We observe a decreasing threshold voltage for wider channel devices and obtain a normal distribution of pinch-off voltages for nominally identical tunnel barriers probed over 1296 gate crossings. Macroscopically across the crossbar, we measure an average pinch-off of 1.17~V with a standard deviation of 46.8 mV, while local differences within each unit cell indicate a standard deviation of 23.1~mV. These disorder potential landscape variations translate to 1.2 and 0.6 times the measured quantum dot charging energy, respectively. Such metrics provide means for material and device optimization and serve as guidelines in the design of large-scale architectures for fault-tolerant semiconductor-based quantum computing.
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Submitted 9 February, 2022;
originally announced February 2022.
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Effect of quantum Hall edge strips on valley splitting in silicon quantum wells
Authors:
Brian Paquelet Wuetz,
Merritt P. Losert,
Alberto Tosato,
Mario Lodari,
Peter L. Bavdaz,
Lucas Stehouwer,
Payam Amin,
James S. Clarke,
Susan N. Coppersmith,
Amir Sammak,
Menno Veldhorst,
Mark Friesen,
Giordano Scappucci
Abstract:
We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on both perpendicular magnetic field $B$ and Hall density by performing activation energy measurements in the quantum Hall regime over a large range of filling factors. The mobility gap of the valley-split levels increases…
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We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on both perpendicular magnetic field $B$ and Hall density by performing activation energy measurements in the quantum Hall regime over a large range of filling factors. The mobility gap of the valley-split levels increases linearly with $B$ and is strikingly independent of Hall density. The data are consistent with a transport model in which valley splitting depends on the incremental changes in density $eB/h$ across quantum Hall edge strips, rather than the bulk density. Based on these results, we estimate that the valley splitting increases with density at a rate of 116 $μ$eV/10$^{11}$cm$^{-2}$, consistent with theoretical predictions for near-perfect quantum well top interfaces.
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Submitted 29 September, 2020; v1 submitted 3 June, 2020;
originally announced June 2020.
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Multiplexed quantum transport using commercial off-the-shelf CMOS at sub-kelvin temperatures
Authors:
B. Paquelet Wuetz,
P. L. Bavdaz,
L. A. Yeoh,
R. Schouten,
H. van der Does,
M. Tiggelman,
D. Sabbagh,
A. Sammak,
C. G. Almudever,
F. Sebastiano,
J. S. Clarke,
M. Veldhorst,
G. Scappucci
Abstract:
Continuing advancements in quantum information processing have caused a paradigm shift from research mainly focused on testing the reality of quantum mechanics to engineering qubit devices with numbers required for practical quantum computation. One of the major challenges in scaling toward large-scale solid-state systems is the limited input/output (I/O) connectors present in cryostats operating…
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Continuing advancements in quantum information processing have caused a paradigm shift from research mainly focused on testing the reality of quantum mechanics to engineering qubit devices with numbers required for practical quantum computation. One of the major challenges in scaling toward large-scale solid-state systems is the limited input/output (I/O) connectors present in cryostats operating at sub-kelvin temperatures required to execute quantum logic with high-fidelity. This interconnect bottleneck is equally present in the device fabrication-measurement cycle, which requires high-throughput and cryogenic characterization to develop quantum processors. Here we multiplex quantum transport of two-dimensional electron gases at sub-kelvin temperatures. We use commercial off-the-shelf CMOS multiplexers to achieve an order of magnitude increase in the number of wires. Exploiting this technology we advance 300 mm epitaxial wafers manufactured in an industrial CMOS fab to a record electron mobility of (3.9$\pm$0.6)$\times$10$^5$ cm$^2$\slash Vs and percolation density of (6.9$\pm$0.4)$\times$10$^{10}$ cm$^{-2}$, representing a key step toward large silicon qubit arrays. We envision that the demonstration will inspire the development of cryogenic electronics for quantum information and because of the simplicity of assembly, low-cost, yet versatility, we foresee widespread use of similar cryo-CMOS circuits for high-throughput quantum measurements and control of quantum engineered systems.
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Submitted 26 July, 2019;
originally announced July 2019.
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Impact of valley phase and splitting on readout of silicon spin qubits
Authors:
M. L. V. Tagliaferri,
P. L. Bavdaz,
W. Huang,
A. S. Dzurak,
D. Culcer,
M. Veldhorst
Abstract:
We investigate the effect of the valley degree of freedom on Pauli-spin blockade readout of spin qubits in silicon. The valley splitting energy sets the singlet-triplet splitting and thereby constrains the detuning range. The valley phase difference controls the relative strength of the intra- and inter-valley tunnel couplings, which, in the proposed Pauli-spin blockade readout scheme, couple sing…
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We investigate the effect of the valley degree of freedom on Pauli-spin blockade readout of spin qubits in silicon. The valley splitting energy sets the singlet-triplet splitting and thereby constrains the detuning range. The valley phase difference controls the relative strength of the intra- and inter-valley tunnel couplings, which, in the proposed Pauli-spin blockade readout scheme, couple singlets and polarized triplets, respectively. We find that high-fidelity readout is possible for a wide range of phase differences, while taking into account experimentally observed valley splittings and tunnel couplings. We also show that the control of the valley splitting together with the optimization of the readout detuning can compensate the effect of the valley phase difference. To increase the measurement fidelity and extend the relaxation time we propose a latching protocol that requires a triple quantum dot and exploits weak long-range tunnel coupling. These opportunities are promising for scaling spin qubit systems and improving qubit readout fidelity
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Submitted 5 March, 2018;
originally announced March 2018.
