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Optical Orientation of Mn$^{2+}$ Spins in Bulk (Zn, Mn)Se Induced by Magnetic Field
Authors:
N. V. Kozyrev,
K. A. Baryshnikov,
B. R. Namozov,
I. I. Kozlov,
M. E. Boiko,
N. S. Averkiev,
Yu. G. Kusrayev
Abstract:
The optical orientation of Mn$^{2+}$ spins in the first excited state $^4$T$_1$ was experimentally observed in bulk (Zn, Mn)Se ($x_\mathrm{Mn}=0.01$) in the an external magnetic field of up to $6\,$T in Faraday geometry. This occurred during quasi-resonant continuous wave circularly polarized photoexcitation of the intracenter d-d transitions. A non-monotonic dependence of the thermal circular pol…
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The optical orientation of Mn$^{2+}$ spins in the first excited state $^4$T$_1$ was experimentally observed in bulk (Zn, Mn)Se ($x_\mathrm{Mn}=0.01$) in the an external magnetic field of up to $6\,$T in Faraday geometry. This occurred during quasi-resonant continuous wave circularly polarized photoexcitation of the intracenter d-d transitions. A non-monotonic dependence of the thermal circular polarization of the intracenter photoluminescence on the magnetic field was observed. A theoretical model is proposed to describe the selection rules for resonant optical d-d transitions of an isolated Mn$^{2+}$ ion in a ZnSe cubic crystal. These rules are based on the analysis of the total angular momentum symmetry for the ground ($^6$A$_1$) and first excited ($^4$T$_1$) states of the Mn$^{2+}$ ion. This discussion neglects the specific mechanism for spin-flip processes in a d-shell of the ion during optical excitation. The analysis is founded on the rotational symmetry of the effective total angular momenta and parity for each state as a whole. Additionally, the Jahn-Teller coupling of the excited state orbital parts with tetragonal ($e$-type) local distortions of the crystal lattice is considered. This coupling results in the segregation of cubic axes and spin projections on these axes due to weak spin-orbit and spin-spin coupling in the excited state. This leads to energy splitting for spin states with their projections of $\pm 1/2$ and $\pm 3/2$ on each axis distinguished by specific Jahn-Teller distortion in the corresponding atomic potential minimum. By introducing two different times of relaxation to reach thermodynamic equilibrium for $\pm 1/2$ and $\pm 3/2$ states in each Jahn-Teller configuration, an angle dependent optical orientation contribution in photoluminescence polarization arises in the presence of a magnetic field.
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Submitted 12 October, 2024;
originally announced October 2024.
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Nonlinear screening and charge redistribution in periodically doped graphene
Authors:
K. A. Baryshnikov,
A. V. Gert,
Yu. B. Vasilyev,
A. P. Dmitriev
Abstract:
The screening problem for the Coulomb potential of a charge located in a two-dimensional (2D) system has an intriguing solution with a power law distance screening factor due to out-of-plane electrical fields. This is crucially different from a three-dimensional case with exponential screening. The long-range action of electric fields results in the effective inflow of electrons from high-doped re…
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The screening problem for the Coulomb potential of a charge located in a two-dimensional (2D) system has an intriguing solution with a power law distance screening factor due to out-of-plane electrical fields. This is crucially different from a three-dimensional case with exponential screening. The long-range action of electric fields results in the effective inflow of electrons from high-doped regions to low-doped regions of a 2D heterostructure. In graphene and other materials with linear energy spectrum for electrons, such inflow in low-doped regions also occurs, but its effectiveness is dependent on doping level. This can be used for fabricating high-mobility conducting channels. We provide the theory for determining electron potential and concentration in a periodically doped graphene sheet along one dimension taking into account all effects of long-range 2D screening. This results in a substantially nonlinear integro-differential problem, which is solved numerically via computationally cheap algorithm. Similar nonlinear problems arise in a wide range of doped 2D heterostructures made of linear spectrum materials.
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Submitted 9 September, 2024; v1 submitted 23 July, 2024;
originally announced July 2024.
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Exchange interaction for Mn acceptor in GaAs: revealing its strong deformation dependence
Authors:
I. V. Krainov,
K. A. Baryshnikov,
A. A. Karpova,
N. S. Averkiev
Abstract:
In this paper we calculate exchange interaction constant between manganese ion inner electronic $d$-shell and GaAs valence band bounded hole using their microscopic multiparticle wave functions. We reveal its parametric dependence on crystal lattice deformations and find out that it could be about and even more than dozens percent when the strain tensor reaches values of $10^{-3} ÷10^{-2}$. This f…
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In this paper we calculate exchange interaction constant between manganese ion inner electronic $d$-shell and GaAs valence band bounded hole using their microscopic multiparticle wave functions. We reveal its parametric dependence on crystal lattice deformations and find out that it could be about and even more than dozens percent when the strain tensor reaches values of $10^{-3} ÷10^{-2}$. This fact is in accordance with the previous hypothesis of deformation dependence of Mn acceptors in GaAs fine energy structure obtained from Raman spectroscopy, and we show that this dependence has the same magnitude. Also, we resolve here the problem of a substantial high temperature mismatch between well-developed theory and experimental data for the static magnetic susceptibility of Mn ions in GaAs. We show by numerical estimates and calculations that quite a strong parametric dependence of the exchange coupling value on GaAs lattice expansion determines the high temperature (above $50~$K) magnetic susceptibility reduction as well.
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Submitted 12 January, 2023;
originally announced January 2023.
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Spin imaging of Poiseuille flow of viscous electronic fluid
Authors:
K. S. Denisov,
K. A. Baryshnikov,
P. S. Alekseev
Abstract:
Recent progress in fabricating high-quality conductors with small densities of defects has initiated the studies of the viscous electron fluid and has motivated the search for the evidences of the hydrodynamic regime of electron transport. In this work we come up with the spin imaging technique allowing us to attest to the emergence of electron hydrodynamic flows. Based on numerical calculations w…
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Recent progress in fabricating high-quality conductors with small densities of defects has initiated the studies of the viscous electron fluid and has motivated the search for the evidences of the hydrodynamic regime of electron transport. In this work we come up with the spin imaging technique allowing us to attest to the emergence of electron hydrodynamic flows. Based on numerical calculations we demonstrate that the injected electron spin density is inhomogeneous across the channel when the viscous electron fluid forms the Poiseuille flow. We also argue that the Hanle curves at different positions across the channel acquire relative phase shifts resulting from the variation of the electron drift velocity in inhomogeneous hydrodynamic flows. The studied effects can be employed to evidence and study the viscous electron fluid non-invasively.
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Submitted 5 May, 2022;
originally announced May 2022.
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Anisotropic magnetoresistance and memory effect in bulk systems with extended defects
Authors:
K. S. Denisov,
K. A. Baryshnikov,
P. S. Alekseev,
N. S. Averkiev
Abstract:
Memory effects can have a profound impact on the resistivity of semiconductor systems, resulting in giant negative magnetoresistance and MIRO phenomena. This work opens the discussion of the memory effects in 3D conducting systems featured by the presence of the extended one-dimensional defects, such as screw dislocations or static charge stripes. We demonstrate that accounting for the memory effe…
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Memory effects can have a profound impact on the resistivity of semiconductor systems, resulting in giant negative magnetoresistance and MIRO phenomena. This work opens the discussion of the memory effects in 3D conducting systems featured by the presence of the extended one-dimensional defects, such as screw dislocations or static charge stripes. We demonstrate that accounting for the memory effect, that is the capture of electrons on collisionless spiral trajectories winding around extended defects, leads to the strong negative magnetoresistance in case when the external magnetic field direction becomes parallel to the defects axis. This effect gives rise to a significant magnetoresistance anisotropy already for an isotropic Fermi surface and no spin-orbit effects. The proposed resistivity feature can be used to detect one-dimensional scattering defects in these systems.
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Submitted 2 April, 2021;
originally announced April 2021.
