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High-T$_c$ superconductivity in H$_3$S: Pressure effects on superconducting critical temperature and Cooper-Pairs Distribution Function
Authors:
J. A. Camargo-Martínez,
G. I. González-Pedreros,
R. Baquero
Abstract:
We use first-principles calculations to study pressure effects on the vibrational and superconducting properties of H$_3$S in the cubic $Im\bar{3}m$ phase for the pressure range where the superconducting critical temperature (T$_c$) was measured (155-225 GPa). The pressure effects were incorporated using the Functional Derivative Method (FDM). In this paper, we present for the first time, the Coop…
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We use first-principles calculations to study pressure effects on the vibrational and superconducting properties of H$_3$S in the cubic $Im\bar{3}m$ phase for the pressure range where the superconducting critical temperature (T$_c$) was measured (155-225 GPa). The pressure effects were incorporated using the Functional Derivative Method (FDM). In this paper, we present for the first time, the Cooper-Pairs Distribution Functions D$_{cp}$($ω,T_c$) for H$_3$S, which will allow to identify the spectral regions where Cooper-Pairs formation at temperature T$_c$ is more favorable. We analyzed in detail the pressure effects on the electron-phonon spectral density function $α^2$F$(ω)$ and phonon density of states (PhDOS) and their relationship with T$_c$. The FDM manages to reproduce the trend of the pressure dependence of critical temperature, in good agreement with experimental data in the range of 155 to 190 GPa. The $D_{cp}(ω,T_c)$ suggests that the low-frequency vibration region is where Cooper-Pairs are possible, which means that S-vibrations have an important role in the H$_3$S superconductivity properties.
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Submitted 25 September, 2019; v1 submitted 12 June, 2019;
originally announced June 2019.
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On the Calculation of the Inverse Isotope Effect in PdH(D): A Migdal-Eliashberg Theory Approach
Authors:
S. Villa-Cortés,
R. Baquero
Abstract:
Replacement of hydrogen by deuterium in palladium hydride results in higher superconducting temperatures and an anomalous isotope effect that has not been yet fully explained. In this work, we try a new approach to the explanation of the inverse isotope effect in PdH(D). Our approach introduces two new aspects. First, we took into account the experimental evidence that at temperatures below 50 K,…
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Replacement of hydrogen by deuterium in palladium hydride results in higher superconducting temperatures and an anomalous isotope effect that has not been yet fully explained. In this work, we try a new approach to the explanation of the inverse isotope effect in PdH(D). Our approach introduces two new aspects. First, we took into account the experimental evidence that at temperatures below 50 K, the crystal structure of PdH and of PdD is zincblende. Second, we take into account not only the influence of the electron-phonon interaction but also the electron-electron interaction contribution to the isotope coeffiecient due tothe replacement of deuterium in the place of hydrogen. We used the Migdal-Eliashberg theory to perform our ab initio calculations. We found in this picture that the electron-electron interaction is considerably reduced by the isotope substitution and is the most important factor to explain the inverse isotope effect. We found $ΔT_c^{total}=2.224\:K$ and $α= -0.3134$ in excellent agreement with the values found experimentally.
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Submitted 10 January, 2018;
originally announced January 2018.
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The Thermodynamics and the Inverse Isotope Effect of superconducting PdH and PdD under pressure
Authors:
S. Villa-Cortés,
R. Baquero
Abstract:
We present in this paper the thermodynamics of superconducting PdH and PdD under pressure. We make use of a general method to calculate the thermodynamics under pressure within the Migdal-Eliashberg theory. We have considered the crystal lattice to be zincblende taking into account the experimental evidence for both PdH and PdD at temperatures below 55 K. We have studied, in particular, the change…
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We present in this paper the thermodynamics of superconducting PdH and PdD under pressure. We make use of a general method to calculate the thermodynamics under pressure within the Migdal-Eliashberg theory. We have considered the crystal lattice to be zincblende taking into account the experimental evidence for both PdH and PdD at temperatures below 55 K. We have studied, in particular, the changes induced by pressure in the critical temperature, $T_c$, in the specific heat jump at $T_c$, in the energy gap at $T=0K$, in the deviation function $D(t)$ and in the isotope effect coefficient, $α$. We get a very good agreement with experiment where this data exist. This method represents a basis on which the thermodynamics of other hydrides under pressure can be calculated.
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Submitted 22 March, 2018; v1 submitted 30 August, 2017;
originally announced August 2017.
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Inverse Isotope Effect in PdH(D)
Authors:
S. Villa-Cortés,
R. Baquero
Abstract:
In this letter, we take a new approach to the explanation of the inverse isotope effect in PdH(D). Our approach introduces two new aspects. First, we took into account the experimental evidence that at temperatures below 50 K, the crystal structure of PdH and of PdD is zincblende. Second, we studied the contribution of both, the electron-phonon and the electron-electron interactions. We used the M…
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In this letter, we take a new approach to the explanation of the inverse isotope effect in PdH(D). Our approach introduces two new aspects. First, we took into account the experimental evidence that at temperatures below 50 K, the crystal structure of PdH and of PdD is zincblende. Second, we studied the contribution of both, the electron-phonon and the electron-electron interactions. We used the Migdal-Eliashberg theory to perform our ab initio calculations. We found that the electron-electron contribution is the most important one to explain the inverse isotope effect. We reproduced the experimentally found values for the critical temperature and the isotope coefficient. Our analysis represents a direct and simple explanation for the inverse isotope effect in PdH(D).
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Submitted 17 August, 2017; v1 submitted 13 August, 2017;
originally announced August 2017.
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Superconductivity under pressure: application of the functional derivative
Authors:
G. I. González-Pedreros,
R. Baquero
Abstract:
In this paper, we calculate the superconducting critical temperature as a function of pressure, Tc(P ), using a method based on the functional derivative of the critical temperature with the Eliashberg function, dTc/dA2F. The coulomb electron-electron repulsion parameter, mu*(p) at each pressure is obtained in a consistent way by solving the linearized Migdal-Eliashberg equation. This method requi…
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In this paper, we calculate the superconducting critical temperature as a function of pressure, Tc(P ), using a method based on the functional derivative of the critical temperature with the Eliashberg function, dTc/dA2F. The coulomb electron-electron repulsion parameter, mu*(p) at each pressure is obtained in a consistent way by solving the linearized Migdal-Eliashberg equation. This method requires as the starting input only the knowledge of Tc(P ) at the starting pressure. It applies to superconductors for which the Migdal-Eliashberg equations hold. We study Al, a typical BCS weak coupling superconductor with a low Tc . Our results of Tc(P ) as a function of pressure for Al show an excellent agreement with the calculations of Profeta et al. (Phys. Rev. Lett.96, 047003 (2006)) which agree well with experiment.
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Submitted 10 August, 2017;
originally announced August 2017.
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Effects of Pb doping on structural and electronics properties of Bi$_2$Sr$_2$Ca$_2$Cu$_3$O$_{10}$
Authors:
J. A. Camargo-Martínez,
R. Baquero
Abstract:
Pb doping effect in the Bi$_2$Sr$_2$Ca$_2$Cu$_3$O$_{10}$ compound (Bi2223) on the structural and electronic properties were investigated, using the Local Density (LDA) and Virtual Crystal (VCA) approximations within the framework of the Density Functional Theory (DFT), taking as reference the procedure implemented by H.Lin {\it et al.} in the Bi2212 compound [{\it Phys. Rev. Lett.} {\bf 96} (2006)…
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Pb doping effect in the Bi$_2$Sr$_2$Ca$_2$Cu$_3$O$_{10}$ compound (Bi2223) on the structural and electronic properties were investigated, using the Local Density (LDA) and Virtual Crystal (VCA) approximations within the framework of the Density Functional Theory (DFT), taking as reference the procedure implemented by H.Lin {\it et al.} in the Bi2212 compound [{\it Phys. Rev. Lett.} {\bf 96} (2006) 097001]. Results show that, the incorporation of Pb-dopant in Bi2223 lead a rigid displacement of the Bi/Pb-O bands toward higher energies, with a null contribution at the Fermi level, around the high symmetry point $\overline{\text{M}}$ in the irreducible Brillouin zone, for Pb doping concentration equal to or more than 26\%, avoiding the presence of the so-called Bi-O {\it pockets} in the Fermi surface, in good agreement with angle-resolved photoemission spectroscopy (ARPES) and nuclear magnetic resonance (NMR) experiments, although a slight metallic character of the Bi-O bonds is still observed which would disagree with some experimental reports. The calculations show that the changes on the structural properties are associated to the presence or absence of the Bi-O {\it pockets} in the Fermi surface
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Submitted 21 September, 2015;
originally announced September 2015.
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Detailed analysis of the Bi-O pockets problem in $Bi_2Sr_2Ca_2Cu_3O_{10}$
Authors:
J. A. Camargo-Martínez,
Diego Espitia,
R. Baquero
Abstract:
The Bi-O pockets problem, namely, the appearance in theoretical ab initio calculations of the electronic band structure of Bi-cuprates of a pocket of states at the Fermi energy ($E_F$) that is attributed to states belonging to the Bi-O plane is an issue that still calls for more study. The Bi-O pockets are in contradiction with experiments. We have investigated the possible reasons for the disagre…
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The Bi-O pockets problem, namely, the appearance in theoretical ab initio calculations of the electronic band structure of Bi-cuprates of a pocket of states at the Fermi energy ($E_F$) that is attributed to states belonging to the Bi-O plane is an issue that still calls for more study. The Bi-O pockets are in contradiction with experiments. We have investigated the possible reasons for the disagreement. We checked that by using the experimental lattice and internal parameters without any optimization procedure, the Bi-O pockets do not appear at $E_F$ in agreement with experiment. Nevertheless, as pointed out by R. Kouba et al. [{\em Phys. Rev. B} {\bf 60}, 9321 (1999)] optimization is compulsory to a band structure calculation that will describe appropriately the electronic properties. But starting with the experimental parameters a further optimization procedure previous to the actual ab initio calculation leads to the Bi-O pockets. Doping with 25% of Pb they disappear. From the several configurations that we have considered, we found two very simple ways in which the Bi-O pockets disappear without avoiding an optimization procedure previous to the calculation and without including a doping of any kind. In this paper, we report the effect of the slight displacement of the oxygen atom associated to the Sr-plane (O3) in the electronic properties of $Bi_2Sr_2Ca_2Cu_3O_{10}$ (Bi-2223) with tetragonal structure ($I4/mmm$) using the Local Density Approximation (LDA). The slight displacement is performed after the system has been optimized. We determined the intervals of the O3 atomic positions for which calculations of the band structures show that the Bi-O bands emerge towards higher energies in agreement with the experimental results, thereby solving the Bi-O pockets problem (continue).
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Submitted 12 August, 2013;
originally announced August 2013.
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First-principles study of electronic structure of $Bi_2Sr_2Ca_2Cu_3O_{10}$
Authors:
J. A. Camargo-Martínez,
Diego Espitia,
R. Baquero
Abstract:
We present for the first time the band structure calculation of $Bi_2Sr_2Ca_2Cu_3O_{10}$ compound in the tetragonal structure (space group $I4/mmm$). We used the Local Density Approximation (LDA) as in the Wien2k code. We analyze in detail the band structure and the Fermi surface (FS). Our results are in very good agreement with recent experiments. The FS shows the feature known as the Bi-O pocket…
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We present for the first time the band structure calculation of $Bi_2Sr_2Ca_2Cu_3O_{10}$ compound in the tetragonal structure (space group $I4/mmm$). We used the Local Density Approximation (LDA) as in the Wien2k code. We analyze in detail the band structure and the Fermi surface (FS). Our results are in very good agreement with recent experiments. The FS shows the feature known as the Bi-O pocket problem which we associate with the interaction of the O3 atoms with the Cu2-O2 and Bi-O4 planes. Ceramic $Bi_2Sr_2Ca_2Cu_3O_{10}$ stabilized with Pb has been reported as a superconductor with $T_c \sim 100$. CdS microparticles were embedded into the ceramic $Bi_2Sr_2Ca_2Cu_3O_{10}$. The composite did show a superconducting phase transition at a lower $T_c \sim 70 K$. At even lower temperatures re-entrant behavior was observed. The sample regain the superconducting state at $\sim 47 K$ [arXiv:1101.0277 [cond-mat.supr-con]]. This effect is not observe in the ceramic alone. This calculation is useful per ser and also can contribute to a better understanding of this particular re-entrant behavior.
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Submitted 16 July, 2013;
originally announced July 2013.
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The band gap problem: the accuracy of the Wien2k code confronted
Authors:
J. A. Camargo-Martínez,
R. Baquero
Abstract:
This paper is a continuation of our detailed study [Phys. Rev. B 86, 195106 (2012)] of the performance of the recently proposed modified Becke-Jonhson potential (mBJLDA) within the known Wien2k code. From the 41 semiconductors that we have considered in our previous paper to compute the band gap value, we selected 27 for which we found low temperature experimental data in order to pinpoint the rel…
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This paper is a continuation of our detailed study [Phys. Rev. B 86, 195106 (2012)] of the performance of the recently proposed modified Becke-Jonhson potential (mBJLDA) within the known Wien2k code. From the 41 semiconductors that we have considered in our previous paper to compute the band gap value, we selected 27 for which we found low temperature experimental data in order to pinpoint the relative situation of the newly proposed Wien2k(mBJLDA) method as compared to other methods in the literature. We found that the GWA gives the most accurate predictions. The Wien2k (mBJLDA) code is slightly less precise, in general. The Hybrid functionals are less accurate, on the overall. The GWA is definitely the most precise existing method nowadays. In 88% of the semiconductors considered the error was less than 10%. Both, the GWA and the mBJLDA potential, reproduce the band gap of 15 of the 27 semiconductors considered with a 5% error or less. An extra factor to be taken into account is the computational cost. If one would seek for precision without taking this factor into account, the GWA is the method to use. If one would prefer to sacrifice a little the precision obtained against the savings in computational cost, the empirical mBJLDA potential seems to be the appropriate method. We include a graph that compares directly the performance of the best three methods, according to our analysis, for each of the 27 semiconductors studied. The situation is encouraging but the problem is not yet a closed issue.
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Submitted 17 June, 2013; v1 submitted 9 August, 2012;
originally announced August 2012.
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Metallic behavior at YBaCuO7/ZAs interfaces (Z=Ga, Al)
Authors:
R. Torres,
R. Baquero
Abstract:
We present the electronic band structure of the interfaces $YBa_2Cu_3O_7/GaAs$ (direct gap) and $YBa_2Cu_3O_7/AlAs$ (indirect gap) in different configurations calculated using the Density Functional Theory as in the Wien2k code within the local density approximation. We have projected the density of states at the atomic layers forming the interface. We concentrated in the semiconductor side. The t…
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We present the electronic band structure of the interfaces $YBa_2Cu_3O_7/GaAs$ (direct gap) and $YBa_2Cu_3O_7/AlAs$ (indirect gap) in different configurations calculated using the Density Functional Theory as in the Wien2k code within the local density approximation. We have projected the density of states at the atomic layers forming the interface. We concentrated in the semiconductor side. The two first atomic layers in the semiconductor side of the interface present a clear metallic behavior. We found for both semiconductors considered that it converges towards the bulk atomic-layer projected density of states at the fifth atomic layer from the interface. We considered an ideal non-reconstructed interface in the (001) direction in this work. This behavior is interesting and could be used in several technological applications.
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Submitted 6 August, 2012;
originally announced August 2012.
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Performance of the modified Becke-Johnson potential
Authors:
J. A. Camargo-Martinez,
R. Baquero
Abstract:
Very recently, in the 2011 version of the Wien2K code, the long standing shortcome of the codes based on Density Functional Theory, namely, its impossibility to account for the experimental band gap value of semiconductors, was overcome. The novelty is the introduction of a new exchange and correlation potential, the modified Becke-Johnson potential (mBJLDA). In this paper, we report our detailed…
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Very recently, in the 2011 version of the Wien2K code, the long standing shortcome of the codes based on Density Functional Theory, namely, its impossibility to account for the experimental band gap value of semiconductors, was overcome. The novelty is the introduction of a new exchange and correlation potential, the modified Becke-Johnson potential (mBJLDA). In this paper, we report our detailed analysis of this recent work. We calculated using this code, the band structure of forty one semiconductors and found an important improvement in the overall agreement with experiment as Tran and Blaha [{\em Phys. Rev. Lett.} 102, 226401 (2009)] did before for a more reduced set of semiconductors. We find, nevertheless, within this enhanced set, that the deviation from the experimental gap value can reach even much more than 20%, in some cases. Furthermore, since there is no exchange and correlation energy term from which the mBJLDA potential can be deduced, a direct optimization procedure to get the lattice parameter in a consistent way is not possible as in the usual theory. These authors suggest that a LDA or a GGA optimization procedure is used previous to a band structure calculation and the resulting lattice parameter introduced into the 2011 code. This choice is important since small percentage differences in the lattice parameter can give rise to quite higher percentage deviations from experiment in the predicted band gap value.
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Submitted 9 September, 2013; v1 submitted 17 June, 2012;
originally announced June 2012.
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The modified Becke-Johnson potential analyzed
Authors:
J. A. Camargo,
R. Baquero
Abstract:
Recently in the Wien2k code, the modified Becke-Johnson potential (mBJLDA) was implemented. As the authors [{\em Phys.Rev.Lett.} 102, 226401 (2009)] point, this potential reproduces the band gap of semiconductors with improved accuracy. In this paper we present our analysis of this potential in two directions. First, we checked whether this potential reproduces the band structure for metals, an an…
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Recently in the Wien2k code, the modified Becke-Johnson potential (mBJLDA) was implemented. As the authors [{\em Phys.Rev.Lett.} 102, 226401 (2009)] point, this potential reproduces the band gap of semiconductors with improved accuracy. In this paper we present our analysis of this potential in two directions. First, we checked whether this potential reproduces the band structure for metals, an analysis that lacked in the literature. We calculated the band gap of a group of semiconductors. We observed that the Linear Density Approximation (LDA) give rise to a shorter lattice constant as compared to experiment. The Generalized Gradient Approximation behaves oppositely. Using the average, $a_{Avg}$, in the mBJLDA potential, we obtained a closer to experiment value for the gap. We conclude that the new mBJLDA potential represent an important improvement as compared to the results from the previous version of the Wien2k code. Also the mBJLDA potential can be a very useful tool for the theoretical study of complex systems containing semiconductor compounds such as surfaces, superlattices and interfaces.
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Submitted 17 June, 2013; v1 submitted 15 August, 2011;
originally announced August 2011.
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Processing and study of the composite CdS/Bi-Pb-Sr-Ca-Cu-O
Authors:
E. Díaz-Valdés,
G. S. Contreras-Puente,
N. Campos-Rivera,
C. Falcony-Guajardo,
R. Baquero
Abstract:
We have fabricated and characterized samples of the superconducting- semiconducting Bi-Pb-Sb-Sr-Ca-Cu-O/CdS composite. Nano-size particles of CdS were deposited and introduced into the porosities of the Bi-Pb-Sb-Sr-Ca-Cu-O material by the spray pyrolysis technique. The morphology and hollow size in the porous superconducting material as well as the grain size in CdS and the morphology of the surfa…
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We have fabricated and characterized samples of the superconducting- semiconducting Bi-Pb-Sb-Sr-Ca-Cu-O/CdS composite. Nano-size particles of CdS were deposited and introduced into the porosities of the Bi-Pb-Sb-Sr-Ca-Cu-O material by the spray pyrolysis technique. The morphology and hollow size in the porous superconducting material as well as the grain size in CdS and the morphology of the surface of the composite were obtained by Scanning Electron Microscopy. We obtained the critical superconducting temperature of both the Bi-Pb-Sb-Sr-Ca-Cu-O and the Bi-Pb-Sb-Sr-Ca-Cu-O/CdS composite measuring the resistivity. Both show a metallic behaviour just above the superconducting transition. For the superconductor alone, resistivity starts falling at Tc,on sup = 99,9 K and reaches zero at Tc,sup=76,3 K. The behaviour of the composite is different. The transition starts at Tc,on comp = 65,3 K and reaches zero resistance at Tc,comp = 56,5 K. This seems to indicate that the semiconductor penetrates the whole superconducting Bi-Pb-Sb-Sr-Ca-Cu-O sample so that there is no region of pure superconducting material left. Since the materials do not actually mix (see text) the behaviour might be attributable to the interface. Also the resistivity curves present a very interesting feature, i.e., below the temperature at which the composite attains zero-resistivity, a re-entrant behaviour manifests itself and a finite resistivity peak appears. It increases to a certain value to drop back to zero at some temperature below. We comment further on this feature in the text.
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Submitted 31 December, 2010;
originally announced January 2011.
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(100) ideal-surface band structure for the series of Cu-based chalcopyrites
Authors:
H. Tototzintle-Huitle,
R. Baquero
Abstract:
We use the Surface Green Function Matching (SGFM) method and a tight-binding hamiltonian to calculate the (100)-surface electronic band structure and local density of states of the series of Cu-based A^{I}B^{III}C2^{VI} chalcopyrites . We find four surface states in the optical gap energy region of s-p character and three surface states in the conduction band region of p-character. We show the t…
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We use the Surface Green Function Matching (SGFM) method and a tight-binding hamiltonian to calculate the (100)-surface electronic band structure and local density of states of the series of Cu-based A^{I}B^{III}C2^{VI} chalcopyrites . We find four surface states in the optical gap energy region of s-p character and three surface states in the conduction band region of p-character. We show the trends of different characteristics within the series by means of figures and tables so that the quantitave behavior can be evaluated as well. We did not find Frontier Induced Semi-Infinite states of non-dispersive character in the studied range of energy within the valence band as we found in the case of the (112) surface electronic band structure for CuInSe2.
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Submitted 20 May, 2005;
originally announced May 2005.
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The Optical conductivity resonance from an exact description of the electronic states around the Fermi energy
Authors:
F. Puch,
R. Baquero
Abstract:
In this paper we show that the optical conductivity can be calculated to agree with experiment if the details of the electronic states around the Fermi level are taken into account with some care. More precisely, we present a calculation of the optical conductivity in YBa2Cu3O7 on the basis of an exact (ab initio) three dimensional electronic band structure calculation from which we extract the…
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In this paper we show that the optical conductivity can be calculated to agree with experiment if the details of the electronic states around the Fermi level are taken into account with some care. More precisely, we present a calculation of the optical conductivity in YBa2Cu3O7 on the basis of an exact (ab initio) three dimensional electronic band structure calculation from which we extract the information on the bands near the Fermi energy that can be associated to the CuO2 plane-carrier states. To simulate the superconducting state we superimpose a gap to these bands alone. On these basis, we calculate from the known Kubo-Greenwood formula, the optical conductivity in the normal and in the superconducting state. Our calculation agrees with the experimental result even in the higher part of the frequency spectrum. Our way of calculating the resonance suggests a model of evolution for the bands under the effect of doping consistent with the recent experimental findings that the optical resonance can disappear while the sample remains superconducting. An important conclusion of this paper is that the resonance depends mostly on the details of the electronic band structure. It is enough to take into account the effect of the superconducting transition through a single parameter (the gap). No details on the mechanism are needed so no mechanism can be tested on this basis. Our calculation suggests a model of evolution for the bands around the Fermi energy under doping that gives some microscopic foundations to the the recent experiments that show unambiguously that the resonance cannot be the cause of superconductivity.
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Submitted 22 April, 2005;
originally announced April 2005.
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Influence of distortion on the electronic band structure of CuInSe2
Authors:
H. Tototzintle-Huitle,
J. Otalora,
J. A. Rodriguez,
R. Baquero
Abstract:
We present a tight-binding calculation of the influence of distorsion on the bulk electronic structure of the chalcopyrite CuInSe2. We calculate the ideal case and then the effect of the inclusion of the distortions. We analyze our results in detail and conclude from a comparison with other work that the distortions must be included in the Hamiltonian to get a proper account of the electronic ba…
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We present a tight-binding calculation of the influence of distorsion on the bulk electronic structure of the chalcopyrite CuInSe2. We calculate the ideal case and then the effect of the inclusion of the distortions. We analyze our results in detail and conclude from a comparison with other work that the distortions must be included in the Hamiltonian to get a proper account of the electronic band structure. We use our new Hamiltonian to study the effect that both the tetragonal and the anionic distortion have on the (112) surface electronic band structure. We find this effect non-negligible.
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Submitted 14 March, 2005; v1 submitted 2 March, 2005;
originally announced March 2005.
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Ferromagnetism in a (001), (110), and (111)-oriented Ru mololayer on Ag, Au, and Cu-substrates
Authors:
L. M. Garcia-Cruz,
A. V. Gaftoi,
A. Rubio-Ponce,
A. E. Garcia,
R. Baquero
Abstract:
We have studied the magnetic behavior of a 4d transition metal Ru monolayer (ML) on different substrates and orientations. In the ground state, a Ru-ML is expected to be ferromagnetic on Ag(001) and Au(001) with a magnetic moment $(μ) $ of 1.73 Bohr magnetons $(μ_{B}) $ in both cases. On Cu(001), a Ru-ML is not magnetic. In this paper, we study the magnetic behavior of a Ru-ML at other orientati…
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We have studied the magnetic behavior of a 4d transition metal Ru monolayer (ML) on different substrates and orientations. In the ground state, a Ru-ML is expected to be ferromagnetic on Ag(001) and Au(001) with a magnetic moment $(μ) $ of 1.73 Bohr magnetons $(μ_{B}) $ in both cases. On Cu(001), a Ru-ML is not magnetic. In this paper, we study the magnetic behavior of a Ru-ML at other orientations, i.e., (110) and (111). We found magnetism on Au (111), and Ag (111) ($μ\thicksim 1.3μ_{B}$ for both) but no magnetic activity on a Cu substrate in any orientation. Further, we found that on Ag(110), a Ru-ML is ferromagnetic with $μ=1.3μ_{B}$. On Au(110), a Ru-ML is not magnetic. Since on the (001) and (111) orientations a Ru-ML has about the same magnetic activity on Ag as on Au, we found surprising the behavior in the (110) orientation. We analyze it in detail in the final part of the paper. We found that there exists a metastable ferromagnetic state, in this case, and that a Ru-ML becomes ferromagnetic under a small expansion of the Au-lattice. This is not the case for Cu.
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Submitted 19 September, 2000;
originally announced September 2000.
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Van Hove Singularities around the Fermi level in YBa2Cu3O7: The importance of the chains
Authors:
A. Rubio-Ponce,
R. Baquero
Abstract:
We have reproduced band structure calculations from the literature and have used them to analyze in detail the energy landscape around the Fermi level. We found three Van Hove singularities, two below (-230, -54 meV) and one above the Fermi level (+27 meV). We have studied the composition of each one of them and found that states comming from the chain do contribute in a very importan way. The c…
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We have reproduced band structure calculations from the literature and have used them to analyze in detail the energy landscape around the Fermi level. We found three Van Hove singularities, two below (-230, -54 meV) and one above the Fermi level (+27 meV). We have studied the composition of each one of them and found that states comming from the chain do contribute in a very importan way. The contribution from the planes are indeed important and, therefore, we find that a 2D description includes the most important contributions. Nevertheless, the contribution from states out of the planes (the chains and the apical oxygen) is by no means negligable. We find that it is possible that in YBaCuO part of the condensate lies in the chains, a fact that would agree with some recent evidences concerning PrBaCuO. Our general conclusion is that the 2D description of 123-compounds might be insuficient to explain all the experimental details and that a 3D description seems compulsory to fully account for the phenomenom of superconductivity in YBaCuO.
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Submitted 12 August, 1999;
originally announced August 1999.
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Analysis of the approximations used in the van Hove-BCS theory
Authors:
D. Quesada,
A. Rubio-Ponce,
R. Pena,
R. Baquero,
C. Trallero-Giner
Abstract:
An analysis of the different approaches used within the van Hove BCS model for the high temperature superconductors has been done. How far the employment of an asymptotic expression for the density of states underestimates the thermodynamic parameters, as for example, the critical temperature, the gap at zero temperature, and the known universal ratios of the BCS model, is discussed. Analytical…
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An analysis of the different approaches used within the van Hove BCS model for the high temperature superconductors has been done. How far the employment of an asymptotic expression for the density of states underestimates the thermodynamic parameters, as for example, the critical temperature, the gap at zero temperature, and the known universal ratios of the BCS model, is discussed. Analytical expressions obtained for some thermodynamic functions are compared with the numerical results for which the exact 2D density of states has been considered. Approximate analytical expressions for the temperature dependence of the reduced gap, the superconducting electronic specific heat, and the critical magnetic field have been obtained and compared with the corresponding numerical results. The validity of the different approximations and of the equations obtained for the thermodynamic functions in the framework of the van Hove model are also analyzed.
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Submitted 6 May, 1999;
originally announced May 1999.
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Electronic structure and band gap composition-dependence of the II-VI quaternary alloys
Authors:
A. E. Garcia,
A. Zepeda-Navratil,
A. Camacho,
D. Olguin,
R. Baquero
Abstract:
Based on a successful description of II-VI ternary alloys, which introduces an empirical bowing parameter to the widely used virtual crystal approximation, we set up a tight-binding Hamiltonian to describe the Zn_{1-y}Cd_ySe_{1-x}Te_x and Zn_{.9}Cd_{.1}S_{.07}Se_{.93} quaternary alloys. We just use a formula that can be thought as a straightforward generalization of the virtual crystal approxima…
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Based on a successful description of II-VI ternary alloys, which introduces an empirical bowing parameter to the widely used virtual crystal approximation, we set up a tight-binding Hamiltonian to describe the Zn_{1-y}Cd_ySe_{1-x}Te_x and Zn_{.9}Cd_{.1}S_{.07}Se_{.93} quaternary alloys. We just use a formula that can be thought as a straightforward generalization of the virtual crystal approximation for this case. Our Hamiltonians reproduce very well the change in the band gap value with the composition observed in recent experimental reports.
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Submitted 4 December, 1996;
originally announced December 1996.
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Electronic structure of the valence band of the II--VI wide band gap binary/ternary alloy interfaces
Authors:
D. Olguin,
R. Baquero
Abstract:
We present an electronic structure calculation of the valence band for some II--VI binary/ternary alloy interfaces. We use the empirical tight-binding method and the surface Green's function matching method. For the ternary alloys we use our previously set Hamiltonians they describe well the band gap change with composition obtained experimentally. At the interface domain, we find three non-disp…
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We present an electronic structure calculation of the valence band for some II--VI binary/ternary alloy interfaces. We use the empirical tight-binding method and the surface Green's function matching method. For the ternary alloys we use our previously set Hamiltonians they describe well the band gap change with composition obtained experimentally. At the interface domain, we find three non-dispersive and two interface states besides the known bulk bands. The non-dispersive states are reminiscent of the ones already obtained experimentally as well as theoretically, in (001)-oriented surfaces. We make use of the available theoretical calculations for the (001)-oriented surfaces of the binary compounds and for the binary/binary interfaces to compare our new results with.
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Submitted 19 September, 1996;
originally announced September 1996.
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Electronic structure of the valence band of II--VI wide band gap semiconductor interfaces
Authors:
D. Olguin,
R. Baquero
Abstract:
In this work we present the electronic band structure for (001)--CdTe interfaces with some other II--VI zinc blende semiconductors. We assume ideal interfaces. We use tight binding Hamiltonians with an orthogonal basis ($s p^3 s^*$). We make use of the well--known Surface Green's Function Matching method to calculate the interface band structure. In our calculation the dominion of the interface…
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In this work we present the electronic band structure for (001)--CdTe interfaces with some other II--VI zinc blende semiconductors. We assume ideal interfaces. We use tight binding Hamiltonians with an orthogonal basis ($s p^3 s^*$). We make use of the well--known Surface Green's Function Matching method to calculate the interface band structure. In our calculation the dominion of the interface is constituted by four atomic layers. We consider here anion--anion interfaces only. We have included the non common either anion or cation (CdTe/ZnSe), common cation (CdTe/CdSe), and common anion (CdTe/ZnTe) cases. We have aligned the top of the the valence band at the whole interface dominion as the boundary condition. The overall conclusion is that the interface is a very rich space where changes in the band structure with respect to the bulk do occur. This is true not only at interfaces with no common atoms but also at the ones with either common cation or anion atoms irrespective to the fact that the common atomic layers are facing or not each other at the interface. Finally, we found that the (001)--surface--induced bulks states reappear at the interface in contrast to the pure (001)--surface resonances which disappear. This confirm our previous interpretation of such states as {\it bulk} states. Their behaviour is very interesting at the interface. We have refine the terminology for these states to up--date it to the new results and have call them {\it Frontier induced semi--infinite medium} (FISIM) states. They might well appear also in quantum wells and superlattices and have influence in the transport properties of these systems.
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Submitted 18 June, 1996;
originally announced June 1996.
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Two dimensional bulk bands and surfaces resonances originated from (100) surfaces of III-V semiconductor compounds
Authors:
Daniel Olguin,
Rafael Baquero
Abstract:
We have calculated the electronic band structure of the (100) surface of the III--V zinc blende semiconductor compounds, using the standard tight binding method and the surface Green's function matching method. We have found that the creation of the surface gives place to new states in the electronic structure: surface resonances and two dimensional bulk states. The two dimensional bulk states a…
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We have calculated the electronic band structure of the (100) surface of the III--V zinc blende semiconductor compounds, using the standard tight binding method and the surface Green's function matching method. We have found that the creation of the surface gives place to new states in the electronic structure: surface resonances and two dimensional bulk states. The two dimensional bulk states are of the same character of those reported recently in CdTe(100) [Phys. Rev. {\bf 50}, 1980 (1994)]. We analyze the states in the valence band region and compare with photoemission spectroscopy data.
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Submitted 14 June, 1996;
originally announced June 1996.
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BCS-Universal Ratios within the Van Hove Scenario
Authors:
R. Baquero,
D. Quesada,
C. Trallero-Giner
Abstract:
The central result of BCS theory are the Universal Ratios which do not depend on physical parameters of the superconductor under study. Several attempts have been made to introduce the van Hove Scenario within BCS theory but in none of them the Universal Ratios of conventional superconductivity appear to be a number independent of parameters. This fact prevents the precise definition of a deviat…
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The central result of BCS theory are the Universal Ratios which do not depend on physical parameters of the superconductor under study. Several attempts have been made to introduce the van Hove Scenario within BCS theory but in none of them the Universal Ratios of conventional superconductivity appear to be a number independent of parameters. This fact prevents the precise definition of a deviation from the BCS value for a particular superconductor. This concept is at the basis of several applications of BCS theory in characterizing conventional superconductors. We define a system that constitutes a weak coupling limit that retains the essential features of the high-Tc oxides and which does not differ in any essential way from other models widely used in generalizations of BCS theory to high-Tc superconductors. The difference is that we found a natural way of dealing with the mathematics of the problem so as to get Universal Ratios in the same sense as in conventional superconductivity.
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Submitted 3 March, 1995;
originally announced March 1995.
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(001)-Surface-induced bulk and surface states in wide band gap sincblende II-VI semiconductors
Authors:
D. Olguín,
R. Baquero
Abstract:
In a previous paper [\prb {\bf 50}, 1980 (1994)] we gave account of the nondispersive band first found experimentally at --4.4 eV for CdTe(001) by Niles and Höchst. We have characterized this band as a surface--induced bulk state. In a second paper we showed that a similar state does exist in II--VI and III--V zincblende semiconductor compounds. In this paper we show that there are more such sta…
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In a previous paper [\prb {\bf 50}, 1980 (1994)] we gave account of the nondispersive band first found experimentally at --4.4 eV for CdTe(001) by Niles and Höchst. We have characterized this band as a surface--induced bulk state. In a second paper we showed that a similar state does exist in II--VI and III--V zincblende semiconductor compounds. In this paper we show that there are more such states within the valence band energy interval. We use tight-binding hamiltonians and the surface Green's function matching method to calculate the surface and surface--induced bulk states in the wide band gap zincblende semiconductors CdTe, CdSe, ZnTe and ZnSe. We find a distinctive surface state for the cation and two for the anion termination of the (001)--surface and three (001)--surface--induced bulk states with energies that correspond to the value of the heavy hole, light hole and spin--orbit bands at $X$.
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Submitted 20 January, 1995;
originally announced January 1995.
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On the Origin of the -4.4 eV Band in CdTe(100)"
Authors:
D. Olguin,
R. Baquero
Abstract:
We calculate the bulk- (infinite system), (100)-bulk-projected- and (100)-Surface-projected Green's functions using the Surface Green's Function Matching method (SGFM) and an empirical tight-binding hamiltonian with tight-binding parameters (TBP) that describe well the bulk band structure of CdTe. In particular, we analyze the band (B--4) arising at --4.4 eV from the top of the valence band at…
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We calculate the bulk- (infinite system), (100)-bulk-projected- and (100)-Surface-projected Green's functions using the Surface Green's Function Matching method (SGFM) and an empirical tight-binding hamiltonian with tight-binding parameters (TBP) that describe well the bulk band structure of CdTe. In particular, we analyze the band (B--4) arising at --4.4 eV from the top of the valence band at $Γ$ according to the results of Niles and Höchst and at -4.6 eV according to Gawlik {\it et al.} both obtained by Angle-resolved photoelectron spectroscopy (ARPES). We give the first theoretical description of this band.
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Submitted 16 March, 1994;
originally announced March 1994.
