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Tungsten doping of Ta3N5-Nanotubes for Band Gap Narrowing and Enhanced Photoelectrochemical Water Splitting Efficiency
Abstract: Ordered W-doped Ta2O5 nanotube arrays were grown by self-organizing electrochemical anodization of TaW alloys with different tungsten concentrations and by a suitable high temperature ammonia treatment, fully converted to W:Ta3N5 tubular structures. A main effect found is that W doping can decrease the band gap from 2 eV (bare Ta3N5) down to 1.75 eV. Ta3N5 nanotubes grown on 0.5 at% W alloy and mo… ▽ More
Submitted 14 October, 2016; originally announced October 2016.
Journal ref: Electrochemistry Communications, Volume 51, February 2015, Pages 85 to 88