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Pixel column issue in the ATLAS Inner Tracker modules
Authors:
L. Meng,
R. Bates,
C. Buttar,
G. Calderini,
F. Crescioli,
L. Cunningham,
Y. Dieter,
R. Han,
T. Heim,
S. Hirose,
F. Huegging,
C. Hultquist,
D. Kim,
A. Korn,
M. Marjanovic,
J. Metcalfe,
K. Nakamura,
J. Pater,
H. Pernegger,
M. A. A. Samy,
M. Schuessler,
A. Sharma,
E. Thompson,
M. Backhaus,
J. Christiansen
, et al. (1 additional authors not shown)
Abstract:
Pixel modules are currently being built for the ATLAS ITk Pixel detector upgrade. During the preproduction phase, recurring chip malfunctioning was observed during electrical testing. It was possible to bypass this issue by disabling some pixel core columns in the ITkPix readout chip. Therefore the issue is called "core column issue" which is a direct disqualifier for a pixel module. A concerning…
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Pixel modules are currently being built for the ATLAS ITk Pixel detector upgrade. During the preproduction phase, recurring chip malfunctioning was observed during electrical testing. It was possible to bypass this issue by disabling some pixel core columns in the ITkPix readout chip. Therefore the issue is called "core column issue" which is a direct disqualifier for a pixel module. A concerning number of cases has been observed in pixel modules with ITkPix v1.1 as well as v2 chips which significantly impacts the module yield. However, the behaviour is erratic and there is not any evidence hinting at the origin of this issue. These proceedings outline the investigations of the issue, highlighting the electrical behaviour during testing, present findings from the data collected via our production database and through visual inspection, and point towards possible causes of the issue.
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Submitted 27 May, 2025; v1 submitted 15 May, 2025;
originally announced May 2025.
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Characterization of irradiated RD53A pixel modules with passive CMOS sensors
Authors:
A. Jofrehei,
M. Backhaus,
P. Baertschi,
F. Canelli,
F. Glessgen,
W. Jin,
B. Kilminster,
A. Macchiolo,
A. Reimers,
B. Ristic,
R. Wallny
Abstract:
We are investigating the feasibility of using CMOS foundries to fabricate silicon detectors, both for pixels and for large-area strip sensors. The availability of multi-layer routing will provide the freedom to optimize the sensor geometry and the performance, with biasing structures in poly-silicon layers and MIM-capacitors allowing for AC coupling. A prototyping production of strip test-structur…
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We are investigating the feasibility of using CMOS foundries to fabricate silicon detectors, both for pixels and for large-area strip sensors. The availability of multi-layer routing will provide the freedom to optimize the sensor geometry and the performance, with biasing structures in poly-silicon layers and MIM-capacitors allowing for AC coupling. A prototyping production of strip test-structures and RD53A compatible pixel sensors was recently completed at LFoundry in a 150$\,$nm CMOS process. This paper will focus on the characterization of irradiated and non-irradiated pixel modules, composed by a CMOS passive sensor interconnected to a RD53A chip. The sensors are designed with a pixel cell of $25\times100\,μ\mathrm{m}^2$ in case of DC coupled devices and $50\times50\,μ\mathrm{m}^2$ for the AC coupled ones. Their performance in terms of charge collection, position resolution, and hit efficiency was studied with measurements performed in the laboratory and with beam tests. The RD53A modules with LFoundry silicon sensors were irradiated to fluences up to $1.0\times10^{16}\,\frac{\mathrm{n}_\mathrm{eq}}{\mathrm{cm}^2}$.
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Submitted 21 March, 2022;
originally announced March 2022.
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Search for the muon electric dipole moment using frozen-spin technique at PSI
Authors:
K. S. Khaw,
A. Adelmann,
M. Backhaus,
N. Berger,
M. Daum,
M. Giovannozzi,
K. Kirch,
A. Knecht,
A. Papa,
C. Petitjean,
F. Renga,
M. Sakurai,
P. Schmidt-Wellenburg
Abstract:
The presence of a permanent electric dipole moment in an elementary particle implies Charge-Parity symmetry violation and thus could help explain the matter-antimatter asymmetry observed in our universe. Within the context of the Standard Model, the electric dipole moment of elementary particles is extremely small. However, many Standard Model extensions such as supersymmetry predict large electri…
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The presence of a permanent electric dipole moment in an elementary particle implies Charge-Parity symmetry violation and thus could help explain the matter-antimatter asymmetry observed in our universe. Within the context of the Standard Model, the electric dipole moment of elementary particles is extremely small. However, many Standard Model extensions such as supersymmetry predict large electric dipole moments. Recently, the muon electric dipole moment has become a topic of particular interest due to the tensions in the magnetic anomaly of the muon and the electron, and hints of lepton-flavor universality violation in B-meson decays. In this article, we discuss a dedicated effort at the Paul Scherrer Institute in Switzerland to search for the muon electric dipole moment using a 3-T compact solenoid storage ring and the frozen-spin technique. This technique could reach a sensitivity of $6\times10^{-23}$ $e\cdot$cm after a year of data taking with the $p=125$ MeV/$c$ muon beam at the Paul Scherrer Institute. This allows us to probe various Standard Model extensions not reachable by traditional searches using muon $g-2$ storage rings.
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Submitted 24 January, 2022; v1 submitted 21 January, 2022;
originally announced January 2022.
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muEDM: Towards a search for the muon electric dipole moment at PSI using the frozen-spin technique
Authors:
Mikio Sakurai,
Andreas Adelmann,
Malte Backhaus,
Niklaus Berger,
Manfred Daum,
Kim Siang Khaw,
Klaus Kirch,
Andreas Knecht,
Angela Papa,
Claude Petitjean,
Philipp Schmidt-Wellenburg
Abstract:
The search for a permanent electric dipole moment (EDM) of the muon is an excellent probe for physics beyond the Standard Model of particle physics. We propose the first dedicated muon EDM search employing the frozen-spin technique at the Paul Scherrer Institute (PSI), Switzerland, with a sensitivity of $6 \times 10^{-23}~e\!\cdot\!\mathrm{cm}$, improving the current best limit set by the E821 exp…
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The search for a permanent electric dipole moment (EDM) of the muon is an excellent probe for physics beyond the Standard Model of particle physics. We propose the first dedicated muon EDM search employing the frozen-spin technique at the Paul Scherrer Institute (PSI), Switzerland, with a sensitivity of $6 \times 10^{-23}~e\!\cdot\!\mathrm{cm}$, improving the current best limit set by the E821 experiment at Brookhaven National Laboratory by more than three orders of magnitude. In preparation for a high precision experiment to measure the muon EDM, several R&D studies have been performed at PSI: the characterisation of a possible beamline to host the experiment for the muon beam injection study and the measurement of the multiple Coulomb scattering of positrons in potential detector materials at low momenta for the positron tracking scheme development. This paper discusses experimental concepts and the current status of the muEDM experiment at PSI.
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Submitted 31 January, 2022; v1 submitted 17 January, 2022;
originally announced January 2022.
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Characterization of passive CMOS sensors with RD53A pixel modules
Authors:
Franz Glessgen,
Malte Backhaus,
Florencia Canelli,
Yannick Manuel Dieter,
Jochen Christian Dingfelder,
Tomasz Hemperek,
Fabian Huegging,
Arash Jofrehei,
Weijie Jin,
Ben Kilminster,
Anna Macchiolo,
Daniel Muenstermann,
David-Leon Pohl,
Branislav Ristic,
Rainer Wallny,
Tianyang Wang,
Norbert Wermes,
Pascal Wolf
Abstract:
Both the current upgrades to accelerator-based HEP detectors (e.g. ATLAS, CMS) and also future projects (e.g. CEPC, FCC) feature large-area silicon-based tracking detectors. We are investigating the feasibility of using CMOS foundries to fabricate silicon radiation detectors, both for pixels and for large-area strip sensors. A successful proof of concept would open the market potential of CMOS fou…
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Both the current upgrades to accelerator-based HEP detectors (e.g. ATLAS, CMS) and also future projects (e.g. CEPC, FCC) feature large-area silicon-based tracking detectors. We are investigating the feasibility of using CMOS foundries to fabricate silicon radiation detectors, both for pixels and for large-area strip sensors. A successful proof of concept would open the market potential of CMOS foundries to the HEP community, which would be most beneficial in terms of availability, throughput and cost. In addition, the availability of multi-layer routing of signals will provide the freedom to optimize the sensor geometry and the performance, with biasing structures implemented in poly-silicon layers and MIM-capacitors allowing for AC coupling. A prototyping production of strip test structures and RD53A compatible pixel sensors was recently completed at LFoundry in a 150nm CMOS process. This presentation will focus on the characterization of pixel modules, studying the performance in terms of charge collection, position resolution and hit efficiency with measurements performed in the laboratory and with beam tests. We will report on the investigation of RD53A modules with 25x100 mu^2 cell geometry.
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Submitted 15 November, 2021;
originally announced November 2021.
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Search for a muon EDM using the frozen-spin technique
Authors:
A. Adelmann,
M. Backhaus,
C. Chavez Barajas,
N. Berger,
T. Bowcock,
C. Calzolaio,
G. Cavoto,
R. Chislett,
A. Crivellin,
M. Daum,
M. Fertl,
M. Giovannozzi,
G. Hesketh,
M. Hildebrandt,
I. Keshelashvili,
A. Keshavarzi,
K. S. Khaw,
K. Kirch,
A. Kozlinskiy,
A. Knecht,
M. Lancaster,
B. Märkisch,
F. Meier Aeschbacher,
F. Méot,
A. Nass
, et al. (13 additional authors not shown)
Abstract:
This letter of intent proposes an experiment to search for an electric dipole moment of the muon based on the frozen-spin technique. We intend to exploit the high electric field, $E=1{\rm GV/m}$, experienced in the rest frame of the muon with a momentum of $p=125 {\rm MeV/}c$ when passing through a large magnetic field of $|\vec{B}|=3{\rm T}$. Current muon fluxes at the $μ$E1 beam line permit an i…
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This letter of intent proposes an experiment to search for an electric dipole moment of the muon based on the frozen-spin technique. We intend to exploit the high electric field, $E=1{\rm GV/m}$, experienced in the rest frame of the muon with a momentum of $p=125 {\rm MeV/}c$ when passing through a large magnetic field of $|\vec{B}|=3{\rm T}$. Current muon fluxes at the $μ$E1 beam line permit an improved search with a sensitivity of $σ(d_μ)\leq 6\times10^{-23}e{\rm cm}$, about three orders of magnitude more sensitivity than for the current upper limit of $|d_μ|\leq1.8\times10^{-19}e{\rm cm}$\,(C.L. 95\%). With the advent of the new high intensity muon beam, HIMB, and the cold muon source, muCool, at PSI the sensitivity of the search could be further improved by tailoring a re-acceleration scheme to match the experiments injection phase space. While a null result would set a significantly improved upper limit on an otherwise un-constrained Wilson coefficient, the discovery of a muon EDM would corroborate the existence of physics beyond the Standard Model.
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Submitted 17 February, 2021;
originally announced February 2021.
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Production and Integration of the ATLAS Insertable B-Layer
Authors:
B. Abbott,
J. Albert,
F. Alberti,
M. Alex,
G. Alimonti,
S. Alkire,
P. Allport,
S. Altenheiner,
L. Ancu,
E. Anderssen,
A. Andreani,
A. Andreazza,
B. Axen,
J. Arguin,
M. Backhaus,
G. Balbi,
J. Ballansat,
M. Barbero,
G. Barbier,
A. Bassalat,
R. Bates,
P. Baudin,
M. Battaglia,
T. Beau,
R. Beccherle
, et al. (352 additional authors not shown)
Abstract:
During the shutdown of the CERN Large Hadron Collider in 2013-2014, an additional pixel layer was installed between the existing Pixel detector of the ATLAS experiment and a new, smaller radius beam pipe. The motivation for this new pixel layer, the Insertable B-Layer (IBL), was to maintain or improve the robustness and performance of the ATLAS tracking system, given the higher instantaneous and i…
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During the shutdown of the CERN Large Hadron Collider in 2013-2014, an additional pixel layer was installed between the existing Pixel detector of the ATLAS experiment and a new, smaller radius beam pipe. The motivation for this new pixel layer, the Insertable B-Layer (IBL), was to maintain or improve the robustness and performance of the ATLAS tracking system, given the higher instantaneous and integrated luminosities realised following the shutdown. Because of the extreme radiation and collision rate environment, several new radiation-tolerant sensor and electronic technologies were utilised for this layer. This paper reports on the IBL construction and integration prior to its operation in the ATLAS detector.
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Submitted 6 June, 2018; v1 submitted 2 March, 2018;
originally announced March 2018.
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Parametrization of the radiation induced leakage current increase of NMOS transistors
Authors:
Malte Backhaus
Abstract:
The increase of the leakage current of NMOS transistors during exposure to ionizing radiation is known and well studied. Radiation hardness by design techniques have been developed to mitigate this effect and have been successfully used. More recent developments in smaller feature size technologies do not make use of these techniques due to their drawbacks in terms of logic density and requirement…
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The increase of the leakage current of NMOS transistors during exposure to ionizing radiation is known and well studied. Radiation hardness by design techniques have been developed to mitigate this effect and have been successfully used. More recent developments in smaller feature size technologies do not make use of these techniques due to their drawbacks in terms of logic density and requirement of dedicated libraries. During operation the resulting increase of the supply current is a serious challenge and needs to be considered during the system design.
A simple parametrization of the leakage current of NMOS transistors as a function of total ionizing dose is presented. The parametrization uses a transistor transfer characteristics of the parasitic transistor along the shallow trench isolation to describe the leakage current of the nominal transistor. Together with a parametrization of the number of positive charges trapped in the silicon dioxide and number of activated interface traps in the silicon to silicon dioxide interface the leakage current as a function of the exposure time to ionizing radiation results. This function is fitted to data of the leakage current of single transistors as well as to data of the supply current of full ASICs.
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Submitted 6 October, 2016;
originally announced October 2016.
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Characterization of the FE-I4B pixel readout chip production run for the ATLAS Insertable B-layer upgrade
Authors:
Malte Backhaus
Abstract:
The Insertable B-layer (IBL) is a fourth pixel layer that will be added inside the existing ATLAS pixel detector during the long LHC shutdown of 2013 and 2014. The new four layer pixel system will ensure excellent tracking, vertexing and b-tagging performance in the high luminosity pile-up conditions projected for the next LHC run. The peak luminosity is expected to reach 3 x 10^34 cm^-2 s^-1 with…
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The Insertable B-layer (IBL) is a fourth pixel layer that will be added inside the existing ATLAS pixel detector during the long LHC shutdown of 2013 and 2014. The new four layer pixel system will ensure excellent tracking, vertexing and b-tagging performance in the high luminosity pile-up conditions projected for the next LHC run. The peak luminosity is expected to reach 3 x 10^34 cm^-2 s^-1 with an integrated luminosity over the IBL lifetime of 300 fb^-1 corresponding to a design lifetime fluence of 5 x 10^15 n_eq cm^-2 and ionizing dose of 250 Mrad including safety factors. The production front-end electronics FE-I4B for the IBL has been fabricated at the end of 2011 and has been extensively characterized on diced ICs as well as at the wafer level. The production tests at the wafer level were performed during 2012. Selected results of the diced IC characterization are presented, including measurements of the on-chip voltage regulators. The IBL powering scheme, which was chosen based on these results, is described. Preliminary wafer to wafer distributions as well as yield calculations are given.
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Submitted 16 April, 2013;
originally announced April 2013.
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Characterization of new hybrid pixel module concepts for the ATLAS Insertable B-Layer upgrade
Authors:
Malte Backhaus
Abstract:
The ATLAS Insertable B-Layer (IBL) collaboration plans to insert a fourth pixel layer inside the present Pixel Detector to recover from eventual failures in the current pixel system, especially the b-layer. Additionally the IBL will ensure excellent tracking, vertexing and b-tagging performance during the LHC phase I and add robustness in tracking with high luminosity pile-up. The expected peak lu…
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The ATLAS Insertable B-Layer (IBL) collaboration plans to insert a fourth pixel layer inside the present Pixel Detector to recover from eventual failures in the current pixel system, especially the b-layer. Additionally the IBL will ensure excellent tracking, vertexing and b-tagging performance during the LHC phase I and add robustness in tracking with high luminosity pile-up. The expected peak luminosity for IBL is 2 to 3centerdot1034 cm-2s-1 and IBL is designed for an integrated luminosity of 700 fb-1. This corresponds to an expected fluence of 5centerdot1015 1 MeV neqcm-2 and a total ionizing dose of 250 MRad. In order to cope with these requirements, two new module concepts are under investigation, both based on a new front end IC, called FE-I4. This IC was designed as readout chip for future ATLAS Pixel Detectors and its first application will be the IBL. The planar pixel sensor (PPS) based module concept benefits from its well understood design, which is kept as similar as possible to the design of the current ATLAS Pixel Detector sensor. The second approach of the new three dimensional (3D) silicon sensor technology benefits from the shorter charge carrier drift distance to the electrodes, which completely penetrate the sensor bulk. Prototype modules of both sensor concepts have been build and tested in laboratory and test beam environment before and after irradiation. Both concepts show very high performance even after irradiation to 5centerdot1015 1 MeV neqcm-2 and meet the IBL specifications in terms of hit efficiency being larger than 97%. Lowest operational threshold studies have been effected and prove independent of the used sensor concept the excellent performance of FE-I4 based module concepts in terms of noise hit occupancy at low thresholds.
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Submitted 16 February, 2012;
originally announced February 2012.
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Scaling in the Integer Quantum Hall Effect: interactions and low magnetic fields
Authors:
Bodo Huckestein,
Michael Backhaus
Abstract:
Recent developments in the scaling theory of the integer quantum Hall effect are discussed. In particular, the influence of electron-electron interactions on the critical behavior are studied. It is further argued that recent experiments on the disappearance of the quantum Hall effect at low magnetic fields support rather than disprove the scaling theory, when interpreted properly.
Recent developments in the scaling theory of the integer quantum Hall effect are discussed. In particular, the influence of electron-electron interactions on the critical behavior are studied. It is further argued that recent experiments on the disappearance of the quantum Hall effect at low magnetic fields support rather than disprove the scaling theory, when interpreted properly.
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Submitted 11 April, 2000;
originally announced April 2000.
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Coulomb gap in the quantum Hall insulator
Authors:
Michael Backhaus,
Bodo Huckestein
Abstract:
We calculate numerically the spectrum of disordered electrons in the lowest Landau level at filling factor 1/5 using the self-consistent Hartree-Fock approximation for systems containing up to 400 flux quanta. Special attention is paid to the correct treatment of the q=0 component of the Coulomb interaction. For sufficiently strong disorder, the system is an insulator at this filling factor. We…
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We calculate numerically the spectrum of disordered electrons in the lowest Landau level at filling factor 1/5 using the self-consistent Hartree-Fock approximation for systems containing up to 400 flux quanta. Special attention is paid to the correct treatment of the q=0 component of the Coulomb interaction. For sufficiently strong disorder, the system is an insulator at this filling factor. We observe numerically a Coulomb gap in the single-particle density of states (DOS). The DOS agrees quantitatively with the predictions for classical point charges.
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Submitted 7 April, 2000;
originally announced April 2000.
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Integer quantum Hall effect of interacting electrons: dynamical scaling and critical conductivity
Authors:
Bodo Huckestein,
Michael Backhaus
Abstract:
We report on a study of interaction effects on the polarization of a disordered two-dimensional electron system in a strong magnetic field. Treating the Coulomb interaction within the time-dependent Hartree-Fock approximation we find numerical evidence for dynamical scaling with a dynamical critical exponent z=1 at the integer quantum Hall plateau transition in the lowest Landau level. Within th…
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We report on a study of interaction effects on the polarization of a disordered two-dimensional electron system in a strong magnetic field. Treating the Coulomb interaction within the time-dependent Hartree-Fock approximation we find numerical evidence for dynamical scaling with a dynamical critical exponent z=1 at the integer quantum Hall plateau transition in the lowest Landau level. Within the numerical accuracy of our data the conductivity at the transition and the anomalous diffusion exponent are given by the values for non-interacting electrons, independent of the strength of the interaction.
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Submitted 6 June, 1999; v1 submitted 3 July, 1998;
originally announced July 1998.
