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Purcell-Enhanced Single Photons at Telecom Wavelengths from a Quantum Dot in a Photonic Crystal Cavity
Authors:
Catherine L. Phillips,
Alistair J. Brash,
Max Godsland,
Nicholas J. Martin,
Andrew Foster,
Anna Tomlinson,
Rene Dost,
Nasser Babazadeh,
Elisa M. Sala,
Luke Wilson,
Jon Heffernan,
Maurice S. Skolnick,
A. Mark Fox
Abstract:
Quantum dots are promising candidates for telecom single photon sources due to their tunable emission across the different low-loss telecommunications bands, making them compatible with existing fiber networks. Their suitability for integration into photonic structures allows for enhanced brightness through the Purcell effect, supporting efficient quantum communication technologies. Our work focus…
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Quantum dots are promising candidates for telecom single photon sources due to their tunable emission across the different low-loss telecommunications bands, making them compatible with existing fiber networks. Their suitability for integration into photonic structures allows for enhanced brightness through the Purcell effect, supporting efficient quantum communication technologies. Our work focuses on InAs/InP QDs created via droplet epitaxy MOVPE to operate within the telecoms C-band. We observe a short radiative lifetime of 340 ps, arising from a Purcell factor of 5, owing to interaction of the QD within a low-mode-volume photonic crystal cavity. Through in-situ control of the sample temperature, we show both temperature tuning of the QD's emission wavelength and a preserved single photon emission purity at temperatures up to 25K. These findings suggest the viability of QD-based, cryogen-free, C-band single photon sources, supporting applicability in quantum communication technologies.
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Submitted 30 October, 2023;
originally announced October 2023.
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1.5 μm Epitaxially Regrown Photonic Crystal Surface Emitting Laser Diode
Authors:
Zijun Bian,
Katherine J. Rae,
Adam F. McKenzie,
Ben C. King,
Nasser Babazadeh,
Guangrui Li,
Jonathan R. Orchard,
Neil D. Gerrard,
Stephen Thoms,
Donald A. McLaren,
Richard J. E. Taylor,
David Childs,
Richard A. Hogg
Abstract:
We present an InP-based epitaxially regrown photonic crystal surface emitting laser diode, lasing in quasi- CW conditions at 1523nm.
We present an InP-based epitaxially regrown photonic crystal surface emitting laser diode, lasing in quasi- CW conditions at 1523nm.
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Submitted 19 October, 2020;
originally announced October 2020.
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Charge control in InP/GaInP single quantum dots embedded in Schottky diodes
Authors:
O. D. D. Couto Jr.,
J. Puebla,
E. A. Chekhovich,
I. J. Luxmoore,
C. J. Elliott,
N. Babazadeh,
M. S. Skolnick,
A. I. Tartakovskii,
A. B. Krysa
Abstract:
We demonstrate control by applied electric field of the charge states in single self-assembled InP quantum dots placed in GaInP Schottky structures grown by metalorganic vapor phase epitaxy. This has been enabled by growth optimization leading to suppression of formation of large dots uncontrollably accumulating charge. Using bias- and polarization-dependent micro-photoluminescence, we identify th…
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We demonstrate control by applied electric field of the charge states in single self-assembled InP quantum dots placed in GaInP Schottky structures grown by metalorganic vapor phase epitaxy. This has been enabled by growth optimization leading to suppression of formation of large dots uncontrollably accumulating charge. Using bias- and polarization-dependent micro-photoluminescence, we identify the exciton multi-particle states and carry out a systematic study of the neutral exciton state dipole moment and polarizability. This analysis allows for the characterization of the exciton wavefunction properties at the single dot level for this type of quantum dots. Photocurrent measurements allow further characterization of exciton properties by electrical means, opening new possibilities for resonant excitation studies for such system.
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Submitted 13 July, 2011;
originally announced July 2011.
