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Showing 1–5 of 5 results for author: Aull, T

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  1. arXiv:2202.06752  [pdf, other

    cond-mat.mtrl-sci cond-mat.mes-hall physics.app-ph

    $Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect

    Authors: T. Aull, E. Şaşıoğlu, N. F. Hinsche, I. Mertig

    Abstract: Magnetic tunnel junctions (MTJs) have attracted strong research interest within the last decades due to their potential use as nonvolatile memory such as MRAM as well as for magnetic logic applications. Half-metallic magnets (HMMs) have been suggested as ideal electrode materials for MTJs to achieve an extremely large tunnel-magnetoresistance (TMR) effect. Despite their high TMR ratios, MTJs based… ▽ More

    Submitted 2 September, 2022; v1 submitted 14 February, 2022; originally announced February 2022.

    Comments: 14+7 pages, 7+10 figures

  2. arXiv:2111.03351  [pdf, other

    cond-mat.mes-hall cond-mat.mtrl-sci

    Externally controlled and switchable 2D electron gas at the Rashba interface between ferroelectrics and heavy $d$ metals

    Authors: Thorsten Aull, Igor V. Maznichenko, Sergey Ostanin, Ersoy Şaşıoğlu, Ingrid Mertig

    Abstract: Strong spin-orbit coupling in noncentrosymmetric materials and interfaces results in remarkable physical phenomena, such as nontrivial spin textures, which may exhibit Rashba, Dresselhaus, and other intricated configurations. This provides a promising basis for nonvolatile spintronic devices and further implications. Here, we simulate from first principles a two-dimensional electron gas in ultrath… ▽ More

    Submitted 8 November, 2021; v1 submitted 5 November, 2021; originally announced November 2021.

    Comments: 12 pages, 11 figures

    Journal ref: Phys. Rev. Research 3, 043110 (2021)

  3. arXiv:2102.01919  [pdf, other

    cond-mat.mtrl-sci cond-mat.mes-hall

    First principles design of Ohmic spin diodes based on quaternary Heusler compounds

    Authors: T. Aull, E. Şaşıoğlu, I. Mertig

    Abstract: The Ohmic spin diode (OSD) is a recent concept in spintronics, which is based on half-metallic magnets (HMMs) and spin-gapless semiconductors (SGSs). Quaternary Heusler compounds offer a unique platform to realize the OSD for room temperature applications as these materials possess very high Curie temperatures as well as half-metallic and spin-gapless semiconducting behavior within the same family… ▽ More

    Submitted 3 February, 2021; originally announced February 2021.

    Comments: 7 pages, 5 figures

    Journal ref: Appl. Phys. Lett. 118, 052405 (2021)

  4. arXiv:2009.10463  [pdf, other

    cond-mat.mtrl-sci cond-mat.mes-hall

    Half-Metal Spin-Gapless Semiconductor Junctions as a Route to the Ideal Diode

    Authors: E. Şaşıoğlu, T. Aull, D. Kutschabsky, S. Blügel, I. Mertig

    Abstract: The ideal diode is a theoretical concept that completely conducts the electric current under forward bias without any loss and that behaves like a perfect insulator under reverse bias. However, real diodes have a junction barrier that electrons have to overcome and thus they have a threshold voltage $V_T$, which must be supplied to the diode to turn it on. This threshold voltage gives rise to powe… ▽ More

    Submitted 22 September, 2020; originally announced September 2020.

    Comments: 12 pages, 9 figures

    Journal ref: Phys. Rev. Applied 14, 014082 (2020)

  5. Ab initio design of quaternary Heusler compounds for reconfigurable magnetic tunnel diodes and transistors

    Authors: T. Aull, E. Şaşıoğlu, I. V. Maznichenko, S. Ostanin, A. Ernst, I. Mertig, I. Galanakis

    Abstract: Reconfigurable magnetic tunnel diodes and transistors are a new concept in spintronics. The realization of such a device requires the use of materials with unique spin-dependent electronic properties such as half-metallic magnets (HMMs) and spin-gapless semiconductors (SGSs). Quaternary Heusler compounds offer a unique platform to design within the same family of compounds HMMs and SGSs with simil… ▽ More

    Submitted 20 January, 2020; originally announced January 2020.

    Comments: 13 pages, 9 figures

    Journal ref: Phys. Rev. Materials 3, 124415 (2019)