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Optimal Approximate Polytope Membership
Authors:
Sunil Arya,
Guilherme D. da Fonseca,
David M. Mount
Abstract:
In the polytope membership problem, a convex polytope $K$ in $R^d$ is given, and the objective is to preprocess $K$ into a data structure so that, given a query point $q \in R^d$, it is possible to determine efficiently whether $q \in K$. We consider this problem in an approximate setting and assume that $d$ is a constant. Given an approximation parameter $\varepsilon > 0$, the query can be answer…
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In the polytope membership problem, a convex polytope $K$ in $R^d$ is given, and the objective is to preprocess $K$ into a data structure so that, given a query point $q \in R^d$, it is possible to determine efficiently whether $q \in K$. We consider this problem in an approximate setting and assume that $d$ is a constant. Given an approximation parameter $\varepsilon > 0$, the query can be answered either way if the distance from $q$ to $K$'s boundary is at most $\varepsilon$ times $K$'s diameter. Previous solutions to the problem were on the form of a space-time trade-off, where logarithmic query time demands $O(1/\varepsilon^{d-1})$ storage, whereas storage $O(1/\varepsilon^{(d-1)/2})$ admits roughly $O(1/\varepsilon^{(d-1)/8})$ query time. In this paper, we present a data structure that achieves logarithmic query time with storage of only $O(1/\varepsilon^{(d-1)/2})$, which matches the worst-case lower bound on the complexity of any $\varepsilon$-approximating polytope. Our data structure is based on a new technique, a hierarchy of ellipsoids defined as approximations to Macbeath regions.
As an application, we obtain major improvements to approximate Euclidean nearest neighbor searching. Notably, the storage needed to answer $\varepsilon$-approximate nearest neighbor queries for a set of $n$ points in $O(\log \frac{n}{\varepsilon})$ time is reduced to $O(n/\varepsilon^{d/2})$. This halves the exponent in the $\varepsilon$-dependency of the existing space bound of roughly $O(n/\varepsilon^d)$, which has stood for 15 years (Har-Peled, 2001).
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Submitted 6 December, 2016;
originally announced December 2016.
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Exploring Novel Quantum Criticality in Strained Graphene
Authors:
S. Arya,
M. S. Laad,
S. R. Hassan
Abstract:
Strain tuning is increasingly being recognized as a clean tuning parameter to induce novel behavior in quantum matter. Motivated by the possibility of straining graphene up to $20$ percent, we investigate novel quantum criticality due to interplay between strain-induced anisotropic band structure and critical antiferromagnetic spin fluctuations (AFSF) in this setting. We detail how this interplay…
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Strain tuning is increasingly being recognized as a clean tuning parameter to induce novel behavior in quantum matter. Motivated by the possibility of straining graphene up to $20$ percent, we investigate novel quantum criticality due to interplay between strain-induced anisotropic band structure and critical antiferromagnetic spin fluctuations (AFSF) in this setting. We detail how this interplay drives $(i)$ a quantum phase transition (QPT) between the Dirac-semimetal-incoherent pseudogapped metal-correlated insulator as a function of strain ($ε$), and $(ii)$ critical AFSF-driven divergent nematic susceptibility near critical strain ($ε_{c}$) manifesting as critical singularities in magneto-thermal expansion and Grüneisen co-efficients. The correlated band insulator at large strain affords realization of a two-dimensional dimerized spin-singlet state due to this interplay, and we argue how doping such an insulator can lead to a spin-charge separated metal, leading to anomalous metallicity and possible unconventional superconductivity. On a wider front, our work serves to illustrate the range of novel states realizable by strain-tuning quantum materials.
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Submitted 14 November, 2016;
originally announced November 2016.
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Relativistic nature of carriers: Origin of electron-hole conduction asymmetry in m o n o l a ye r gr a p h e n e
Authors:
Pawan Kumar Srivastava,
Swasti Arya,
Santosh Kumar,
Subhasis Ghosh
Abstract:
We report electron-hole conduction asymmetry in monolayer graphene. Previously, it has been claimed that electron-hole conduction asymmetry is due to imbalanced carrier injection from metallic electrodes. Here, we show that metallic contacts have negligible impact on asymmetric conduction and may be either sample or device-dependent phenomena. Electrical measurements show that monolayer graphene b…
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We report electron-hole conduction asymmetry in monolayer graphene. Previously, it has been claimed that electron-hole conduction asymmetry is due to imbalanced carrier injection from metallic electrodes. Here, we show that metallic contacts have negligible impact on asymmetric conduction and may be either sample or device-dependent phenomena. Electrical measurements show that monolayer graphene based devices exhibit suppressed electron conduction compared to hole conduction due to the presence of donor impurities which scatter electrons more efficiently. This can be explained by the relativistic nature of charge carriers in a graphene monolayer and can be reconciled with the fact that in a relativistic quantum system transport cross section does depend on the sign of scattering potential in contrast to a nonrelativistic quantum system.
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Submitted 16 December, 2017; v1 submitted 20 August, 2016;
originally announced August 2016.
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Approximate Polytope Membership Queries
Authors:
Sunil Arya,
Guilherme D. da Fonseca,
David M. Mount
Abstract:
In the polytope membership problem, a convex polytope $K$ in $\mathbb{R}^d$ is given, and the objective is to preprocess $K$ into a data structure so that, given any query point $q \in \mathbb{R}^d$, it is possible to determine efficiently whether $q \in K$. We consider this problem in an approximate setting. Given an approximation parameter $\varepsilon$, the query can be answered either way if t…
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In the polytope membership problem, a convex polytope $K$ in $\mathbb{R}^d$ is given, and the objective is to preprocess $K$ into a data structure so that, given any query point $q \in \mathbb{R}^d$, it is possible to determine efficiently whether $q \in K$. We consider this problem in an approximate setting. Given an approximation parameter $\varepsilon$, the query can be answered either way if the distance from $q$ to $K$'s boundary is at most $\varepsilon$ times $K$'s diameter. We assume that the dimension $d$ is fixed, and $K$ is presented as the intersection of $n$ halfspaces. Previous solutions to approximate polytope membership were based on straightforward applications of classic polytope approximation techniques by Dudley (1974) and Bentley et al. (1982). The former is optimal in the worst-case with respect to space, and the latter is optimal with respect to query time.
We present four main results. First, we show how to combine the two above techniques to obtain a simple space-time trade-off. Second, we present an algorithm that dramatically improves this trade-off. In particular, for any constant $α\ge 4$, this data structure achieves query time $O(1/\varepsilon^{(d-1)/α})$ and space roughly $O(1/\varepsilon^{(d-1)(1 - O(\log α)/α)})$. We do not know whether this space bound is tight, but our third result shows that there is a convex body such that our algorithm achieves a space of at least $Ω( 1/\varepsilon^{(d-1)(1-O(\sqrtα)/α} )$. Our fourth result shows that it is possible to reduce approximate Euclidean nearest neighbor searching to approximate polytope membership queries. Combined with the above results, this provides significant improvements to the best known space-time trade-offs for approximate nearest neighbor searching in $\mathbb{R}^d$.
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Submitted 26 June, 2017; v1 submitted 5 April, 2016;
originally announced April 2016.
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On the Combinatorial Complexity of Approximating Polytopes
Authors:
Sunil Arya,
Guilherme D. da Fonseca,
David M. Mount
Abstract:
Approximating convex bodies succinctly by convex polytopes is a fundamental problem in discrete geometry. A convex body $K$ of diameter $\mathrm{diam}(K)$ is given in Euclidean $d$-dimensional space, where $d$ is a constant. Given an error parameter $\varepsilon > 0$, the objective is to determine a polytope of minimum combinatorial complexity whose Hausdorff distance from $K$ is at most…
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Approximating convex bodies succinctly by convex polytopes is a fundamental problem in discrete geometry. A convex body $K$ of diameter $\mathrm{diam}(K)$ is given in Euclidean $d$-dimensional space, where $d$ is a constant. Given an error parameter $\varepsilon > 0$, the objective is to determine a polytope of minimum combinatorial complexity whose Hausdorff distance from $K$ is at most $\varepsilon \cdot \mathrm{diam}(K)$. By combinatorial complexity we mean the total number of faces of all dimensions of the polytope. A well-known result by Dudley implies that $O(1/\varepsilon^{(d-1)/2})$ facets suffice, and a dual result by Bronshteyn and Ivanov similarly bounds the number of vertices, but neither result bounds the total combinatorial complexity. We show that there exists an approximating polytope whose total combinatorial complexity is $\tilde{O}(1/\varepsilon^{(d-1)/2})$, where $\tilde{O}$ conceals a polylogarithmic factor in $1/\varepsilon$. This is a significant improvement upon the best known bound, which is roughly $O(1/\varepsilon^{d-2})$.
Our result is based on a novel combination of both old and new ideas. First, we employ Macbeath regions, a classical structure from the theory of convexity. The construction of our approximating polytope employs a new stratified placement of these regions. Second, in order to analyze the combinatorial complexity of the approximating polytope, we present a tight analysis of a width-based variant of Bárány and Larman's economical cap covering. Finally, we use a deterministic adaptation of the witness-collector technique (developed recently by Devillers et al.) in the context of our stratified construction.
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Submitted 21 December, 2016; v1 submitted 5 April, 2016;
originally announced April 2016.
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Antiferromagnetism in the Hubbard model on the honeycomb lattice: a Two-Particle Self-Consistent study
Authors:
S. Arya,
P. V. Sriluckshmy,
S. R. Hassan,
A. -M. S. Tremblay
Abstract:
The semimetal to antiferromagnet quantum phase transition of the Hubbard model on the honeycomb lattice has come to the forefront in the context of the proposal that a semimetal to spin liquid transition can occur before the transition to the antiferromagnetic phase. To study the semimetal to antiferromagnet transition, we generalize the two-particle self-consistent (TPSC) approach to the honeycom…
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The semimetal to antiferromagnet quantum phase transition of the Hubbard model on the honeycomb lattice has come to the forefront in the context of the proposal that a semimetal to spin liquid transition can occur before the transition to the antiferromagnetic phase. To study the semimetal to antiferromagnet transition, we generalize the two-particle self-consistent (TPSC) approach to the honeycomb lattice (a structure that can be realized in graphene for example). We show that the critical interaction strength where the transition occurs is $U_c/t=3.79\pm 0.01$ quite close to the value $U_c/t=3.869 \pm 0.013$ reported using large-scale quantum Monte Carlo simulations. This reinforces the conclusion that the semimetal to spin liquid transition is pre-empted by the transition to the antiferromagnet. Since TPSC satisfies the Mermin-Wagner theorem, we find temperature-dependent results for the antiferromagnetic and ferromagnetic correlation lengths as well as the dependence of double occupancy and of the renormalized spin and charge interactions on the bare interaction strength. We also estimate the value of the crossover temperature to the renormalized classical regime as a function of interaction strength.
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Submitted 3 July, 2015; v1 submitted 23 April, 2015;
originally announced April 2015.
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Evolution of Gi Fi Technology Over Other Technologies
Authors:
Jyoti Tewari,
Swati Arya
Abstract:
Gi-Fi stands for Gigabit Wireless. Gi-Fi is a wireless transmission system which is ten times faster than other technology and its chip delivers short-range multigigabit data transfer in a local environment. Gi-Fi is a wireless technology which promises high speed short range data transfers with speeds of up to 5 Gbps within a range of 10 meters. The Gi-Fi operates on the 60GHz frequency band. Thi…
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Gi-Fi stands for Gigabit Wireless. Gi-Fi is a wireless transmission system which is ten times faster than other technology and its chip delivers short-range multigigabit data transfer in a local environment. Gi-Fi is a wireless technology which promises high speed short range data transfers with speeds of up to 5 Gbps within a range of 10 meters. The Gi-Fi operates on the 60GHz frequency band. This frequency band is currently mostly unused. It is manufactured using (CMOS) technology. This wireless technology named as Gi-Fi. The benefits and features of this new technology can be helpful for use in development of the next generation of devices and places. In this paper, the comparison is perform between Gi-Fi and some of existing technologies with very high speed large files transfers within seconds it is expected that Gi-Fi to be the preferred wireless technology used in home and office of future.
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Submitted 2 July, 2013;
originally announced July 2013.
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Single bit full adder design using 8 transistors with novel 3 transistors XNOR gate
Authors:
Manoj Kumar,
Sandeep K. Arya,
Sujata Pandey
Abstract:
In present work a new XNOR gate using three transistors has been presented, which shows power dissipation of 550.7272$μ$W in 0.35$μ$m technology with supply voltage of 3.3V. Minimum level for high output of 2.05V and maximum level for low output of 0.084V have been obtained. A single bit full adder using eight transistors has been designed using proposed XNOR cell, which shows power dissipation of…
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In present work a new XNOR gate using three transistors has been presented, which shows power dissipation of 550.7272$μ$W in 0.35$μ$m technology with supply voltage of 3.3V. Minimum level for high output of 2.05V and maximum level for low output of 0.084V have been obtained. A single bit full adder using eight transistors has been designed using proposed XNOR cell, which shows power dissipation of 581.542$μ$W. Minimum level for high output of 1.97V and maximum level for low output of 0.24V is obtained for sum output signal. For carry signal maximum level for low output of 0.32V and minimum level for high output of 3.2V have been achieved. Simulations have been performed by using SPICE based on TSMC 0.35$μ$m CMOS technology. Power consumption of proposed XNOR gate and full adder has been compared with earlier reported circuits and proposed circuit's shows better performance in terms of power consumption and transistor count.
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Submitted 10 January, 2012;
originally announced January 2012.
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Level Shifter Design for Low Power Applications
Authors:
Manoj Kumar,
Sandeep K. Arya,
Sujata Pandey
Abstract:
With scaling of Vt sub-threshold leakage power is increasing and expected to become significant part of total power consumption In present work three new configurations of level shifters for low power application in 0.35μm technology have been presented. The proposed circuits utilize the merits of stacking technique with smaller leakage current and reduction in leakage power. Conventional level sh…
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With scaling of Vt sub-threshold leakage power is increasing and expected to become significant part of total power consumption In present work three new configurations of level shifters for low power application in 0.35μm technology have been presented. The proposed circuits utilize the merits of stacking technique with smaller leakage current and reduction in leakage power. Conventional level shifter has been improved by addition of three NMOS transistors, which shows total power consumption of 402.2264pW as compared to 0.49833nW with existing circuit. Single supply level shifter has been modified with addition of two NMOS transistors that gives total power consumption of 108.641pW as compared to 31.06nW. Another circuit, contention mitigated level shifter (CMLS) with three additional transistors shows total power consumption of 396.75pW as compared to 0.4937354nW. Three proposed circuit's shows better performance in terms of power consumption with a little conciliation in delay. Output level of 3.3V has been obtained with input pulse of 1.6V for all proposed circuits.
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Submitted 2 November, 2010;
originally announced November 2010.
