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Commercial CMOS Process for Quantum Computing: Quantum Dots and Charge Sensing in a 22 nm Fully Depleted Silicon-on-Insulator Process
Authors:
S. V. Amitonov,
A. Aprà,
M. Asker,
B. Barry,
I. Bashir,
P. Bisiaux,
E. Blokhina,
P. Giounanlis,
P. Hanos-Puskai,
M. Harkin,
I. Kriekouki,
D. Leipold,
M. Moras,
C. Power,
N. Samkharadze,
A. Sokolov,
D. Redmond,
C. Rohrbacher,
X. Wu
Abstract:
Confining electrons or holes in quantum dots formed in the channel of industry-standard fully depleted silicon-on-insulator CMOS structures is a promising approach to scalable qubit architectures. In this communication, we present measurement results of a commercial nanostructure fabricated using the GlobalFoundries 22FDX(TM) industrial process. We demonstrate here that quantum dots are formed in…
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Confining electrons or holes in quantum dots formed in the channel of industry-standard fully depleted silicon-on-insulator CMOS structures is a promising approach to scalable qubit architectures. In this communication, we present measurement results of a commercial nanostructure fabricated using the GlobalFoundries 22FDX(TM) industrial process. We demonstrate here that quantum dots are formed in the device channel by applying a combination of a back- and gate voltages. We report our results on an effective detuning of the energy levels in the quantum dots by varying the barrier gate voltages in combination with the back-gate voltage. Given the need and importance of scaling to larger numbers of qubits, we demonstrate here the feasibility of single-electron box sensors at the edge of the quantum dot array for effective charge sensing in different operation modes -- sensing charge transitions in a single- and double quantum dots forming the quantum dot array. We also report measurement results demonstrating bias triangle pair formation and precise control over coupled quantum dots with variations in the inter-dot barrier. The reported measurement results demonstrate the ability to control the formation and coupling of multiple quantum dots in a quantum dot array and to sense their charge state via a Single Electron Box sensor in a commercial process for the first time.
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Submitted 20 December, 2024; v1 submitted 11 December, 2024;
originally announced December 2024.
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Spin Qubit Performance at the Error Correction Threshold: Advancing Quantum Information Processing Above 700 mK
Authors:
S. Amitonov,
A. Aprà,
M. Asker,
R. Bals,
B. Barry,
I. Bashir,
E. Blokhina,
P. Giounanlis,
M. Harkin,
P. Hanos-Puskai,
I. Kriekouki,
D. Leipold,
M. Moras,
N. Murphy,
N. Petropoulos,
C. Power,
A. Sammak,
N. Samkharadze,
A. Semenov,
A. Sokolov,
D. Redmond,
C. Rohrbacher,
X. Wu
Abstract:
This paper presents a characterization of a two-qubit processor in a 6-quantum dot array in SiGe, from the perspective of its quantum information processing capabilities. The analysis includes randomized benchmarking of single- and two-qubit gates, SPAM characterization, and Bell's state tomography; all basic functionality required for universal quantum computation. In light of our efforts to comb…
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This paper presents a characterization of a two-qubit processor in a 6-quantum dot array in SiGe, from the perspective of its quantum information processing capabilities. The analysis includes randomized benchmarking of single- and two-qubit gates, SPAM characterization, and Bell's state tomography; all basic functionality required for universal quantum computation. In light of our efforts to combine spin qubits with integrated cryogenic electronics, we evaluate the qubits' performance metrics at 300mK and 740mK. The latter temperature lies within the realistic thermal budget for integrated cryogenic electronics, making it particularly relevant for assessing qubit performance in practical scenarios.
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Submitted 23 January, 2025; v1 submitted 2 December, 2024;
originally announced December 2024.
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A single hole spin with enhanced coherence in natural silicon
Authors:
N. Piot,
B. Brun,
V. Schmitt,
S. Zihlmann,
V. P. Michal,
A. Apra,
J. C. Abadillo-Uriel,
X. Jehl,
B. Bertrand,
H. Niebojewski,
L. Hutin,
M. Vinet,
M. Urdampilleta,
T. Meunier,
Y. -M. Niquet,
R. Maurand,
S. De Franceschi
Abstract:
Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric susceptibility, however, renders these qubits generally vulnerable to electrical noise, which limits their coherence time. Here we report on a spin-orbit qubit consisting of a single hole electrostatically confined in a…
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Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric susceptibility, however, renders these qubits generally vulnerable to electrical noise, which limits their coherence time. Here we report on a spin-orbit qubit consisting of a single hole electrostatically confined in a natural silicon metal-oxide-semiconductor device. By varying the magnetic field orientation, we reveal the existence of operation sweet spots where the impact of charge noise is minimized while preserving an efficient electric-dipole spin control. We correspondingly observe an extension of the Hahn-echo coherence time up to 88 $μ$s, exceeding by an order of magnitude the best reported values for hole-spin qubits, and approaching the state-of-the-art for electron spin qubits with synthetic spin-orbit coupling in isotopically-purified silicon. This finding largely enhances the prospects of silicon-based hole spin qubits for scalable quantum information processing.
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Submitted 25 September, 2022; v1 submitted 21 January, 2022;
originally announced January 2022.
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Dispersively probed microwave spectroscopy of a silicon hole double quantum dot
Authors:
Rami Ezzouch,
Simon Zihlmann,
Vincent P. Michal,
Jing Li,
Agostino Aprá,
Benoit Bertrand,
Louis Hutin,
Maud Vinet,
Matias Urdampilleta,
Tristan Meunier,
Xavier Jehl,
Yann-Michel Niquet,
Marc Sanquer,
Silvano De Franceschi,
Romain Maurand
Abstract:
Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for quantum computation. In a scalable architecture, each spin qubit will have to be finely tuned and its operating conditions accurately determined. In this prospect, spectroscopic tools compatible with a scalable device layou…
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Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for quantum computation. In a scalable architecture, each spin qubit will have to be finely tuned and its operating conditions accurately determined. In this prospect, spectroscopic tools compatible with a scalable device layout are of primary importance. Here we report a two-tone spectroscopy technique providing access to the spin-dependent energy-level spectrum of a hole double quantum dot defined in a split-gate silicon device. A first GHz-frequency tone drives electric-dipole spin resonance enabled by the valence-band spin-orbit coupling. A second lower-frequency tone (approximately 500 MHz) allows for dispersive readout via rf-gate reflectometry. We compare the measured dispersive response to the linear response calculated in an extended Jaynes-Cummings model and we obtain characteristic parameters such as g-factors and tunnel/spin-orbit couplings for both even and odd occupation.
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Submitted 28 January, 2021; v1 submitted 31 December, 2020;
originally announced December 2020.
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Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon
Authors:
A. Crippa,
R. Ezzouch,
A. Aprá,
A. Amisse,
L. Houtin,
B. Bertrand,
M. Vinet,
M. Urdampilleta,
T. Meunier,
M. Sanquer,
X. Jehl,
R. Maurand,
S. De Franceschi
Abstract:
Silicon spin qubits have emerged as a promising path to large-scale quantum processors. In this prospect, the development of scalable qubit readout schemes involving a minimal device overhead is a compelling step. Here we report the implementation of gate-coupled rf reflectometry for the dispersive readout of a fully functional spin qubit device. We use a p-type double-gate transistor made using i…
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Silicon spin qubits have emerged as a promising path to large-scale quantum processors. In this prospect, the development of scalable qubit readout schemes involving a minimal device overhead is a compelling step. Here we report the implementation of gate-coupled rf reflectometry for the dispersive readout of a fully functional spin qubit device. We use a p-type double-gate transistor made using industry-standard silicon technology. The first gate confines a hole quantum dot encoding the spin qubit, the second one a helper dot enabling readout. The qubit state is measured through the phase response of a lumped-element resonator to spin-selective interdot tunneling. The demonstrated qubit readout scheme requires no coupling to a Fermi reservoir, thereby offering a compact and potentially scalable solution whose operation may be extended above 1\,K.
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Submitted 2 July, 2019; v1 submitted 11 November, 2018;
originally announced November 2018.
