Showing 1–9 of 9 results for author: Aoyagi, Y

Neural-network-assisted in situ processing monitoring by speckle pattern observation

Authors: Shuntaro Tani, Yutsuki Aoyagi, Yohei Kobayashi

Abstract: We propose a method to monitor the progress of laser processing using laser speckle patterns. Laser grooving and percussion drilling were performed using femtosecond laser pulses. The speckle patterns from a processing point were monitored with a high-speed camera and analyzed with a deep neural network. The deep neural network enabled us to extract multiple information from the speckle pattern wi… ▽ More We propose a method to monitor the progress of laser processing using laser speckle patterns. Laser grooving and percussion drilling were performed using femtosecond laser pulses. The speckle patterns from a processing point were monitored with a high-speed camera and analyzed with a deep neural network. The deep neural network enabled us to extract multiple information from the speckle pattern without a need for analytical formulation. The trained neural network was able to predict the ablation depth with an uncertainty of 2 \micron, as well as the material under processing, which will be useful for composite material processing. △ Less

Submitted 19 June, 2020; originally announced June 2020.

Inter-Layer Screening Length to Electric Field in Thin Graphite Film

Authors: Hisao Miyazaki, Shunsuke Odaka, Takashi Sato, Sho Tanaka, Hidenori Goto, Akinobu Kanda, Kazuhito Tsukagoshi, Youiti Ootuka, Yoshinobu Aoyagi

Abstract: Electric conduction in thin graphite film was tuned by two gate electrodes to clarify how the gate electric field induces electric carriers in thin graphite. The graphite was sandwiched between two gate electrodes arranged in a top and bottom gate configuration. A scan of the top gate voltage generates a resistance peak in ambiploar response. The ambipolar peak is shifted by the bottom gate volt… ▽ More Electric conduction in thin graphite film was tuned by two gate electrodes to clarify how the gate electric field induces electric carriers in thin graphite. The graphite was sandwiched between two gate electrodes arranged in a top and bottom gate configuration. A scan of the top gate voltage generates a resistance peak in ambiploar response. The ambipolar peak is shifted by the bottom gate voltage, where the shift rate depends on the graphite thickness. The thickness-dependent peak shift was clarified in terms of the inter-layer screening length to the electric field in the double-gated graphite film. The screening length of 1.2 nm was experimentally obtained. △ Less

Submitted 6 March, 2008; originally announced March 2008.

Comments: 5 pages, 4 figures. To be published in Applied Physics Express

Journal ref: Applied Physics Express 1 (2008) 034007

Hall effect of quasi-hole gas in organic single-crystal transistors

Authors: J. Takeya, K. Tsukagoshi, Y. Aoyagi, T. Takenobu, Y. Iwasa

Abstract: Hall effect is detected in organic field-effect transistors, using appropriately shaped rubrene (C42H28) single crystals. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced charge upon the hole accumulation. The presence of the normal Hall effect means that the electromagnetic character of the surface charge is not of hopping car… ▽ More Hall effect is detected in organic field-effect transistors, using appropriately shaped rubrene (C42H28) single crystals. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced charge upon the hole accumulation. The presence of the normal Hall effect means that the electromagnetic character of the surface charge is not of hopping carriers but resembles that of a two-dimensional hole-gas system. △ Less

Submitted 8 November, 2005; originally announced November 2005.

Journal ref: Jap. J. Appl. Phys. Vol. 44, No. 46, 2005, pp. L1393-L1396

Four-electron shell structures and an interacting two-electron system in carbon nanotube quantum dots

Authors: S. Moriyama, T. Fuse, M. Suzuki, Y. Aoyagi, K. Ishibashi

Abstract: Low-temperature transport measurements have been carried out on single-wall carbon nanotube quantum dots in a weakly coupled regime in magnetic fields up to 8 Tesla. Four-electron shell filling was observed, and the magnetic field evolution of each Coulomb peak was investigated, in which magnetic field induced spin flip and resulting spin polarization were observed. Excitation spectroscopy measu… ▽ More Low-temperature transport measurements have been carried out on single-wall carbon nanotube quantum dots in a weakly coupled regime in magnetic fields up to 8 Tesla. Four-electron shell filling was observed, and the magnetic field evolution of each Coulomb peak was investigated, in which magnetic field induced spin flip and resulting spin polarization were observed. Excitation spectroscopy measurements have revealed Zeeman splitting of single particle states for one electron in the shell, and demonstrated singlet and triplet states with direct observation of the exchange splitting at zero-magnetic field for two electrons in the shell, the simplest example of the Hund's rule. The latter indicates the direct analogy to an artificial He atom. △ Less

Submitted 7 February, 2005; v1 submitted 10 November, 2004; originally announced November 2004.

Comments: 4 pages, 3 figures, submitted to Physical Review Letters

Journal ref: Physical Review Letters, 94, 186806 (2005).

Current distribution inside Py/Cu lateral spin-valve device

Authors: J. Hamrle, T. Kimura, Y. Otani, K. Tsukagoshi, Y. Aoyagi

Abstract: We have investigated experimentally the non-local voltage signal (NLVS) in the lateral permalloy (Py)/Cu/Py spin valve devices with different width of Cu stripes. We found that NLVS strongly depends on the distribution of the spin-polarized current inside Cu strip in the vicinity of the Py-detector. To explain these data we have developed a diffusion model describing spatial (3D) distribution of… ▽ More We have investigated experimentally the non-local voltage signal (NLVS) in the lateral permalloy (Py)/Cu/Py spin valve devices with different width of Cu stripes. We found that NLVS strongly depends on the distribution of the spin-polarized current inside Cu strip in the vicinity of the Py-detector. To explain these data we have developed a diffusion model describing spatial (3D) distribution of the spin-polarized current in the device. The results of our calculations show that NLVS is decreased by factor of 10 due to spin flip-scattering occurring at Py/Cu interface. The interface resistivity on Py/Cu interface is also present, but its contribution to reduction of NLVS is minor. We also found that most of the spin-polarized current is injected within the region 30 nm from Py-injector/Cu interface. In the area at Py-detector/Cu interface, the spin-polarized current is found to flow mainly close on the injector side, with 1/e exponential decay in the magnitude within the distance 80 nm. △ Less

Submitted 9 October, 2004; originally announced October 2004.

Comments: 10 pages, 14 figures

Proximity Effect in a Superconductor-Metallofullerene-Superconductor Molecular Junction

Authors: A. Yu. Kasumov, K. Tsukagoshi, M. Kawamura, T. Kobayashi, Y. Aoyagi, K. Senba, T. Kodama, H. Nishikawa, I. Ikemoto, K. Kikuchi, V. T. Volkov, Yu. A. Kasumov, R. Deblock, S. Gueron, H. Bouchiat

Abstract: We report low-temperature transport measurements through molecules of Gd metallofullerenes between superconducting suspended electrodes. The presence and number of molecules in the 2 nm-wide gap between electrodes was determined by high resolution transmission electron microscopy. We find that a junction containing a single metallofullerene dimer between superconducting electrodes displays signs… ▽ More We report low-temperature transport measurements through molecules of Gd metallofullerenes between superconducting suspended electrodes. The presence and number of molecules in the 2 nm-wide gap between electrodes was determined by high resolution transmission electron microscopy. We find that a junction containing a single metallofullerene dimer between superconducting electrodes displays signs of proximity-induced superconductivity. In contrast, no proximity effects develops in junctions containing larger cluster of metallofulerenes. These results can be understood by taking into account multiple Andreev reflections, and the spin states of the Gd atoms. △ Less

Submitted 25 November, 2004; v1 submitted 11 February, 2004; originally announced February 2004.

Comments: 5 pages, 4 figures. Submitted to Phys.Rev.Lett

Journal ref: Phys. Rev. B 72, 033414 (2005)

Superconducting SET with tunable electromagnetic environment

Authors: Michio Watanabe, Koji Ishibashi, Yoshinobu Aoyagi

Abstract: We have studied the environmental effect on superconducting single-electron transistors (S-SETs) by biasing S-SETs with arrays of small-capacitance dc SQUIDs, whose effective impedance can be varied in situ. As the zero-bias resistance of the arrays is increased, Coulomb blockade in the S-SET becomes sharper, and the gate-voltage dependence changes from e-periodic to 2e-periodic. The SQUID array… ▽ More We have studied the environmental effect on superconducting single-electron transistors (S-SETs) by biasing S-SETs with arrays of small-capacitance dc SQUIDs, whose effective impedance can be varied in situ. As the zero-bias resistance of the arrays is increased, Coulomb blockade in the S-SET becomes sharper, and the gate-voltage dependence changes from e-periodic to 2e-periodic. The SQUID arrays could be used as on-chip noise filters. △ Less

Submitted 10 September, 2002; v1 submitted 19 August, 2002; originally announced August 2002.

Comments: 2 pages, 3 embedded figures, submitted to LT23 proceedings. Error in Fig. 1 has been fixed

Journal ref: Physica E 18, 25 (2003)

Fast algorithm for calculating two-photon absorption spectra

Authors: Yoshiyuki Kurokawa, Shintaro Nomura, Tadashi Takemori, Yoshinobu Aoyagi

Abstract: We report a numerical calculation of the two-photon absorption coefficient of electrons in a binding potential using the real-time real-space higher-order difference method. By introducing random vector averaging for the intermediate state, the task of evaluating the two-dimensional time integral is reduced to calculating two one-dimensional integrals. This allows the reduction of the computatio… ▽ More We report a numerical calculation of the two-photon absorption coefficient of electrons in a binding potential using the real-time real-space higher-order difference method. By introducing random vector averaging for the intermediate state, the task of evaluating the two-dimensional time integral is reduced to calculating two one-dimensional integrals. This allows the reduction of the computation load down to the same order as that for the linear response function. The relative advantage of the method compared to the straightforward multi-dimensional time integration is greater for the calculation of non-linear response functions of higher order at higher energy resolution. △ Less

Submitted 9 December, 1998; originally announced December 1998.

Comments: 4 pages, 2 figures. It will be published in Phys. Rev. E on 1, March, 1999

Calculating the linear response functions of non-interacting electrons by the time-dependent Schroedinger equation

Authors: Toshiaki Iitaka, Shintaro Nomura, Hideki Hirayama, Xinwei Zhao, Yoshinobu Aoyagi, Takuo Sugano

Abstract: An O(N) algorithm is proposed for calculating linear response functions of non-interacting electrons in arbitray potential. This algorithm is based on numerical solution of the time-dependent Schroedinger equation discretized in space, and suitable to parallel- and vector- computation. Since it avoids O(N^3) computational effort of matrix diagonalization, it requires only O(N) computational effo… ▽ More An O(N) algorithm is proposed for calculating linear response functions of non-interacting electrons in arbitray potential. This algorithm is based on numerical solution of the time-dependent Schroedinger equation discretized in space, and suitable to parallel- and vector- computation. Since it avoids O(N^3) computational effort of matrix diagonalization, it requires only O(N) computational effort where N is the dimension of the statevector. This O(N) algorithm is very effective for systems consisting of thousands of atoms, since otherwise we have to calculate large number of eigenstates, i.e., the occupied one-electron states up to the Fermi energy and the unoccupied states with higher energy. The advantage of this method compared to the Chebyshev polynomial method recently developed by Wang (L.W. Wang, Phys. Rev. B49, 10154 (1994);L.W. Wang, Phys. Rev. Lett. 73, 1039 (1994)) is that our method can calculate linear response functions without any storage of huge statevectors on external storage. Therefore it can treat much larger systems. △ Less

Submitted 5 May, 1997; v1 submitted 26 March, 1997; originally announced March 1997.

Comments: to be published in Phys.Rev.E56(1). 19 pages, 8 figures, more information at http://espero.riken.go.jp

Journal ref: Phys. Rev. E56 1222 (1997)