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Understanding Individual-Space Relationships to Inform and Enhance Location-Based Applications
Authors:
Licia Amichi,
Gautam Malviya Thakur,
Carter Christopher
Abstract:
Understanding the complex dynamics of human navigation and spatial behavior is essential for advancing location-based services, public health, and related fields. This paper investigates the multifaceted relationship between individuals and their environments (e.g. location and places they visit), acknowledging the distinct influences of personal preferences, experiences, and social connections. W…
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Understanding the complex dynamics of human navigation and spatial behavior is essential for advancing location-based services, public health, and related fields. This paper investigates the multifaceted relationship between individuals and their environments (e.g. location and places they visit), acknowledging the distinct influences of personal preferences, experiences, and social connections. While certain locations hold sentimental value and are frequently visited, others function as mere transitory points. To the best of our knowledge, this paper is the first to exploit visitation patterns and dwell times to characterize an individual's relationship with specific locations. We identify seven key types of spatial relationships and analyze the discrepancies among these visit types across semantic, spatial, and temporal dimensions. Our analysis highlights key findings, such as the prevalence of anchored-like visits (e.g. home, work) in both real-world Singapore and Beijing datasets, with unique associations in each city -Singapore's anchored-liked visits include recreational spaces, while Beijing's are limited to residential, business, and educational sites. These findings emphasize the importance of geographic and cultural context in shaping mobility and their potential in benefiting the precision and personalization of location-based services.
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Submitted 19 February, 2025;
originally announced March 2025.
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Joint Allocation Strategies of Power and Spreading Factors with Imperfect Orthogonality in LoRa Networks
Authors:
Licia Amichi,
Megumi Kaneko,
Ellen Hidemi Fukuda,
Nancy El Rachkidy,
Alexandre Guitton
Abstract:
The LoRa physical layer is one of the most promising Low Power Wide-Area Network (LPWAN) technologies for future Internet of Things (IoT) applications. It provides a flexible adaptation of coverage and data rate by allocating different Spreading Factors (SFs) and transmit powers to end-devices. We focus on improving throughput fairness while reducing energy consumption. Whereas most existing metho…
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The LoRa physical layer is one of the most promising Low Power Wide-Area Network (LPWAN) technologies for future Internet of Things (IoT) applications. It provides a flexible adaptation of coverage and data rate by allocating different Spreading Factors (SFs) and transmit powers to end-devices. We focus on improving throughput fairness while reducing energy consumption. Whereas most existing methods assume perfect SF orthogonality and ignore the harmful effects of inter-SF interferences, we formulate a joint SF and power allocation problem to maximize the minimum uplink throughput of end-devices, subject to co-SF and inter-SF interferences, and power constraints. This results into a mixed-integer non-linear optimization, which, for tractability, is split into two sub-problems: firstly, the SF assignment for fixed transmit powers, and secondly, the power allocation given the previously obtained assignment solution. For the first sub-problem, we propose a low-complexity many-to-one matching algorithm between SFs and end-devices. For the second one, given its intractability, we transform it using two types of constraints approximation: a linearized and a quadratic version. Our performance evaluation demonstrates that the proposed joint SF allocation and power optimization enables to drastically enhance various performance objectives such as throughput, fairness and power consumption, and that it outperforms baseline schemes.
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Submitted 25 April, 2019;
originally announced April 2019.
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Electrical and Optical Properties of Heavily Ge-Doped AlGaN
Authors:
R. Blasco,
A. Ajay,
E. Robin,
C. Bougerol,
K. Lorentz,
L. C. Alves,
I. Mouton,
L. Amichi,
A. Grenier,
E. Monroy
Abstract:
We report the effect of germanium as n-type dopant on the electrical and optical properties of AlxGa1-xN layers grown by plasma assisted molecular-beam epitaxy. The Al content has been varied from x = 0 to 0.66, confirmed by Rutherford backscattering spectrometry, and the Ge concentration was increased up to [Ge] = 1E21 cm-3. Even at these high doping levels Ge does not induce any structural degra…
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We report the effect of germanium as n-type dopant on the electrical and optical properties of AlxGa1-xN layers grown by plasma assisted molecular-beam epitaxy. The Al content has been varied from x = 0 to 0.66, confirmed by Rutherford backscattering spectrometry, and the Ge concentration was increased up to [Ge] = 1E21 cm-3. Even at these high doping levels Ge does not induce any structural degradation in AlxGa1-xN layers with x below 0.15. However, for higher Al compositions, clustering of Ge forming crystallites were observed. Hall effect measurements show a gradual decrease of the carrier concentration when increasing the Al mole fraction, which is already noticeable in samples with x = 0.24. Samples with x = 0.64-0.66 remain conductive, but the donor activation rate drops to around 0.1% (carrier concentration around 1E18 cm-3 for [Ge] = 1E21 cm-3). From the optical point of view, the low temperature photoluminescence is dominated by the band-to-band emission, which show only spectral shift and broadening associated to the Burstein-Moss effect. The evolution of the photoluminescence peak position with temperature shows that the free carriers due to Ge doping can efficiently screen the potential fluctuations induced by alloy disorder.
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Submitted 13 December, 2018; v1 submitted 25 October, 2018;
originally announced October 2018.
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Ge doping of GaN beyond the Mott transition
Authors:
A. Ajay,
J. Schörmann,
M. Jimenez-Rodriguez,
C. B. Lim,
F. Walther,
M. Rohnke,
I. Mouton,
L. Amichi,
C. Bougerol,
M. I. Den Hertog,
M. Eickhoff,
E. Monroy
Abstract:
We present a study of germanium as n-type dopant in wurtzite GaN films grown by plasma-assisted molecular beam epitaxy, reaching carrier concentrations of up to 6.7E20 cm-3 at 300K, well beyond the Mott density. The Ge concentration and free carrier density were found to scale linearly with the Ge flux in the studied range. All the GaN:Ge layers present smooth surface morphology with atomic terrac…
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We present a study of germanium as n-type dopant in wurtzite GaN films grown by plasma-assisted molecular beam epitaxy, reaching carrier concentrations of up to 6.7E20 cm-3 at 300K, well beyond the Mott density. The Ge concentration and free carrier density were found to scale linearly with the Ge flux in the studied range. All the GaN:Ge layers present smooth surface morphology with atomic terraces, without trace of pits or cracks, and the mosaicity of the samples has no noticeable dependence on the Ge concentration. The variation of the GaN:Ge band gap with the carrier concentration is consistent with theoretical calculations of the band gap renormalization due to electron-electron and electron-ion interaction, and Burstein-Moss effect.
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Submitted 8 July, 2016; v1 submitted 1 April, 2016;
originally announced April 2016.
