-
On ideals of product of commutative rings and their applications
Authors:
Mehdi Badie,
Ali Rezaie Aliabad,
Foad Obeidavi
Abstract:
In this paper, leveraging the recent achievements of researchers, we have revisited the family of ideals of product of commutative rings. We demonstrate that if $ \{ R_α\}_{α\in A} $ is an infinite family of rings, then $ \left| Max \left( \prod_{α\in A} R_α\right) \right| \geqslant 2^{2^{|A|}} $. Notably, if these rings are local then the equality holds. We establish that $ Max(R_α) $ is homeomor…
▽ More
In this paper, leveraging the recent achievements of researchers, we have revisited the family of ideals of product of commutative rings. We demonstrate that if $ \{ R_α\}_{α\in A} $ is an infinite family of rings, then $ \left| Max \left( \prod_{α\in A} R_α\right) \right| \geqslant 2^{2^{|A|}} $. Notably, if these rings are local then the equality holds. We establish that $ Max(R_α) $ is homeomorphic to a closed subset of $ Max \left( \prod_{α\in A} R_α\right) $, for each $ α\in A $. Additionally, we show that $ Max(R) $ is disconnected \ff $ R $ is direct summand of its two proper ideals. We deduce that if the intersection of each infinite family of maximal ideals of a ring is zero, then the ring is not direct summand of its two proper ideals. Furthermore, we prove that for each ring $R$, $ C\left(Max(R)\right) $ is isomorphic to $ C\left(Max\left(C(Y)\right)\right) $, for some compact $T_4$ space $Y$. Finally, we explore that $h_M(x)$'s can define roles of zero-sets.
△ Less
Submitted 10 June, 2025;
originally announced June 2025.
-
Electronic and Optical Properties of γ- and θ- Alumina by First Principle Calculations
Authors:
Ahmed S. Jbara,
Zulkafli Othaman,
H. A. Rahnamaye Aliabad,
M. A. Saeed
Abstract:
The electronic and optical parameters of γ-Al2O3 and θ-Al2O3 have been studied by using the first principle within the framework of density function theory (DFT). The computational approach is based on full-potential linearized augmented plane wave method (FP-LAPW) within the generalized gradient approximation (GGA), local density approximation (LDA), and modified Becke-Johnson potential (mBJ). Th…
▽ More
The electronic and optical parameters of γ-Al2O3 and θ-Al2O3 have been studied by using the first principle within the framework of density function theory (DFT). The computational approach is based on full-potential linearized augmented plane wave method (FP-LAPW) within the generalized gradient approximation (GGA), local density approximation (LDA), and modified Becke-Johnson potential (mBJ). The results show that these compounds have a direct gap (Γ-Γ) of about 5.375 eV and 4.716 eV for γ-Al2O3 and θ-Al2O3, respectively. Several optical parameters of these materials are also investigated. The values of the real part of dielectric constant are found to be 3.259 and 3.694 for γ-Al2O3 and θ-Al2O3, respectively, which are close to the experimental one (3.416). The refractive index is 1.806 and 1.922 for γ-Al2O3 and θ-Al2O3 respectively, and shows a good agreement with the experimental result which is 1.86. GGA findings are consistent with the experimental results and are better than the other approximations. There are no salient differences between GGA and LDA results. The results advocate using this material as a transparent conducting layer in solar cell structure, which can be operated in a wide energy range.
△ Less
Submitted 20 March, 2019;
originally announced March 2019.
-
An extension of z-ideals and z^0-ideals
Authors:
A. R. Aliabad,
M. Badie,
S. Nazari
Abstract:
Let $R$ be a commutative ring, $Y\subseteq \mathrm{Spec}(R)$ and $ h_Y(S)=\{P\in Y:S\subseteq P \}$, for every $S\subseteq R$. An ideal $I$ is said to be an $\mathcal{H}_Y$-ideal whenever it follows from $h_Y(a)\subseteq h_Y(b)$ and $a\in I$ that $b\in I$. A strong $\mathcal{H}_Y$-ideal is defined in the same way by replacing an arbitrary finite set $F$ instead of the element $a$. In this paper th…
▽ More
Let $R$ be a commutative ring, $Y\subseteq \mathrm{Spec}(R)$ and $ h_Y(S)=\{P\in Y:S\subseteq P \}$, for every $S\subseteq R$. An ideal $I$ is said to be an $\mathcal{H}_Y$-ideal whenever it follows from $h_Y(a)\subseteq h_Y(b)$ and $a\in I$ that $b\in I$. A strong $\mathcal{H}_Y$-ideal is defined in the same way by replacing an arbitrary finite set $F$ instead of the element $a$. In this paper these two classes of ideals (which are based on the spectrum of the ring $R$ and are a generalization of the well-known concepts semiprime ideal, z-ideal, $z^{\circ}$-ideal (d-ideal), sz-ideal and $sz^{\circ}$-ideal ($ξ$-ideal)) are studied. We show that the most important results about these concepts, "Zariski topology", "annihilator" and etc can be extended in such a way that the corresponding consequences seems to be trivial and useless. This comprehensive look helps to recognize the resemblances and differences of known concepts better.
△ Less
Submitted 29 July, 2018;
originally announced July 2018.
-
Accurate theoretical bandgap calculations of II-VI semiconductors
Authors:
Imad Khan,
Iftikhar Ahmad,
H. A. Rahnamaye Aliabad,
M. Maqbool
Abstract:
In this letter we present band gaps of II-VI semiconductors, calculated by the full potential linearized augmented plane wave (FP-LAPW) method with the modified Becke-Johnson (mBJ) potential. The accuracy of the calculated results is assessed by comparing them with the experimentally measured values. After careful analysis of the results presented in this paper, we found that the mBJ potential is…
▽ More
In this letter we present band gaps of II-VI semiconductors, calculated by the full potential linearized augmented plane wave (FP-LAPW) method with the modified Becke-Johnson (mBJ) potential. The accuracy of the calculated results is assessed by comparing them with the experimentally measured values. After careful analysis of the results presented in this paper, we found that the mBJ potential is very efficient in the predication of the bandgaps of II-VI semiconductors. It is also revealed that the effectiveness of mBJ is based on the proper treatment of the d-orbitals in the highly correlated electron system.
△ Less
Submitted 4 January, 2012;
originally announced January 2012.