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Room temperature magnetic phase transition in an electrically-tuned van der Waals ferromagnet
Authors:
Cheng Tan,
Ji-Hai Liao,
Guolin Zheng,
Meri Algarni,
Jia-Yi Lin,
Xiang Ma,
Edwin L. H. Mayes,
Matthew R. Field,
Sultan Albarakati,
Majid Panahandeh-Fard,
Saleh Alzahrani,
Guopeng Wang,
Yuanjun Yang,
Dimitrie Culcer,
James Partridge,
Mingliang Tian,
Bin Xiang,
Yu-Jun Zhao,
Lan Wang
Abstract:
Finding tunable van der Waals (vdW) ferromagnets that operate at above room temperature is an important research focus in physics and materials science. Most vdW magnets are only intrinsically magnetic far below room temperature and magnetism with square-shaped hysteresis at room-temperature has yet to be observed. Here, we report magnetism in a quasi-2D magnet Cr1.2Te2 observed at room temperatur…
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Finding tunable van der Waals (vdW) ferromagnets that operate at above room temperature is an important research focus in physics and materials science. Most vdW magnets are only intrinsically magnetic far below room temperature and magnetism with square-shaped hysteresis at room-temperature has yet to be observed. Here, we report magnetism in a quasi-2D magnet Cr1.2Te2 observed at room temperature (290 K). This magnetism was tuned via a protonic gate with an electron doping concentration up to 3.8 * 10^21 cm^-3. We observed non-monotonic evolutions in both coercivity and anomalous Hall resistivity. Under increased electron doping, the coercivities and anomalous Hall effects (AHEs) vanished, indicating a doping-induced magnetic phase transition. This occurred up to room temperature. DFT calculations showed the formation of an antiferromagnetic (AFM) phase caused by the intercalation of protons which induced significant electron doping in the Cr1.2Te2. The tunability of the magnetic properties and phase in room temperature magnetic vdW Cr1.2Te2 is a significant step towards practical spintronic devices.
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Submitted 19 March, 2024; v1 submitted 20 August, 2023;
originally announced August 2023.
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Gate-tunable exchange bias effect in FePS3-Fe5GeTe2 van der Waals heterostructures
Authors:
Sultan Albarakati,
Wen-Qiang Xie,
Cheng Tan,
Guolin Zheng,
Meri Algarni,
Junbo Li,
James Partridge,
Michelle J. S. Spencer,
Lawrence Farrar,
Yimin Xiong,
Mingliang Tian,
Xiaolin Wang,
Yu-Jun Zhao,
Lan Wang
Abstract:
Electrical gate-manipulated exchange bias (EB) effect is a long-term goal for spintronics applications. Meanwhile, the emergence of van der Waals (vdW) magnetic heterostructures provides ideal platforms for the study of interlayer magnetic coupling. However, to date, the electrical gate-controlled EB effect has yet to be realized in vdW heterostructures. Here, for the first time, we realized elect…
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Electrical gate-manipulated exchange bias (EB) effect is a long-term goal for spintronics applications. Meanwhile, the emergence of van der Waals (vdW) magnetic heterostructures provides ideal platforms for the study of interlayer magnetic coupling. However, to date, the electrical gate-controlled EB effect has yet to be realized in vdW heterostructures. Here, for the first time, we realized electrically-controllable EB effects in a vdW antiferromagnetic (AFM)-ferromagnetic (FM) heterostructure, FePS3-Fe5GeTe2. For pristine FePS3-Fe5GeTe2 heterostructures, sizable EB effects can be generated due to the strong interface coupling, which also depend on the thickness of the ferromagnetic layers. By applying a solid protonic gate, the EB effects can be electrically tuned largely by proton intercalations and deintercalations. The EB field reaches up to 23% of the coercive field and the blocking temperature exceeds 50 K at Vg= -3.15 V. The proton intercalations not only tune the average magnetic exchange coupling, but also change the AFM configurations and transform the heterointerface between an uncompensated AFM-FM interface and a compensated AFM-FM interface. These alterations result in a dramatic modulation of the total interface exchange coupling and the resultant EB effects. The study is a significant step towards vdW heterostructure-based magnetic logic for future low-energy electronics.
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Submitted 20 March, 2022;
originally announced March 2022.
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Electrically controlled superconductor-insulator transition and giant anomalous Hall effect in kagome metal CsV3Sb5 nanoflakes
Authors:
Guolin Zheng,
Cheng Tan,
Zheng Chen,
Maoyuan Wang,
Xiangde Zhu,
Sultan Albarakati,
Meri Algarni,
James Partridge,
Lawrence Farrar,
Jianhui Zhou,
Wei Ning,
Mingliang Tian,
Michael S. Fuhrer,
Lan Wang
Abstract:
The electronic correlations (e.g. unconventional superconductivity (SC), chiral charge order and nematic order) and giant anomalous Hall effect (AHE) in topological kagome metals AV3Sb5 (A= K, Rb, and Cs) have attracted great interest. Electrical control of those correlated electronic states and AHE allows us to resolve their own nature and origin and to discover new quantum phenomena. Here, we sh…
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The electronic correlations (e.g. unconventional superconductivity (SC), chiral charge order and nematic order) and giant anomalous Hall effect (AHE) in topological kagome metals AV3Sb5 (A= K, Rb, and Cs) have attracted great interest. Electrical control of those correlated electronic states and AHE allows us to resolve their own nature and origin and to discover new quantum phenomena. Here, we show that a protonic gate can largely modulate the effective disorders and carrier density in CsV3Sb5 nanoflakes, leading to significant modifications of SC, unusual charge density wave (CDW) and giant AHE. Notably, we observed a direct superconductor-insulator transition (SIT) driven by superconducting phase fluctuation due to the doping-enhanced disorders, in addition to a large suppression of CDW. Meanwhile, the carrier density modulation shifts the Fermi level across the CDW gap and gives rise to a nontrivial evolution of AHE, in line with the asymmetric density of states of CDW sub-bands near the saddle point. With the first-principles calculations, we suggest the extrinsic skew scattering of holes in the nearly flat bands with finite Berry curvature by multiple impurities accounts for the giant AHE. Our work uncovers a disorder-driven bosonic SIT, outlines a global picture of the giant AHE and reveals its correlation with the unconventional CDW in the AV3Sb5 family.
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Submitted 8 March, 2022; v1 submitted 26 September, 2021;
originally announced September 2021.
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Gate-controlled magnetic phase transition in a van der Waals magnet Fe$_5$GeTe$_2$
Authors:
Cheng Tan,
Wen-Qiang Xie,
Guolin Zheng,
Nuriyah Aloufi,
Sultan Albarakati,
Meri Algarni,
Jiangpeng Song,
James Partridge,
Dimitrie Culcer,
Xiaolin Wang,
Jiabao Yi,
Yimin Xiong,
Mingliang Tian,
Yu-Jun Zhao,
Lan Wang
Abstract:
Magnetic van der Waals (vdW) materials, including ferromagnets (FM) and antiferromagnets (AFM), have given access to the investigation of magnetism in two-dimensional (2D) limit and attracted broad interests recently. However, most of them are semiconducting or insulating and the vdW itinerant magnets, especially vdW itinerant AFM, are very rare. Here, we studied the anomalous Hall effect of a vdW…
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Magnetic van der Waals (vdW) materials, including ferromagnets (FM) and antiferromagnets (AFM), have given access to the investigation of magnetism in two-dimensional (2D) limit and attracted broad interests recently. However, most of them are semiconducting or insulating and the vdW itinerant magnets, especially vdW itinerant AFM, are very rare. Here, we studied the anomalous Hall effect of a vdW itinerant magnet Fe$_5$GeTe$_2$ (F5GT) with various thicknesses down to 6.8 nm (two unit cells). Despite the robust ferromagnetic ground state in thin-layer F5GT, however, we show that the electron doping implemented by a protonic gate can eventually induce a magnetic phase transition from FM to AFM. Realization of an antiferromagnetic phase in F5GT highlights its promising applications in high-temperature antiferromagnetic vdW devices and heterostructures.
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Submitted 1 December, 2020;
originally announced December 2020.
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Tailoring Dzyaloshinskii-Moriya interaction in a transition metal dichalcogenide by dual-intercalation
Authors:
Guolin Zheng,
Maoyuan Wang,
Xiangde Zhu,
Cheng Tan,
Jie Wang,
Sultan Albarakati,
Nuriyah Aloufi,
Meri Algarni,
Lawrence Farrar,
Min Wu,
Yugui Yao,
Mingliang Tian,
Jianhui Zhou,
Lan Wang
Abstract:
Dzyaloshinskii-Moriya interaction (DMI) is vital to form various chiral spin textures, novel behaviors of magnons and permits their potential applications in energy-efficient spintronic devices. Here, we realize a sizable bulk DMI in a transition metal dichalcogenide (TMD) 2H-TaS2 by intercalating Fe atoms, which form the chiral supercells with broken spatial inversion symmetry and also act as the…
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Dzyaloshinskii-Moriya interaction (DMI) is vital to form various chiral spin textures, novel behaviors of magnons and permits their potential applications in energy-efficient spintronic devices. Here, we realize a sizable bulk DMI in a transition metal dichalcogenide (TMD) 2H-TaS2 by intercalating Fe atoms, which form the chiral supercells with broken spatial inversion symmetry and also act as the source of magnetic orderings. Using a newly developed protonic gate technology, gate-controlled protons intercalation could further change the carrier density and intensely tune DMI via the Ruderman-Kittel-Kasuya-Yosida mechanism. The resultant giant topological Hall resistivity of 1.4 uohm.cm at -5.2V (about 460% of the zero-bias value) is larger than most of the known magnetic materials. Theoretical analysis indicates that such a large topological Hall effect originates from the two-dimensional Bloch-type chiral spin textures stabilized by DMI, while the large anomalous Hall effect comes from the gapped Dirac nodal lines by spin-orbit interaction. Dual-intercalation in 2HTaS2 provides a model system to reveal the nature of DMI in the large family of TMDs and a promising way of gate tuning of DMI, which further enables an electrical control of the chiral spin textures and related electromagnetic phenomena.
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Submitted 15 June, 2021; v1 submitted 4 November, 2020;
originally announced November 2020.
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Determination of the spin orientation of helical electrons in monolayer WTe2
Authors:
Cheng Tan,
Ming-Xun Deng,
Feixiang Xiang,
Guolin Zheng,
Sultan Albarakati,
Meri Algarni,
James Partridge,
Alex R. Hamilton,
Rui-Qiang Wang,
Lan Wang
Abstract:
Monolayer WTe2 is predicted to be a quantum spin Hall insulator (QSHI) and electron transport along its edges has been experimentally observed. However, the 'smoking gun' of QSHI, spin momentum locking of the edge electrons, has not been experimentally demonstrated. We propose a model to establish the relationship between the anisotropic magnetoresistance (AMR) and spin orientation of the helical…
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Monolayer WTe2 is predicted to be a quantum spin Hall insulator (QSHI) and electron transport along its edges has been experimentally observed. However, the 'smoking gun' of QSHI, spin momentum locking of the edge electrons, has not been experimentally demonstrated. We propose a model to establish the relationship between the anisotropic magnetoresistance (AMR) and spin orientation of the helical electrons in WTe2. Based on the predictions of the model, angular dependent magnetoresistance measurements were carried out. The experimental results fully supported the model and the spin orientation of the helical edge electrons was determined. Our results not only demonstrate that WTe2 is indeed a QSHI, but also suggest a convenient method to determine the spin orientation of other QSHIs.
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Submitted 29 October, 2020;
originally announced October 2020.
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Gate-Tuned Interlayer Coupling in van der Waals Ferromagnet Fe$_3$GeTe$_2$ Nanoflakes
Authors:
Guolin Zheng,
Wen-Qiang Xie,
Sultan Albarakati,
Meri Algarni,
Cheng Tan,
Yihao Wang,
Jingyang Peng,
James Partridge,
Lawrence Farrar,
Jiabao Yi,
Yimin Xiong,
Mingliang Tian,
Yu-Jun Zhao,
Lan Wang
Abstract:
The weak interlayer coupling in van der Waals (vdW) magnets has confined their application to two dimensional (2D) spintronic devices. Here, we demonstrate that the interlayer coupling in a vdW magnet Fe$_3$GeTe$_2$ (FGT) can be largely modulated by a protonic gate.With the increase of the protons intercalated among vdW layers,interlayer magnetic coupling increases.Because of the existence of anti…
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The weak interlayer coupling in van der Waals (vdW) magnets has confined their application to two dimensional (2D) spintronic devices. Here, we demonstrate that the interlayer coupling in a vdW magnet Fe$_3$GeTe$_2$ (FGT) can be largely modulated by a protonic gate.With the increase of the protons intercalated among vdW layers,interlayer magnetic coupling increases.Because of the existence of antiferromagnetic layers in FGT nanoflakes, the increasing interlayer magnetic coupling induces exchange bias in protonated FGT nanoflakes. Most strikingly, a rarely seen zero-field cooled (ZFC) exchange bias with very large values (maximally up to 1.2 kOe) has been observed when higher positive voltages (Vg>4.36 V) are applied to the protonic gate, which clearly demonstrates that a strong interlayer coupling is realized by proton intercalation. Such strong interlayer coupling will enable a wider range of applications for vdW magnets.
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Submitted 24 July, 2020;
originally announced July 2020.
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Spin-valve Josephson junctions with perpendicular magnetic anisotropy for cryogenic memory
Authors:
N. Satchell,
P. M. Shepley,
M. Algarni,
M. Vaughan,
E. Darwin,
M. Ali,
M. C. Rosamond,
L. Chen,
E. H. Linfield,
B. J. Hickey,
G. Burnell
Abstract:
We demonstrate a Josephson junction with a weak link containing two ferromagnets, with perpendicular magnetic anisotropy and independent switching fields in which the critical current can be set by the mutual orientation of the two layers. Such pseudospin-valve Josephson junctions are a candidate cryogenic memory in an all superconducting computational scheme. Here, we use Pt/Co/Pt/CoB/Pt as the w…
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We demonstrate a Josephson junction with a weak link containing two ferromagnets, with perpendicular magnetic anisotropy and independent switching fields in which the critical current can be set by the mutual orientation of the two layers. Such pseudospin-valve Josephson junctions are a candidate cryogenic memory in an all superconducting computational scheme. Here, we use Pt/Co/Pt/CoB/Pt as the weak link of the junction with $d_\text{Co} = 0.6$ nm, $d_\text{CoB} = 0.3$ nm, and $d_\text{Pt} = 5$ nm and obtain a $60\%$ change in the critical current for the two magnetization configurations of the pseudospin-valve. Ferromagnets with perpendicular magnetic anisotropy have advantages over magnetization in-plane systems which have been exclusively considered to this point, as in principle the magnetization and magnetic switching of layers in the junction should not affect the in-plane magnetic flux.
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Submitted 13 January, 2020; v1 submitted 25 November, 2019;
originally announced November 2019.
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SurfCut: Surfaces of Minimal Paths From Topological Structures
Authors:
Marei Algarni,
Ganesh Sundaramoorthi
Abstract:
We present SurfCut, an algorithm for extracting a smooth, simple surface with an unknown 3D curve boundary from a noisy 3D image and a seed point. Our method is built on the novel observation that certain ridge curves of a function defined on a front propagated using the Fast Marching algorithm lie on the surface. Our method extracts and cuts these ridges to form the surface boundary. Our surface…
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We present SurfCut, an algorithm for extracting a smooth, simple surface with an unknown 3D curve boundary from a noisy 3D image and a seed point. Our method is built on the novel observation that certain ridge curves of a function defined on a front propagated using the Fast Marching algorithm lie on the surface. Our method extracts and cuts these ridges to form the surface boundary. Our surface extraction algorithm is built on the novel observation that the surface lies in a valley of the distance from Fast Marching. We show that the resulting surface is a collection of minimal paths. Using the framework of cubical complexes and Morse theory, we design algorithms to extract these critical structures robustly. Experiments on three 3D datasets show the robustness of our method, and that it achieves higher accuracy with lower computational cost than state-of-the-art.
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Submitted 30 April, 2017;
originally announced May 2017.
