Visualizing Field-free Deterministic Magnetic Switching of all-van der Waals Spin-Orbit Torque System Using Spin Ensembles in Hexagonal Boron Nitride
Authors:
Xi Zhang,
Jingcheng Zhou,
Chaowei Hu,
Kuangyin Deng,
Chuangtang Wang,
Nishkarsh Agarwal,
Hanshang Jin,
Faris A. Al-Matouq,
Stelo Xu,
Roshan S. Trivedi,
Senlei Li,
Sumedh Rathi,
Hanyi Lu,
Zhigang Jiang,
Valentin Taufour,
Robert Hovden,
Liuyan Zhao,
Ran Cheng,
Xiaodong Xu,
Jiun-Haw Chu,
Chunhui Rita Du,
Hailong Wang
Abstract:
Recently, optically active spin defects embedded in van der Waals (vdW) crystals have emerged as a transformative quantum sensing platform to explore cutting-edge materials science and quantum physics. Taking advantage of excellent solid-state integrability, this new class of spin defects can be arranged in controllable nanoscale proximity of target materials in vdW heterostructures, showing great…
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Recently, optically active spin defects embedded in van der Waals (vdW) crystals have emerged as a transformative quantum sensing platform to explore cutting-edge materials science and quantum physics. Taking advantage of excellent solid-state integrability, this new class of spin defects can be arranged in controllable nanoscale proximity of target materials in vdW heterostructures, showing great promise for improving spatial resolution and field sensitivity of current sensing technologies. Building on this state-of-the-art measurement platform, here we report hexagonal boron nitride-based quantum imaging of field-free deterministic magnetic switching of room-temperature two-dimensional magnet Fe3GaTe2 in an all-vdW spin-orbit torque (SOT) system. By visualizing SOT-driven variations of nanoscale Fe3GaTe2 magnetic stray field profile under different conditions, we have revealed how the observed magnetic switching evolves from deterministic to indeterministic behavior due to the interplay between out-of-plane spins, in-plane spins and Joule heating. This understanding, which is otherwise difficult to access by conventional transport measurements, offers valuable insights on material design, testing, and evaluation of next-generation vdW spintronic devices.
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Submitted 6 February, 2025;
originally announced February 2025.
Sensing Spin Wave Excitations by Spin Defects in Few-Layer Thick Hexagonal Boron Nitride
Authors:
Jingcheng Zhou,
Hanyi Lu,
Di Chen,
Mengqi Huang,
Gerald Q. Yan,
Faris Al-matouq,
Jiu Chang,
Dziga Djugba,
Zhigang Jiang,
Hailong Wang,
Chunhui Rita Du
Abstract:
Optically active spin defects in wide band-gap semiconductors serve as a local sensor of multiple degrees of freedom in a variety of "hard" and "soft" condensed matter systems. Taking advantage of the recent progress on quantum sensing using van der Waals (vdW) quantum materials, here we report direct measurements of spin waves excited in magnetic insulator Y3Fe5O12 (YIG) by boron vacancy $V_B^-$…
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Optically active spin defects in wide band-gap semiconductors serve as a local sensor of multiple degrees of freedom in a variety of "hard" and "soft" condensed matter systems. Taking advantage of the recent progress on quantum sensing using van der Waals (vdW) quantum materials, here we report direct measurements of spin waves excited in magnetic insulator Y3Fe5O12 (YIG) by boron vacancy $V_B^-$ spin defects contained in few-layer thick hexagonal boron nitride nanoflakes. We show that the ferromagnetic resonance and parametric spin excitations can be effectively detected by $V_B^-$ spin defects under various experimental conditions through optically detected magnetic resonance measurements. The off-resonant dipole interaction between YIG magnons and $V_B^-$ spin defects is mediated by multi-magnon scattering processes, which may find relevant applications in a range of emerging quantum sensing, computing, and metrology technologies. Our results also highlight the opportunities offered by quantum spin defects in layered two-dimensional vdW materials for investigating local spin dynamic behaviors in magnetic solid-state matters.
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Submitted 1 May, 2024;
originally announced May 2024.
