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Anomalous Random Telegraphy Signal in Suspended Graphene with Oxygen Adsorption
Authors:
Alexandro de Moraes Nogueira,
Afsal Kareekunnan,
Masashi Akabori,
Hiroshi Mizuta,
Manoharan Muruganathan
Abstract:
Graphene is a promising material for sensing applications because of its large specific surface area and low noise. In many applications, graphene will inevitably be in contact with oxygen since it is the second most abundant gas in the atmosphere. Therefore, it is of interest to understand how this gas affects the sensor properties. In this work, the effect of oxygen on the low-frequency noise of…
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Graphene is a promising material for sensing applications because of its large specific surface area and low noise. In many applications, graphene will inevitably be in contact with oxygen since it is the second most abundant gas in the atmosphere. Therefore, it is of interest to understand how this gas affects the sensor properties. In this work, the effect of oxygen on the low-frequency noise of suspended graphene is demonstrated. Devices with suspended graphene nanoribbons with a width (W) and length (L) of 200 nm were fabricated. The resistance as a function of time was measured in a vacuum and pure oxygen atmosphere through an ac lock-in method. After signal processing with wavelet denoising and analysis, it is demonstrated that oxygen causes random telegraphy signal (RTS) in the millisecond scale, with an average dwell time of 2.9 milliseconds in the high-resistance state, and 2 milliseconds in the low-resistance state. It is also shown that this RTS occurs only at some periods, which indicates that, upon adsorption, the molecules take some time until they find the most energetically favorable adsorption state. Also, a slow-down in the RTS time constants is observed, which infers that less active sites are available as time goes on because of oxygen adsorption. Therefore, it is very important to consider these effects to guarantee high sensitivity and high durability for graphene-based sensors that will be exposed to oxygen during their lifetime.
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Submitted 31 May, 2023; v1 submitted 2 March, 2023;
originally announced March 2023.
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Berry curvature induced valley Hall effect in non-encapsulated hBN/Bilayer graphene heterostructure aligned with near-zero twist angle
Authors:
Teppei Shintaku,
Afsal Kareekunnan,
Masashi Akabori,
Kenji Watanabe,
Takashi Taniguchi,
Hiroshi Mizuta
Abstract:
Valley Hall effect has been observed in asymmetric single-layer and bilayer graphene systems. In single-layer graphene systems, asymmetry is introduced by aligning graphene with hexagonal boron nitride (hBN) with a near-zero twist angle, breaking the sub-lattice symmetry. Although a similar approach has been used in bilayer graphene to break the layer symmetry and thereby observe the valley Hall e…
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Valley Hall effect has been observed in asymmetric single-layer and bilayer graphene systems. In single-layer graphene systems, asymmetry is introduced by aligning graphene with hexagonal boron nitride (hBN) with a near-zero twist angle, breaking the sub-lattice symmetry. Although a similar approach has been used in bilayer graphene to break the layer symmetry and thereby observe the valley Hall effect, the bilayer graphene was sandwiched with hBN on both sides in those studies. This study looks at a much simpler, non-encapsulated structure where hBN is present only at the top of graphene. The crystallographic axes of both hBN and bilayer graphene are aligned. A clear signature of the valley Hall effect through non-local resistance measurement ($R_{\rm{NL}}$) was observed. The observed non-local resistance could be manipulated by applying a displacement field across the heterostructure. Furthermore, the electronic band structure and Berry curvature calculations validate the experimental observations.
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Submitted 11 May, 2023; v1 submitted 5 January, 2023;
originally announced January 2023.
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Spin-orbit coupling and phase-coherence in InAs nanowires
Authors:
S. Estévez Hernández,
M. Akabori,
K. Sladek,
Ch. Volk,
S. Alagha,
H. Hardtdegen,
N. Demarina,
D. Grützmacher,
Th. Schäpers,
M. G. Pala
Abstract:
We investigated the magnetotransport of InAs nanowires grown by selective area metal-organic vapor phase epitaxy. In the temperature range between 0.5 and 30 K reproducible fluctuations in the conductance upon variation of the magnetic field or the back-gate voltage are observed, which are attributed to electron interference effects in small disordered conductors. From the correlation field of the…
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We investigated the magnetotransport of InAs nanowires grown by selective area metal-organic vapor phase epitaxy. In the temperature range between 0.5 and 30 K reproducible fluctuations in the conductance upon variation of the magnetic field or the back-gate voltage are observed, which are attributed to electron interference effects in small disordered conductors. From the correlation field of the magnetoconductance fluctuations the phase-coherence length l_phi is determined. At the lowest temperatures l_phi is found to be at least 300 nm, while for temperatures exceeding 2 K a monotonous decrease of l_phi with temperature is observed. A direct observation of the weak antilocalization effect indicating the presence of spin-orbit coupling is masked by the strong magnetoconductance fluctuations. However, by averaging the magnetoconductance over a range of gate voltages a clear peak in the magnetoconductance due to the weak antilocalization effect was resolved. By comparison of the experimental data to simulations based on a recursive two-dimensional Green's function approach a spin-orbit scattering length of approximately 70 nm was extracted, indicating the presence of strong spin-orbit coupling.
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Submitted 6 November, 2010;
originally announced November 2010.
