Showing 1–7 of 7 results for author: A., J M

Hafnia-based Phase-Change Ferroelectric Steep-Switching FETs on a 2-D MoS$_2$ platform

Authors: Sooraj Sanjay, Jalaja M. A, Navakanta Bhat, Pavan Nukala

Abstract: Ferroelectric field-effect transistors integrated on 2D semiconducting platforms are extremely relevant for low power electronics. Here, we propose and demonstrate a novel phase-change ferroelectric field effect transistor (PCFE-FET) for steep switching applications. Our gate stack is engineered as a ferroelectric Lanthanum doped hafnium oxide (LHO) proximity coupled with Mott insulator Ti$_x$O… ▽ More Ferroelectric field-effect transistors integrated on 2D semiconducting platforms are extremely relevant for low power electronics. Here, we propose and demonstrate a novel phase-change ferroelectric field effect transistor (PCFE-FET) for steep switching applications. Our gate stack is engineered as a ferroelectric Lanthanum doped hafnium oxide (LHO) proximity coupled with Mott insulator Ti$_x$O$_{2x-1}$(N$_y$) and is integrated onto a 2D MoS$_2$ channel. The interplay of partial polarization switching in the ferroelectric LHO layer and reversible field-tunable metal-insulator transition (MIT) in Ti$_x$O$_{2x-1}$(N$_y$) layer concomitantly triggers polar to non-polar phase transition in the LHO layer between 200 and 220 K. This results in distinctive step-like features in the channel current during DC measurements, and random current fluctuations in high-speed measurements with slim anticlockwise hysteresis. Our devices show subthreshold slopes as steep as 25 mV/dec at 210 K, breaking the Boltzmann limit. Our gate stack is also potentially tunable for operation at temperatures of interest, presenting innovative gate stack engineering approaches for low-power computing solutions. △ Less

Submitted 4 November, 2024; originally announced November 2024.

Record cryogenic cooling in ferroelectric hafnia proximity induced via Mott transition

Authors: Jalaja M A, Shubham Kumar Parate, Binoy Krishna De, Sai Dutt K, Pavan Nukala

Abstract: On-chip refrigeration at cryogenic temperatures is becoming an important requirement in the context of quantum technologies and nanoelectronics. Ferroic materials with enhanced electrocaloric effects at phase transitions are good material candidates for the same. By exploiting the Mott metal-insulator transition (MIT) of TiOx(Ny), the bottom electrode, we engineer a depolarization field controlled… ▽ More On-chip refrigeration at cryogenic temperatures is becoming an important requirement in the context of quantum technologies and nanoelectronics. Ferroic materials with enhanced electrocaloric effects at phase transitions are good material candidates for the same. By exploiting the Mott metal-insulator transition (MIT) of TiOx(Ny), the bottom electrode, we engineer a depolarization field controlled reversible polar to non-polar phase transition in thick La-doped hafnia (40 nm). This transition occurs between ~125 and 140 K and produces giant negative pyroelectric and electrocaloric effects. Refrigeration metrics were estimated between 120 to 200 K, with a peak refrigerant capacity of 25 kJ Kg-1 (2 kJ Kg-1), peak isothermal entropy ΔS~ 8 kJ Kg-1 K-1 (0.5 kJ Kg-1 K-1) and adiabatic ΔTcooling ~ 106 K (11 K) at ~140 K and 5 MV cm-1 (0.5 MV cm-1, and these are the largest reported in any electrocaloric system. Our work fundamentally proposes design guidelines to induce significant solid-state refrigeration through proximity effects, even at cryogenic temperatures relevant to quantum technologies. △ Less

Submitted 27 March, 2024; originally announced March 2024.

Enhancement in electromechanical properties of piezoelectric thin film through strain-induced domain alignment

Authors: Antony Jeyaseelan A, Sandip Bysakh, Jalaja M A, Soma Dutta

Abstract: This paper reports the impact of process-dependent structural deformation and lattice strain by doping, resulting in domain re-orientation along the a-axis. For this investigation, the smaller La3+ cation is introduced at A-site and the longitudinal and transverse piezocoefficient properties have been studied in Pb(Zr,Ti)O3 (PZT) film. Introducing smaller cations at the A-site leads to a reduction… ▽ More This paper reports the impact of process-dependent structural deformation and lattice strain by doping, resulting in domain re-orientation along the a-axis. For this investigation, the smaller La3+ cation is introduced at A-site and the longitudinal and transverse piezocoefficient properties have been studied in Pb(Zr,Ti)O3 (PZT) film. Introducing smaller cations at the A-site leads to a reduction in the lattice parameter and improves the lattice matching with the Pt substrate. The XRD and HRTEM studies evidence this occurrence in both films. The HRTEM analysis also reveals the 30° long-range ordered domain alignment due to the lattice mismatch and 0° match domain alignment with the substrate in PZT and PLZT films respectively. The strain-induced 30° domain alignment in PZT enhances the longitudinal (d33d), whereas 0° domain alignment in PLZT enhances the transverse (d31) piezocoefficient properties. Incorporating 8% of La in the PZT lattice leads to a two-fold increase in the d31 value compared to PZT film. △ Less

Submitted 12 December, 2023; originally announced December 2023.

Comments: 8 pages, 12 figures

MSC Class: NA

Active learning for structural reliability analysis with multiple limit state functions through variance-enhanced PC-Kriging surrogate models

Authors: J. Moran A., P. G. Morato, P. Rigo

Abstract: Existing active strategies for training surrogate models yield accurate structural reliability estimates by aiming at design space regions in the vicinity of a specified limit state function. In many practical engineering applications, various damage conditions, e.g. repair, failure, should be probabilistically characterized, thus demanding the estimation of multiple performance functions. In this… ▽ More Existing active strategies for training surrogate models yield accurate structural reliability estimates by aiming at design space regions in the vicinity of a specified limit state function. In many practical engineering applications, various damage conditions, e.g. repair, failure, should be probabilistically characterized, thus demanding the estimation of multiple performance functions. In this work, we investigate the capability of active learning approaches for efficiently selecting training samples under a limited computational budget while still preserving the accuracy associated with multiple surrogated limit states. Specifically, PC-Kriging-based surrogate models are actively trained considering a variance correction derived from leave-one-out cross-validation error information, whereas the sequential learning scheme relies on U-function-derived metrics. The proposed active learning approaches are tested in a highly nonlinear structural reliability setting, whereas in a more practical application, failure and repair events are stochastically predicted in the aftermath of a ship collision against an offshore wind substructure. The results show that a balanced computational budget administration can be effectively achieved by successively targeting the specified multiple limit state functions within a unified active learning scheme. △ Less

Submitted 23 February, 2023; originally announced February 2023.

Semiclassical spin transport in LaO/STO system in the presence of multiple Rashba spin orbit couplings

Authors: Anirban Kundu, Zhuo Bin Siu, Jalil Mansoor B. A

Abstract: The interaction between the linear and cubic spin-orbit coupling with magnetic moments and mobile spin-polarized carriers in the LaO/STO system provides new avenues for spin transport applications. We study the interplay between linear and cubic Rashba spin orbit coupling (RSOC) on in-plane magnetic moments in the LaO/STO system using the Boltzmann transport theory based on the relaxation time app… ▽ More The interaction between the linear and cubic spin-orbit coupling with magnetic moments and mobile spin-polarized carriers in the LaO/STO system provides new avenues for spin transport applications. We study the interplay between linear and cubic Rashba spin orbit coupling (RSOC) on in-plane magnetic moments in the LaO/STO system using the Boltzmann transport theory based on the relaxation time approximation (RTA) and the more refined Schliemann-Loss (SL) delta-potential scattering model. In general, both methods yield a linear (quadratic) relationship between the spin accumulation (spin current) when one of the three RSOC strengths is varied and the other two fixed. The simultaneous presence of multiple types of RSOC with distinct angular dependences is a key ingredient in breaking the k-space symmetry of the Fermi surface, thus ensuring a finite spin accumulation upon integration over the entire Fermi surface. While the oft-used RTA method is sufficiently accurate for spin accumulation calculations, the more refined SL model is required for spin current calculations because the RTA method neglects the anisotropy of the Fermi contour arising from the cubic RSOC terms. Based on the refined SL model and under optimal tuning of the RSOC parameters, the spin charge conversion values in LaO/STO is predicted to reach a remarkable efficiency of 30. △ Less

Submitted 6 September, 2022; originally announced September 2022.

5PEN TECHNOLOGY: A New Dawn in Homogeneous and Heterogeneous Computing

Authors: Osagie Scale Uwadia Maxwell, K. O. Obahiagbon, Osagie Joy Amenze, John-Otumu M. A

Abstract: This research work is a pair review into the conceptual frame work and innovation into Pen-style Personal Network Gadget Package (P-ISM) as inevitable tool to easy, fast and convenient access to the internet. Computing activities have increased the degree of people using personal computers (PCs), complicated packages and all form of social media applications (Apps.) have emerged within this short… ▽ More This research work is a pair review into the conceptual frame work and innovation into Pen-style Personal Network Gadget Package (P-ISM) as inevitable tool to easy, fast and convenient access to the internet. Computing activities have increased the degree of people using personal computers (PCs), complicated packages and all form of social media applications (Apps.) have emerged within this short period. Meeting these trends (day to day activities) in more convenient form has led to the modern sophisticated garget such as Pen-Style Network Gadget Package (P-ISM) prototype. The growth in internet affects our lives in much better way than we know and its sustainability made 5 pen technology innovations a salt after. △ Less

Submitted 5 April, 2018; originally announced April 2018.

Solving differential and integral equations with Tau method

Authors: de Matos, João Carrilho, Matos, José M. A., Rodrigues, Maria João

Abstract: In this work we present a new approach for the implementation of operational Tau method for the solutions of linear differential and integral equations. In our approach we use the three terms relation of an orthogonal polynomial basis to compute the operational matrices. We also give numerical applications of operational matrices to solve differential and integral problems using the operational Ta… ▽ More In this work we present a new approach for the implementation of operational Tau method for the solutions of linear differential and integral equations. In our approach we use the three terms relation of an orthogonal polynomial basis to compute the operational matrices. We also give numerical applications of operational matrices to solve differential and integral problems using the operational Tau method. △ Less

Submitted 20 December, 2017; originally announced December 2017.