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Two-gap superconductivity in the noncentrosymmetric La$_3$Se$_4$ compound
Authors:
F. Košuth,
N. Potomová,
Z. Pribulová,
J. Kačmarčík,
M. Naskar,
D. S. Inosov,
S. Ash,
A. K. Ganguli,
J. Šoltýs,
V. Cambel,
P. Szabó,
P. Samuely
Abstract:
Point-contact Andreev reflection spectroscopy at low temperatures and high magnetic fields has been performed on a noncentrosymmetric La$_3$Se$_4$ superconductor with a critical temperature $T_c$ = 8 K. Two superconducting energy gaps $Δ_1$ and $Δ_2$ with $2Δ_{1}/k_{B} T_{c}$ ~ 5.8 and $2Δ_{2}/k_{B} T_{c}$ ~ 2.3, are directly observed in some of the spectra. The temperature and magnetic field effe…
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Point-contact Andreev reflection spectroscopy at low temperatures and high magnetic fields has been performed on a noncentrosymmetric La$_3$Se$_4$ superconductor with a critical temperature $T_c$ = 8 K. Two superconducting energy gaps $Δ_1$ and $Δ_2$ with $2Δ_{1}/k_{B} T_{c}$ ~ 5.8 and $2Δ_{2}/k_{B} T_{c}$ ~ 2.3, are directly observed in some of the spectra. The temperature and magnetic field effects help to resolve a two-gap structure even on the most frequent spectra where at low temperatures only a single gap is apparent, reflected in a pair of maxima around the zero bias. Two-gap superconductivity consistently with the point contact Andreev reflection spectroscopy is also supported by the heat capacity and the Hall probe magnetization measurements.
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Submitted 25 November, 2024;
originally announced November 2024.
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Skyrmion formation in nanodiscs using magnetic force microscopy tip
Authors:
Iu. V. Vetrova,
J. Soltys,
M. Zelent,
V. A. Gubanov,
A. V. Sadovnikov,
T. Šcepka,
J. Dérer,
V. Cambel,
M. Mruczkiewicz
Abstract:
In this manuscript we demonstrate the skyrmion formation in ultrathin nanodots using magnetic force microscopy tip. Submicron-size dots based on Pt/Co/Au multilayers hosting interfacial Dzyaloshiskii-Morya interaction were used in the experiments. We have found that the tip field generated by the magnetic tip significantly affects the magnetization state of the nanodots and leads to the formation…
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In this manuscript we demonstrate the skyrmion formation in ultrathin nanodots using magnetic force microscopy tip. Submicron-size dots based on Pt/Co/Au multilayers hosting interfacial Dzyaloshiskii-Morya interaction were used in the experiments. We have found that the tip field generated by the magnetic tip significantly affects the magnetization state of the nanodots and leads to the formation of skyrmions. Micromagnetic simulations explain the evolution of the magnetic state during magnetic force microscopy scans and confirm the possibility of the skyrmion formation. The key transition in this process is the formation of the horseshoe magnetic domain. We have found that formation of skyrmion by the magnetic probe is a reliable and repetitive procedure. Our findings provide a simple solution for skyrmions formation in nanodots.
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Submitted 26 February, 2020;
originally announced February 2020.
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Magnetic and thermodynamic properties of Cu$_x$TiSe$_2$ single crystals
Authors:
Z. Pribulová,
Z. Medvecká,
J. Kačmarčík,
V. Komanický,
T. Klein,
P. Rodière,
F. Levy-Bertrand,
B. Michon,
C. Marcenat,
P. Husaníková,
V. Cambel,
J. Šoltýs,
G. Karapetrov,
S. Borisenko,
D. Evtushinsky,
H. Berger,
P. Samuely
Abstract:
We present a detailed study of the phase diagram of copper intercalated TiSe$_2$ single crystals, combining local Hall-probe magnetometry, tunnel diode oscillator technique (TDO), specific-heat, and angle-resolved photoemission spectroscopy measurements. A series of the Cu$_x$TiSe$_2$ samples from three different sources with various copper content $x$ and superconducting critical temperatures…
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We present a detailed study of the phase diagram of copper intercalated TiSe$_2$ single crystals, combining local Hall-probe magnetometry, tunnel diode oscillator technique (TDO), specific-heat, and angle-resolved photoemission spectroscopy measurements. A series of the Cu$_x$TiSe$_2$ samples from three different sources with various copper content $x$ and superconducting critical temperatures $T_c$ have been investigated. We first show that the vortex penetration mechanism is dominated by geometrical barriers enabling a precise determination of the lower critical field, $H_{c1}$. We then show that the temperature dependence of the superfluid density deduced from magnetic measurements (both $H_{c1}$ and TDO techniques) clearly suggests the existence of a small energy gap in the system, with a coupling strength $2Δ_s \sim [2.4-2.8]k_BT_c$, regardless of the copper content, in puzzling contradiction with specific heat measurements which can be well described by one single large gap $2Δ_l \sim [3.7-3.9]k_BT_c$. Finally, our measurements reveal a non-trivial doping dependence of the condensation energy, which remains to be understood.
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Submitted 5 June, 2017; v1 submitted 27 April, 2017;
originally announced April 2017.
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Single gap superconductivity in beta-Bi2Pd
Authors:
J. Kačmarčík,
Z. Pribulová,
T. Samuely,
P. Szabó,
V. Cambel,
J. Šoltýs,
E. Herrera,
H. Suderow,
A. Correa-Orellana,
D. Prabhakaran,
P. Samuely
Abstract:
beta-Bi2Pd compound has been proposed as another example of a multi-gap superconductor [Y. Imai et al., J. Phys. Soc. Jap. 81, 113708 (2012)]. Here, we report on measurements of several important physical quantities capable to show a presence of multiple energy gaps on our superconducting single crystals of beta-Bi2Pd with the critical temperature Tc close to 5 K. The calorimetric study via a sens…
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beta-Bi2Pd compound has been proposed as another example of a multi-gap superconductor [Y. Imai et al., J. Phys. Soc. Jap. 81, 113708 (2012)]. Here, we report on measurements of several important physical quantities capable to show a presence of multiple energy gaps on our superconducting single crystals of beta-Bi2Pd with the critical temperature Tc close to 5 K. The calorimetric study via a sensitive ac technique shows a sharp anomaly at the superconducting transition, however only a single energy gap is detected. Also other characteristics inferred from calorimetric measurements as the field dependence of the Sommerfeld coefficient and the temperature and angular dependence of the upper critical magnetic field point unequivocally to standard single s-wave gap superconductivity. The Hall-probe magnetometry provides the same result from the analysis of the temperature dependence of the lower critical field. A single-gapped BCS density of states is detected by the scanning tunneling spectroscopy measurements. Then, the bulk as well as the surface sensitive probes evidence a standard conventional superconductivity in this system where the topologically protected surface states have been recently detected by ARPES [M. Sakano et al., Nature Comm. 6, 8595 (2015)] .
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Submitted 8 March, 2016;
originally announced March 2016.
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Magnetization Properties and Vortex Phase Diagram in CuxTiSe2 Single Crystals
Authors:
P. Husanikova,
J. Fedor,
J. Derer,
J. Soltys,
V. Cambel,
M. Iavarone,
S. J. May,
G. Karapetrov
Abstract:
We have investigated the magnetization properties and flux dynamics of superconducting Cu$_x$TiSe$_2$ single crystals within wide range of copper concentrations. We find that the superconducting anisotropy is low and independent on copper concentration ($γ\sim1.7$), except in the case of strongly underdoped samples ($x\leq0.06$) that show a gradual increase in anisotropy to $γ\sim1.9$. The vortex…
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We have investigated the magnetization properties and flux dynamics of superconducting Cu$_x$TiSe$_2$ single crystals within wide range of copper concentrations. We find that the superconducting anisotropy is low and independent on copper concentration ($γ\sim1.7$), except in the case of strongly underdoped samples ($x\leq0.06$) that show a gradual increase in anisotropy to $γ\sim1.9$. The vortex phase diagram in this material is characterized by broad region of vortex liquid phase that is unusual for such low-$T_c$ superconductor with low anisotropy. Below the irreversibility line the vortex solid state supports relatively low critical current densities as compared to the depairing current limit ($J_c/J_0\sim10^{-7}$). All this points out that local fluctuations in copper concentration have little effect on bulk pinning properties in this system.
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Submitted 6 October, 2013;
originally announced October 2013.
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An influence of parallel electric field on the dispersion relation of graphene - a new route to Dirac logics
Authors:
Stanisław Krukowski,
Jakub Sołtys,
Jolanta Borysiuk,
Jacek Piechota
Abstract:
Ab initio density functional theory (DFT) simulations were used to investigate an influence of electric field, parallel to single and multilayer graphene on its electron dispersion relations close to K point. It was shown that for both single layer and AAAA stacking multilayer graphene under influence of parallel field the dispersion relations transform to nonlinear. The effect, associated with th…
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Ab initio density functional theory (DFT) simulations were used to investigate an influence of electric field, parallel to single and multilayer graphene on its electron dispersion relations close to K point. It was shown that for both single layer and AAAA stacking multilayer graphene under influence of parallel field the dispersion relations transform to nonlinear. The effect, associated with the hexagonal symmetry breaking, opens new route to high speed transistors and logical devices working in Dirac regime. The implementation of such device is presented.
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Submitted 18 September, 2012;
originally announced September 2012.
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Role of structure of C-terminated 4H-SiC(000) surface in growth of graphene layers - transmission electron microscopy and density functional theory studies
Authors:
Jolanta Borysiuk,
Jakub Sołtys,
Rafal Bożek,
Jacek Piechota,
Stanislaw Krukowski,
Wlodzimierz Strupinski,
Jacek M. Baranowski,
Roman Stepniewski
Abstract:
Principal structural defects in graphene layers, synthesized on a carbon-terminated face, i.e. the SiC(000) face of a 4H-SiC substrate, are investigated using microscopic methods. Results of high-resolution transmission electron microscopy (HRTEM) reveal their atomic arrangement. Mechanism of such defects creation, directly related to the underlying crystallographic structure of the SiC substrate,…
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Principal structural defects in graphene layers, synthesized on a carbon-terminated face, i.e. the SiC(000) face of a 4H-SiC substrate, are investigated using microscopic methods. Results of high-resolution transmission electron microscopy (HRTEM) reveal their atomic arrangement. Mechanism of such defects creation, directly related to the underlying crystallographic structure of the SiC substrate, is elucidated. The connection between the 4H-SiC(000) surface morphology, including the presence of the single atomic steps, the sequences of atomic steps, and also the macrosteps, and the corresponding emergence of planar defective structure (discontinuities of carbon layers and wrinkles) is revealed. It is shown that disappearance of the multistep island leads to the creation of wrinkles in the graphene layers. The density functional theory (DFT) calculation results show that the diffusion of both silicon and carbon atoms is possible on a Si-terminated SiC surface at a high temperature close to 1600°C. The creation of buffer layer at the Si-terminated surface effectively blocks horizontal diffusion, preventing growth of thick graphene layer at this face. At the carbon terminated SiC surface, the buffer layer is absent leaving space for effective horizontal diffusion of both silicon and carbon atoms. DFT results show that excess carbon atoms converts a topmost carbon layer to sp2 bonded configuration, liberating Si atoms in barrierless process. The silicon atoms escape through the channels created at the bending layers defects, while the carbon atoms are incorporated into the growing graphene layers. These results explain growth of thick graphene underneath existing graphene cover and also the creation of the principal defects at the C-terminated SiC(0001) surface
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Submitted 30 September, 2011;
originally announced September 2011.
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Stacking Sequence Dependence of Graphene Layers on SiC(000-1) - Experimental and Theoretical Investigation
Authors:
Jolanta Borysiuk,
Jakub Sołtys,
Jacek Piechota
Abstract:
Different stacking sequences of graphene are investigated using a combination of experimental and theoretical methods. The high-resolution transmission electron microscopy (HRTEM) of the stacking sequence of several layers of graphene, formed on the C-terminated 4H-SiC(0001) surface, was used to determine the stacking sequence and the interlayer distances. These data prove that the three metastabl…
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Different stacking sequences of graphene are investigated using a combination of experimental and theoretical methods. The high-resolution transmission electron microscopy (HRTEM) of the stacking sequence of several layers of graphene, formed on the C-terminated 4H-SiC(0001) surface, was used to determine the stacking sequence and the interlayer distances. These data prove that the three metastable configurations exist: ABAB, AAAA, ABCA. In accordance to these, findings those three cases were considered theoretically, using Density Functional Theory calculations comparing graphene sheets, freestanding and positioned on the SiC(0001) substrate. The total energies were calculated, the most stable structure was identified and the electronic band structure was obtained. The four graphene layer electron band structure depends crucially on the stacking: for the ABAB and ABCA stacking, the bands, close to the K point, are characterized by the hyperbolic dispersion relation while the AA stacking the dispersion in this region is linear, similar to that of a single graphene layer. It was also shown that the linear dispersion relation is preserved in the presence of the SiC substrate, and also for different distances between adjacent carbon layers.
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Submitted 28 June, 2010; v1 submitted 5 June, 2010;
originally announced June 2010.
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Density functional theory study of quasi-free-standing graphene layer on 4H-SiC(0001) surface decoupled by hydrogen atoms
Authors:
Jakub Soltys,
Jacek Piechota,
Michal Lopuszynski,
Stanislaw Krukowski
Abstract:
Epitaxial graphene, grown on SiC(0001) surface, has been widely studied both experimentally and theoretically. It was found that first epitaxial graphene layer in such structures is a buffer layer i.e. there are no characteristic Dirac cones in the band structure associated with it. However, C. Riedl et al. (Phys. Rev. Lett. 103, 246804 (2009)) in their experimental work observed recently that h…
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Epitaxial graphene, grown on SiC(0001) surface, has been widely studied both experimentally and theoretically. It was found that first epitaxial graphene layer in such structures is a buffer layer i.e. there are no characteristic Dirac cones in the band structure associated with it. However, C. Riedl et al. (Phys. Rev. Lett. 103, 246804 (2009)) in their experimental work observed recently that hydrogen intercalation of SiC-graphene samples can recover electronic properties typical to selfstanding graphene. The possible scenarios of hydrogen intercalation inducing graphene layer decoupling, including both the hydrogen penetration paths and energetically stable positions of hydrogen atoms, were modeled in ab initio DFT calculations. From the obtained results it follows that, due to intercalation, the graphene layer moves away to achieve about 3.9 A distance from the SiC surface. Electronic band structure, calculated for such quasi free standing graphene, exhibits Dirac-cone behavior which is in agreement with ARPES measurements.
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Submitted 25 March, 2010; v1 submitted 25 February, 2010;
originally announced February 2010.
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A comparative DFT study of electronic properties of 2H-, 4H- and 6H-SiC(0001) and SiC(000-1) clean surfaces: Significance of the surface Stark effect
Authors:
Jakub Soltys,
Jacek Piechota,
Michal Lopuszynski,
Stanislaw Krukowski
Abstract:
Electric field, uniform within the slab, emerging due to Fermi level pinning at its both sides is analyzed using DFT simulations of the SiC surface slabs of different thickness. It is shown that for thicker slab the field is nonuniform and this fact is related to the surface state charge. Using the electron density and potential profiles it is proved that for high precision simulations it is nec…
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Electric field, uniform within the slab, emerging due to Fermi level pinning at its both sides is analyzed using DFT simulations of the SiC surface slabs of different thickness. It is shown that for thicker slab the field is nonuniform and this fact is related to the surface state charge. Using the electron density and potential profiles it is proved that for high precision simulations it is necessary to take into account enough number of the Si-C layers. We show that using 12 diatomic layers leads to satisfactory results. It is also demonstrated that the change of the opposite side slab termination, both by different type of atoms or by their location, can be used to adjust electric field within the slab, creating a tool for simulation of surface properties, depending on the doping in the bulk of semiconductor. Using these simulations it was found that, depending on the electric field, the energy of the surface states changes in a different way than energy of the bulk states. This criterion can be used to distinguish Shockley and Tamm surface states. The electronic properties, i.e. energy and type of surface states of the three clean surfaces: 2H-, 4H-, 6H-SiC(0001), and SiC($000 \bar{1}$) are analyzed and compared using field dependent DFT simulations.
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Submitted 30 November, 2009; v1 submitted 24 July, 2009;
originally announced July 2009.
