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Condensed Matter > Materials Science

arXiv:1107.0085 (cond-mat)
[Submitted on 30 Jun 2011]

Title:Three-Fold Diffraction Symmetry in Epitaxial Graphene and the SiC Substrate

Authors:David A. Siegel, Shuyun Zhou, Farid El Gabaly, Andreas K. Schmid, Kevin F. McCarty, Alessandra Lanzara
View a PDF of the paper titled Three-Fold Diffraction Symmetry in Epitaxial Graphene and the SiC Substrate, by David A. Siegel and 5 other authors
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Abstract:The crystallographic symmetries and spatial distribution of stacking domains in graphene films on SiC have been studied by low energy electron diffraction (LEED) and dark field imaging in a low energy electron microscope (LEEM). We find that the graphene diffraction spots from 2 and 3 atomic layers of graphene have 3-fold symmetry consistent with AB (Bernal) stacking of the layers. On the contrary, graphene diffraction spots from the buffer layer and monolayer graphene have apparent 6-fold symmetry, although the 3-fold nature of the satellite spots indicates a more complex periodicity in the graphene sheets.
Comments: An addendum has been added for the arXiv version only, including one figure with five panels. Published paper can be found at this http URL
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1107.0085 [cond-mat.mtrl-sci]
  (or arXiv:1107.0085v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1107.0085
arXiv-issued DOI via DataCite
Journal reference: Phys. Rev. B 80, 241407(R) (2009)
Related DOI: https://doi.org/10.1103/PhysRevB.80.241407
DOI(s) linking to related resources

Submission history

From: David Siegel [view email]
[v1] Thu, 30 Jun 2011 23:24:00 UTC (2,052 KB)
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