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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1010.0972 (cond-mat)
[Submitted on 5 Oct 2010 (v1), last revised 13 Jul 2011 (this version, v2)]

Title:Single-shot measurement and tunnel-rate spectroscopy of a Si/SiGe few-electron quantum dot

Authors:Madhu Thalakulam, C. B. Simmons, B. J. Van Bael, B. M. Rosemeyer, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson
View a PDF of the paper titled Single-shot measurement and tunnel-rate spectroscopy of a Si/SiGe few-electron quantum dot, by Madhu Thalakulam and 8 other authors
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Abstract:We investigate the tunnel rates and energies of excited states of small numbers of electrons in a quantum dot fabricated in a Si/SiGe heterostructure. Tunnel rates for loading and unloading electrons are found to be strongly energy dependent, and they vary significantly between different excited states. We show that this phenomenon enables charge sensing measurements of the average electron occupation that are analogous to Coulomb diamonds. Excited-state energies can be read directly from the plot, and we develop a rate model that enables a quantitative understanding of the relative sizes of different electron tunnel rates.
Comments: 9 pages
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1010.0972 [cond-mat.mes-hall]
  (or arXiv:1010.0972v2 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1010.0972
arXiv-issued DOI via DataCite
Journal reference: Phys. Rev. B 84, 045307 (2011)
Related DOI: https://doi.org/10.1103/PhysRevB.84.045307
DOI(s) linking to related resources

Submission history

From: Mark Friesen [view email]
[v1] Tue, 5 Oct 2010 18:39:13 UTC (764 KB)
[v2] Wed, 13 Jul 2011 13:39:29 UTC (807 KB)
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