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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:0812.0403 (cond-mat)
[Submitted on 2 Dec 2008]

Title:Graphene magnetoresistance in a parallel magnetic field: Spin polarization effect

Authors:E. H. Hwang, S. Das Sarma
View a PDF of the paper titled Graphene magnetoresistance in a parallel magnetic field: Spin polarization effect, by E. H. Hwang and S. Das Sarma
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Abstract: We develop a theory for graphene magnetotransport in the presence of carrier spin polarization as induced, for example, by the application of an in-plane magnetic field ($B$) parallel to the 2D graphene layer. We predict a negative magnetoresistance $\sigma \propto B^2$ for intrinsic graphene, but for extrinsic graphene we find a non-monotonic magnetoresistance which is positive at lower magnetic fields (below the full spin-polarization) and negative at very high fields (above the full spin-polarization). The conductivity of the minority spin band $(-)$ electrons does not vanish as the minority carrier density ($n_-$) goes to zero. The residual conductivity of $(-)$ electrons at $n_- = 0$ is unique to graphene. We discuss experimental implications of our theory.
Comments: 5 pages, 3 figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:0812.0403 [cond-mat.mes-hall]
  (or arXiv:0812.0403v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.0812.0403
arXiv-issued DOI via DataCite
Journal reference: Phys. Rev. B 80, 075417 (2009)
Related DOI: https://doi.org/10.1103/PhysRevB.80.075417
DOI(s) linking to related resources

Submission history

From: E. H. Hwang [view email]
[v1] Tue, 2 Dec 2008 15:45:44 UTC (29 KB)
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